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Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors
[2015-11-17]

Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors

J. Nanoelectron. Optoelectron. 2006, Vol. 1, No. 2  p.258



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