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Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped ph [2009-12-01] |
| 标题: Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190L 作者: Liao, YS; Lin, GR; Kuo, HC, et al. 会议信息: 3rd Conference on Semiconductor Photosetectores, 日期: JAN 25, 2006 San Jose CA 来源出版物: Semiconductor Photodetectors III 卷: 6119 页: L1190-L1190 出版年: 2006 文献编号: 61190L |
