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Control of the properties of wide bandgap a-SiC : H films prepared by RF PE [2009-12-08] |
| 标题: Control of the properties of wide bandgap a-SiC : H films prepared by RF PECVD method by varying methane flow rate 作者: Iftiquar, SM; Barua, AK 来源出版物: SOLAR ENERGY MATERIALS AND SOLAR CELLS 卷: 56 期: 2 页: 117-123 出版年: JAN 1 1999 附件下载 |
