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Heteroepitaxy of III-V Compound Semiconductors on Silicon for Logic Applications: Selective Area Epitaxy in Shallow Trench Isolation Structures vs. Direct Epitaxy mediated by Strain Relaxed Buffers 
[2016-06-22]

Heteroepitaxy of III-V Compound Semiconductors on Silicon for Logic

Applications: Selective Area Epitaxy in Shallow Trench Isolation Structures vs.

Direct Epitaxy mediated by Strain Relaxed Buffers




ECS Transactions, 50 (9) 349-355 (2012)



2291340175.pdf