Part I: Basic Physical and Chemical Properties

Fundamentals and the Future of Semiconductor Device Technology, M. Mastro

The Challenge of III–V Materials Integration with Si Microelectronics, T. Li

Part II: GaN and Related Alloys on Silicon Growth and Integration Techniques

III-Nitrides on Si Substrate, J. Li, J.Y. Lin, H. Jiang, and N. Sawaki

New Technology Approaches, A. Dadgar

Part III: III–V Materials and Device Integration Processes with Si Microelectronics

Group III-A Nitrides on Si: Stress and Microstructural Evolution, S. Raghavan and J.M. Redwing

Direct Growth of III–V Devices on Silicon, T. Kazior, K.J. Herrick, and J. LaRoche

Optoelectronic Device Integrated on Si, Di Liang and J.E. Bowers

Reliability of III–V Electronic Devices, A.A. Immorlica, Jr.

Part IV: Defect and Properties Evaluation and Characterization

In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems, R. Clos and A. Krost

X-Ray Characterization of Group III-Nitrides, A. Krost and J. Bläsing

Luminescence in GaN, F. Bertram

Part V: Device Structures and Properties

GaN-Based Optical Devices on Silicon, A. Dadgar

The Conventional III–V Materials and Devices on Silicon, E.Y. Chang

III–V Solar Cells on Silicon, S.A. Ringel and T.J. Grassman