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Mobile space charge effect in 4H silicon carbide IMPATT diodes [2011-05-09] |
| Mobile space charge effect in 4H silicon carbide IMPATT diodes 来源出版物: PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 页: 268-272 出版年: 2007 作者: Mukhopadhyay S (Mukhopadhyay, S.)1, Banerjee S (Banerjee, Soumen), Mukhopadhyay J (Mukhopadhyay, J.), Banerjee JP (Banerjee, J. P.)1 附件下载 |
