首 页 >> 单篇全文
Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by Capacitance-Voltage and Deep Level Transient Spectroscopy Methods
[2016-09-12]

Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by

Capacitance-Voltage and Deep Level Transient Spectroscopy Methods


Mater. Res. Soc. Symp. Proc. Vol. 1108  1108-A09-24




12122650247.pdf