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Impact of the base doping concentration on the transport mechanisms in n-ty [2011-05-09] |
| Impact of the base doping concentration on the transport mechanisms in n-type a-SiGe:H/p-type c-Silicon Heterojunctions 来源出版物: REVISTA MEXICANA DE FISICA 卷: 57 期: 2 页: 133-139 出版年: APR 2011 作者: Rosales-Quintero P (Rosales-Quintero, P.)1, Moreno-Moreno M (Moreno-Moreno, M.)1, Torres-Jacome A (Torres-Jacome, A.)1, Wade FJD (De la Hidalga Wade, F. J.)1, Molina-Reyes J (Molina-Reyes, J.)1, Calleja-Arriaga W (Calleja-Arriaga, W.)1, Zuniga-Islas C (Zuniga-Islas, C.)1 附件下载 |
