首 页 >> 单篇全文
Improvement of life time of minority carriers in GaAs epi-layer grown on Ge
[2010-12-06]

Takahashi, Y.; Yamada, S.; Nakazono, R.; Minagawa, Y.; Matsuda, T.; Unno, T.; Kuma, S.,
Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate.

Solar Energy Materials and Solar Cells 1998, 50, 273-280.


附件下载