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Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitax [2011-08-15] |
| 标题: Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitaxy 作者: Armitage Rob; Horita Masahiro; Kimoto Tsunenobu 编者: Kuball M; Myers TH; Redwing JM; 等. 会议名称: Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting 会议地点: Boston, MA 会议日期: NOV 28-DEC 02, 2005 来源出版物: GaN, AIN, InN and Related Materials 丛书: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 卷: 892 页: 705-710 出版年: 2006 |
