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Ohmic Contact Resistance dependence on Temperature for GaN Devices
[2012-08-31]
Ohmic Contact Resistance dependence on Temperature for GaN Devices
Author(s): Perez-Tomas, A (Perez-Tomas, A.)1; Fontsere, A (Fontsere, A.)1; Placidi, M (Placidi, M.)1; Baron, N (Baron, N.); Chenot, S (Chenot, S.); Cordier, Y (Cordier, Y.); Moreno, JC (Moreno, J. C.); Gammon, PM (Gammon, P. M.); Jennings, MR (Jennings, M. R.)
Source: SILICON CARBIDE AND RELATED MATERIALS 2010 Book Series: Materials Science Forum Volume: 679-680 Pages: 816-819
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