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Effects of ain buffer layer on crystallographic structure and on electrical
[2012-11-12]
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE Original Research Article
Journal of Crystal Growth, Volume 98, Issues 1–2, 1 November 1989, Pages 209-219
Isamu Akasaki, Hiroshi Amano, Yasuo Koide, Kazumasa Hiramatsu, Nobuhiko Sawaki

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