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A study of grown-in impurities in silicon by deep-level transient spectrosc [2012-02-17] |
| A study of grown-in impurities in silicon by deep-level transient spectroscopy A. Rohatgi, J.R. Davis, R.H. Hopkins, P.G. McMullin Solid-State Electronics Volume 26, Issue 11, November 1983, Pages 1039–1051 附件下载 |
