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Time resolved photoluminescence of si-doped high Al mole fraction AlGaN epi [2011-09-13] |
| Time resolved photoluminescence of si-doped high Al mole fraction AlGaN epilayers grown by plasma-enhanced molecular beam epitaxy Source: GAN AND RELATED ALLOYS - 2003 Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume: 798 Pages: 667-672 Published: 2003 Y5.45 附件下载 |
