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HOLE TRAPS PRODUCED BY HIGH-TEMPERATURE HEAT-TREATMENTS OF SILICON ABOVE 13
[2012-11-23]
HOLE TRAPS PRODUCED BY HIGH-TEMPERATURE HEAT-TREATMENTS OF SILICON ABOVE 1300-DEGREES-C
作者: KAMIURA, Y (KAMIURA, Y); YONETA, M (YONETA, M); HASHIMOTO, F (HASHIMOTO, F)
来源出版物: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 卷: 120 期: 1 页: K11-K14 DOI: 10.1002/pssa.2211200129 出版年: JUL 16 1990
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