| The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition
索书号：524.1/R278(2)
Introduction to Semiconductor Compounds
III–V semiconductor alloys
III–V semiconductor devices
Technology of multilayer growth
Growth Technology
Metalorganic chemical vapor deposition
New non-equilibrium growth techniques
In situ Characterization during MOCVD
Reflectance anisotropy and ellipsometry
Optimization of the growth of III–V binaries by RDS
RDS investigation of III–V lattice-matched heterojunctions
RDS investigation of III–V lattice-mismatched structures
Insights on the growth process
Ex situ Characterization Techniques
Chemical bevel revelation
Deep-level transient spectroscopy
X-ray diffraction
Photoluminescence
Electromechanical capacitance-voltage and photovoltage spectroscopy
Resistivity and Hall measurement
Thickness measurement
MOCVD Growth of GaAs Layers
GaAs and related compounds band structure
MOCVD growth mechanism of GaAs and related compounds
Experimental details
Incorporation of impurities in GaAs grown by MOCVD
Growth and Characterization of the GaInP–GaAs System
Growth details
Structural order in GaxIn1−xP alloys grown by MOCVD
Defects in GaInP layers grown by MOCVD
Doping behavior of GaInP
GaAs–GaInP heterostructures
Growth and characterization of GaInP–GaAs multilayers by MOCVD
Optical and structural investigations of GaAs–GaInP quantum wells and superlattices grown by MOCVD
Characterization of GaAs–GaInP quantum wells by auger analysis of chemical bevels
Evaluation of the band offsets of GaAs–GaInP multilayers by electroreflectance
Intersubband hole absorption in GaAs–GaInP quantum wells
Optical Devices
Electro-optical modulators
GaAs-based infrared photodetectors grown by MOCVD
Solar cells and GaAs solar cells
GaAs-Based Lasers
Basic physical concepts
Laser structures
New GaAs-based materials for lasers
GaAs-Based Heterojunction Electron Devices Grown by MOCVD
Heterostructure field-effect transistors (HFETs)
Heterojunction bipolar transistors (HBTs)
Optoelectronic Integrated Circuits (OEICs)
Material considerations
OEICs on silicon substrates
The role of optoelectronic integration in computing
Examples of optoelectronic integration by MOCVD
InP–InP System: MOCVD Growth, Characterization, and Applications
Energy band structure of InP
Growth and characterization of InP using TEIn
Growth and characterization of InP using TMIn
Incorporation of dopants
Applications of InP epitaxial layers
GaInAs–InP System: MOCVD Growth, Characterization, and Applications
Growth conditions
Optical and crystallographic properties, and impurity incorporation in GaInAs grown by MOCVD
Shallow p+ layers in GaInAs grown by MOCVD by mercury implantation
GaInAs–InP heterojunctions: Multiquantum wells and superlattices grown by MOCVD
Magnetotransport in GaInAs–InP heterojunctions grown by MOCVD
Applications of GaInAs–InP system grown by MOCVD
GaInAsP–InP System: MOCVD Growth, Characterization, and Applications
Growth conditions
Characterization
Applications of GaInAsP–InP systems grown by MOCVD
Strained Heterostructures: MOCVD Growth, Characterization, and Applications
Growth procedure and characterization
Growth of GaInAs–InP multiquantum wells on GGG substrates
Applications
Monolayer epitaxy of (GaAs)n(InAs)n–InP by MOCVD
MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates
MOCVD growth of GaAs on silicon
InP grown on silicon
GaInAsP–InP grown on silicon
Applications
Optoelectronic Devices Based on Quantum Structures
GaAs and InP based quantum well infrared photodetectors (QWIP)
Self-assembled quantum dots, and quantum dot based photodetectors
Quantum dot lasers
InP based quantum cascade lasers (QCLs)
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