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4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer [2010-03-12] |
| 4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer Journal Materials Science Forum (Volumes 457 - 460) Volume Silicon Carbide and Related Materials 2003 Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet Pages 1109-1112 DOI 10.4028/www.scientific.net/MSF.457-460.1109 Online since June, 2004 Authors J. Wu, Leonid Fursin, Yu Zhu Li, Petre Alexandrov, Jian H. Zhao 附件下载 |
