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Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope
[2017-07-13]

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

  • 【作 者】Bae JH;Lee JH.

  • 【刊 名】J Nanosci Nanotechnol

  • 【出版日期】2016

  • 【卷 号】Vol.16

  • 【期 号】No.5

  • 【页 码】4919-4923



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