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Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon [2013-06-14] |
| Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films Materials Science Forum (Volumes 740 - 742) ，pp. 229-234 附件下载 |
