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Advances in multi- and single-wafer SiC epitaxy for the production and [2009-09-23] |
Advances in multi- and single-wafer SiC epitaxy for the production and
development of power diodes
Hecht, C.; Thomas, B.; Stein, R.; Friedrichs, P.
Materials Science Forum 卷: 600-603 页: 95-8 出版年: 2009
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