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Comparison of the Etch Mask Selectivity of Nickel and Copper for a Deep, Anisotropic Plasma Etching Process of Silicon Carbide (SiC) [2018-03-15] |
Comparison of the Etch Mask Selectivity of Nickel and Copper for a Deep, Anisotropic Plasma Etching Process of Silicon Carbide (SiC)
期: 2 页: P55-P59 DOI: 10.1149/2.0121802jss 出版年: 2018
1517541481.pdf |