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The influence of dislocations on optical and electrical properties of epita [2012-07-14] |
| 标题: The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer 作者: Liu W. -R.; Lin B. H.; Yang S.; 等. 来源出版物: CRYSTENGCOMM 卷: 14 期: 5 页: 1665-1671 DOI: 10.1039/c2ce06218f 出版年: 2012 附件下载 |
