Chalcogenide Photovoltaics: Physics, Technologies, and Thin Film Devices

索书号 TN914.4/S315

Preface.
Symbols and Acronyms.

1 Introduction.

1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells.

1.2 History of CdTe Solar Cells.

1.3 Prospects of Chalcogenide Photovoltaics.

2 Thin Film Heterostructures.

2.1 Energies and Potentials.

2.2 Charge Densities and Fluxes.

2.3 Energy Band Diagrams.

2.4 Diode Currents.

2.5 Light Generated Currents.

2.6 Device Analysis and Parameters.

3 Design Rules for Heterostructure Solar Cells and Modules.

3.1 Absorber Bandgap.

3.2 Band Alignment.

3.3 Emitter Doping and Doping Ratio.

3.4 Fermi Level Pinning.

3.5 Absorber Doping.

3.6 Absorber Thickness.

3.7 Grain Boundaries.

3.8 Back Contact Barrier.

3.9 Buffer Thickness.

3.10 Front Surface Gradient.

3.11 Back Surface Gradients.

3.12 Monolithic Series Interconnection.

4 Thin Film Material Properties.

4.1 AII-BVI Absorbers.

4.2 AI-BIII-C2VI.

2 Absorbers.

4.3 Buffer Layers.

4.4 Window Layers.

4.5 Interfaces.

5 Thin Film Technology.

5.1 CdTe Cells and Modules.

5.2 Cu(In,Ga)(S,Se)2 Cells and Modules.

6 Photovoltaic Properties of Standard Devices.

6.1 CdTe Device Properties.

6.2 AI-BIII-C2VI.

2 Device Properties.

7 Appendix A: Frequently Observed Anomalies.

7.1 JV Curves.

7.2 Solar Cell Parameters.

7.3 Diode Parameters.

7.4 Quantum Efficiency.

7.5 Transient Effects.

8 Appendix B: Tables.

References.

Index.