首 页 >> 单篇全文
A quantitative study of nitrogen content influence on the carrier mobility [2011-06-09] |
| 题目：A quantitative study of nitrogen content influence on the carrier mobility in GaNxAs1-x (0.008 < x < 0.022) 作者:Eshghi, H. ;Tehrani, F. S. 出处:Journal of Optoelectronics and Advanced Materials； Vol：11； Issue:10; Page:1467-1470 附件下载 |
