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Thermal stability of GaAs tunnel junctions using carbon as a p-type dopant [2010-09-01] |
| Thermal stability of GaAs tunnel junctions using carbon as a p-type dopant grown by metal-organic vapor phase epitaxy Solar Energy Materials and Solar Cells, Volume 50, Issues 1-4, January 1998, Pages 281-288 Shu Gotoh, Takashi Ueda, Hiroaki Kakinuma, Masahiro Akiyama 附件下载 |
