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Analysis of Recombination Processes in 0.5–0.6 eV Epitaxial GaInAsSb Lattic [2010-01-28] |
| Analysis of Recombination Processes in 0.5–0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb 杂志：AIP Conference Proceedings 卷期：Volume 738738, pp. 320-328， 2004年 作者;D. Donetsky, S. Anikeev, N. Gu, G. Belenky, and S. Luryi,C. A. Wang and D. A. Shiau, M. Dashiell, J. Beausang, and G. Nichols 附件下载 |
