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Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructur [2012-02-27] |
| Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko Science 24 February 2012: 947-950.Published online 2 February 2012 [DOI:10.1126/science.1218461] |
