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Fabrication of High Performance GaN-Based Vertical Light-Emitting Diodes Us [2009-08-14] |
| Fabrication of High Performance GaN-Based Vertical Light-Emitting Diodes Using a Transparent Conducting Indium Tin Oxide Channel Layer
ELECTROCHEMICAL AND SOLID STATE LETTERS 卷: 12 期: 9 页: H322-H324 出版年: 2009 附件下载 |
