ADVANCED HIGH SPEED DEVICES
edited by Michael S Shur (Rensselaer Polytechnic Institute, USA) & Paul Maki (US Office of Naval Research, USA)

索书号：TN303/S562

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.


Contents:
Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.)
Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.)
Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.)
The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.)
Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.)
GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.)
Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis)
and other papers