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Heteroepitaxy of III-V Compound Semiconductors on Silicon for Logic Applications: Selective Area Epitaxy in Shallow Trench Isolation Structures vs. Direct Epitaxy mediated by Strain Relaxed Buffers [2016-06-22] |
Heteroepitaxy of III-V Compound Semiconductors on Silicon for Logic Applications: Selective Area Epitaxy in Shallow Trench Isolation Structures vs. Direct Epitaxy mediated by Strain Relaxed Buffers ECS Transactions, 50 (9) 349-355 (2012) 2291340175.pdf |