首 页 >> 单篇全文
Deep N-well Induced Latch-up Challenges in Bulk FinFET Technology [2018-06-27] |
Deep N-well Induced Latch-up Challenges in Bulk FinFET Technology 作者: Huang, Chien-Yao; Su, Yu-Ti; Chang, Tzu-Heng; 等. 会议: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) 会议地点: Tucson, AZ 会议日期: SEP 10-14, 2017 会议赞助商: EOS ESD Assoc Inc; IEEE; Electron Devices Soc; Reiliabil Soc; EMC Soc 2017 39TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD) 丛书: Electrical Overstress Electrostatic Discharge Symposium 出版年: 2017
|