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Indium distribution and influence of internal fields in InGaN quantum wells
[2011-04-14]

Indium distribution and influence of internal fields in InGaN quantum wells
作者: Rossi, F.; Armani, N.; Ferrari, C., et al.
会议信息: Microscopy of Semiconducting Materials Conference, 日期: Cambridge UK
来源出版物: Microscopy of Semiconducting Materials Conference (Inst. of Phys. Conference Series No.180) 页: 277-80|xviii+686 出版年: 2004


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