索书号：623.4/M232

INTRODUCTION
Heterostructure Field-Effect Devices
Substrate Engineering
Gate Dielectrics on Engineered Substrates
Strained-Si Technology: Process Integration
Nonclassical CMOS Structures
Strain-Engineered Hetero-FETs: Modeling and Simulation

STRAIN ENGINEERING IN MICROELECTRONICS
Stress Induced during Manufacturing
Global vs. Local Strain
Substrate-Induced Strain
Process-Induced Stress
Stress/Strain Analysis

STRAIN-ENGINEERED SUBSTRATES
Epitaxy
Heteroepitaxy and Strain Control
Engineered Substrates: Technology
Characterization of Strained Layers
Engineered Substrates

ELECTRONIC PROPERTIES OF ENGINEERED SUBSTRATES
Substrate-Induced Strained-Si
Carrier Lifetime
Mobility: Thickness Dependence
Mobility: Temperature Dependence
Diffusion in Strained-Si
Process-Induced Strained-Si
Uniaxial vs. Biaxial Strain Engineering

GATE DIELECTRICS ON ENGINEERED SUBSTRATES
Strained-Si MOSFET Structures
Thermal Oxidation of Strained-Si
Rapid Thermal Oxidation
Plasma Nitridation of Strained-Si
Effect of Surface Roughness
Effect of Strained-Si Layer Thickness
High-k Gate Dielectrics on Strained-Si
Gate Dielectrics on Ge

HETEROSTRUCTURE SiGe/SiGeC MOSFETS
SiGe/SiGeC:Material Parameters
SiGe Hetero-FETs: Structures and Operation
SiGe p-MOSFETs on SOI
SiGeC Hetero-FETs
SiGe-Based HEMTs
Design Issues

STRAINED-Si HETEROSTRUCTURE MOSFETS
Operating Principle
Uniaxial Stress: Process Flow
Strained-Si MOSFETs with SiC-Stressor
Biaxial Strain: Process Flow
Scaling of Strained-Si MOSFETs
Strained-Si MOSFETs: Reliability
Industry Example: TSMC
Industry Example: AMD

MODELING AND SIMULATION OF HETERO-FETS
Simulation of Hetero-FETs
Modeling of Strained-SiMaterial Parameters
Simulation of Strained-Si n-MOSFETs
Characterization of Strained-Si Hetero-FETs
TCAD: Strain-Engineered Hetero-FETs
SPICE Parameter Extraction
Performance Assessment