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Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching [2011-10-25] |
| Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive Journal: Materials Science Forum (Volumes 679 - 680) Volume :Silicon Carbide and Related Materials 2010 Pages 290-293 附件下载 |
