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Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using [2011-09-17] |
| Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy 作者: Liu Kuang-Wei; Chang Shoou-Jinn; Young Sheng-Joue; 等. 来源出版物: JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 158 期: 10 页: H983-H987 DOI: 10.1149/1.3615957 出版年: 2011 附件下载 |
