半导体所最新SCI论文（2019-7-4） [2019-07-04] |
| Record 1 of 10 Effects of SiO2 interlayers on the phase change behaviorin the multilayer Zn15Sb85/SiO2 materials
Authors: Zhang, R; Hu, YF; Chou, QQ; Lai, TS;Zhu, XQ JOURNAL OF ALLOYS AND COMPOUNDS Volume: 798 Pages: 342-349 Published: AUG25 2019 Language: English Documenttype: Article DOI: 10.1016/j.jallcom.2019.05.201
Abstract: In this study, the multilayer Zn15Sb85/SiO2 materialswere investigated for phase change memory application with the intention ofimproving thermal stability and switching speed. The Zn15Sb85/SiO2 materialsexhibited a high crystallization temperature (T-c similar to 230 degrees C),good data retention (T-10 similar to 160 degrees C), small density change(similar to 3.3%), flat surface and rapid amorphization speed (similar to 1.34ns). T-shaped phase change devices based on Zn15Sb85/SiO2 materials achievedlow RESET voltage (V-RESET similar to 1.3 V) in programming operation. Theresults showed that the multilayer Zn15Sb85/SiO2 material was a promising phasechange material with high thermal ability, low power consumption and rapidswitching speed. (C) 2019 Elsevier B.V. All rights reserved.
Record 2 of 10 Probing the acoustic phonon dispersion and sound velocityof graphene by Raman spectroscopy
Authors: Cong, X; Li, QQ; Zhang, X; Lin, ML; Wu,JB; Liu, XL; Venezuela, P; Tan, PH CARBON Volume: 149 Pages: 19-24 Published: AUG2019 Language: English Documenttype: Article DOI: 10.1016/j.carbon.2019.04.006
Abstract: The extraordinary thermal and elastic properties ofgraphene, mainly originating from its unique acoustic phonon branches nearGamma point in Brillouin zone, have attracted great attention in itsfundamental researches and practical applications. Here, we introduce anoptical technique to accurately probe longitudinal acoustic (LA) and transverseacoustic (TA) phonon branches of graphene near Gamma point by double resonantRaman scattering of the combination phonon modes in the range of 1650 - 53750px(-1) along with the overtone 2D' mode at similar to 3200 cm(-1). Thecorresponding sound velocities (nu(TA) = 12:9 km/s,nu(LA) = 19.9 km/s) ofgraphene have been accessed, which are about 10% smaller than those ofgraphite. Based on nu(TA) and nu(LA), the two-dimensional (2d) elasticstiffness (tension) coefficients c(11) and c(66), Young's modulus Y-2d andPoisson's ratio sigma(2d) can be estimated. The results demonstrate again thatdouble resonant Raman spectroscopy is a powerful tool to probe the fundamental propertiesof graphene. (C) 2019 Elsevier Ltd. All rights reserved.
Record 3 of 10
Authors: Zhou, L; Zuo, YH; Mallick, TK; Sundaram,S SCIENTIFIC REPORTS Volume: 9 Published: JUN19 2019 Language: English Documenttype: Article DOI: 10.1038/s41598-019-45374-x
Abstract: This paper presents perovskite solar cells employed withWO3 nanoparticles embedded carbon top electrode. WO3 nanoparticles works as aninorganic hole-transport material (HTM) to promote the hole-extraction in theperovskite/carbon interface as revealed by efficiency, electrochemicalimpedance and external quantum efficiency measurements. As a result, a 40%enhancement of energy conversion efficiency has been achieved compared to thereference devices with the energy conversion efficiency of 10.77% under standardconditions. In addition, the Li-TFSI can modify the interface betweenelectron-transport material (ETM) and perovskite, which may inhibit therecombination at the ETM/perovskite interface. The V-oc of devices upon themodification of Li-TFSI is increased from 887.9 to 934.2 mV. This workhighlights about the enlightenment of the effective performance of carbon-basedmesoscopic PSCs by the introduction of HTM and the modification of interfaces.
Record 4 of 10
Authors: Hao, TF; Tang, J; Shi, NN; Li, W; Zhu,NH; Li, M OPTICS LETTERS Volume: 44 Issue: 12 Pages: 3062-3065 Published: JUN15 2019 Language: English Documenttype: Article DOI: 10.1364/OL.44.003062
Abstract: We propose and experimentally demonstrate aphotonic-assisted approach to microwave frequency measurement based onfrequency-to-time mapping using a Fourier domain mode-locked optoelectronicoscillator (FDML OEO) operating around oscillation threshold. A relationshipbetween the frequency of the unknown input microwave signals and the timedifference of the output pulses is established with the help of the frequencyscanning capability of the FDML OEO and, thus, can be used for microwavefrequency measurement. The proposed scheme is characterized as having broadbandwidth, high resolution, multiple-frequency detection capability, andtunable measurement range. Microwave frequency measurement with a measurementrange up to 16 GHz and a low measurement error of 0.07 GHz is realized. (C)2019 Optical Society of America
Record 5 of 10 Coexistence of induced superconductivity and quantum Hallstates in InSb nanosheets
Authors: Zhi, JH; Kang, N; Su, FF; Fan, DX; Li,S; Pan, D; Zhao, SP; Zhao, JH; Xu, HQ PHYSICAL REVIEW B Volume: 99 Issue: 24 Published: JUN14 2019 Language: English Documenttype: Article DOI: 10.1103/PhysRevB.99.245302
Abstract: Hybrid superconducting devices based on high-mobilitytwo-dimensional electron gases with strong spin-orbit coupling are consideredto offer a flexible and scalable platform for topological quantum computation.Here, we report the realization and electrical characterization of hybriddevices based on high-quality InSb nanosheets and superconducting niobium (Nb)electrodes. In these hybrid devices, we observe gate-tunable proximity-inducedsupercurrent and multiple Andreev reflections, indicating a transparent Nb-InSbnanosheet interface. The high critical magnetic field of Nb combined withhigh-mobility InSb nanosheets allows us to exploit the transport properties inthe exotic regime where the superconducting proximity effect coexists with thequantum Hall effect. Transport spectroscopy measurements in such a regimereveal an enhancement of the conductance at the quantum Hall plateaus,accompanied by a pronounced zero-bias peak in the differential conductance. Wediscuss that these features originate from the formation of Andreev edge statesat the superconductor-InSb nanosheet interface in the quantum Hall regime. Inaddition to shedding light on the interplay between superconductivity andquantum Hall effect, our work opens a new possibility to develop hybridsuperconducting devices based on 2D semiconductor nanosheets with strongspin-orbit coupling.
Record 6 of 10 Enhanced Photoresponse in MoTe2 Photodetectors withAsymmetric Graphene Contacts
Authors: Wei, X; Yan, FG; Lv, QS; Zhu, WK; Hu, C;Patane, A; Wang, KY ADVANCED OPTICAL MATERIALS Volume: 7 Issue: 12 Published: JUN2019 Language: English Documenttype: Article
Abstract: Atomically thin 2D materials are promising candidates forminiaturized high-performance optoelectronic devices. This study reports onmultilayer MoTe2 photodetectors contacted with asymmetric electrodes based onn- and p-type graphene layers. The asymmetry in the graphene contacts creates alarge (E-bi similar to 100 kV cm(-1)) built-in electric field across the short(l = 15 nm) MoTe2 channel, causing a high and broad (lambda = 400-1400 nm)photoresponse even without any externally applied voltage. Spatially resolvedphotovoltage maps reveal an enhanced photoresponse and larger built-in electricfield in regions of the MoTe2 layer between the two graphene contacts.Furthermore, a fast (similar to 10 mu s) photoresponse is achieved in both thephotovoltaic and photoconductive operation modes of the junction. The findingscan be extended to other 2D materials and offer prospects for theimplementation of asymmetric graphene contacts in future low-poweroptoelectronic applications.
Record 7 of 10
Authors: Wen, ZX; Zhang, F; Shen, ZW; Chen, J;He, YW; Yan, GG; Liu, XF; Zhao, WS; Wang, L; Sun, GS; Zeng, YP CHINESE PHYSICS B Volume: 28 Issue: 6 Published: JUN2019 Language: English Documenttype: Article DOI: 10.1088/1674-1056/28/6/068504
Abstract: 10-kV 4H-SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTshave an active area of 2.25 mm(2) with a die size of 3 mmx 3 mm A step spacemodulated junction termination extension (SSM-JTE) structure is introduced andfabricated to improve the blocking performance of the IGBTs. The SiC p-channelIGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at 10kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell(H-cell) structure is designed and compared with the conventional interdigitalcell (I-cell) structure. At an on-state current of 50 A/cm(2), the voltagedrops of I-cell IGBT and H-cell IGBT are 10.1 V and 8.3 V respectively.Meanwhile, on the assumption that the package power density is 300 W/cm(2), themaximum permissible current densities of the I-cell IGBT and H-cell IGBT aredetermined to be 34.2 A/cm(2) and 38.9 A/cm(2) with forward voltage drops of8.8 V and 7.8 V, respectively. The differential specific on-resistance ofI-cell structure and H-cell structure IGBT are 72.36 m OmegaNaN(2) and 56.92 mOmegaNaN(2), respectively. These results demonstrate that H-cell structuresilicon carbide IGBT with SSM-JTE is a promising candidate for high powerapplications.
Record 8 of 10
Authors: Dou, YM; Han, WH; Guo, YY; Zhao, XS;Zhang, XD; Wu, XY; Yang, FH CHINESE PHYSICS B Volume: 28 Issue: 6 Published: JUN2019 Language: English Documenttype: Article DOI: 10.1088/1674-1056/28/6/066804
Abstract: We have investigated the temperature-dependent effectivemobility characteristics in impurity band and conduction subbands of n-dopedsilicon junctionless nanowire transistors. It is found that the electroneffective mobility of the first subband in 2-fold valleys is higher than thatof the second subband in 4-fold valleys. There exists a maximum value for theeffective subband mobilities at low temperatures, which is attributed to theincrease of thermally activated electrons from the ionized donors in theimpurity band. The experimental results indicate that the effective subbandmobility is temperature-dependent on the electron interactions by thermalactivation, impurity scattering, and intersubband scattering.
Record 9 of 10 EDFA Anti-Irradiation Schemes for Inter-Satellite OpticalDPSK Communication Systems
Authors: Yan, BL; Liu, HF; Liu, B; Liu, JG;Zhang, H; Yang, CK; Hu, ZH; Li, XL IEEE PHOTONICS JOURNAL Volume: 11 Issue: 3 Published: JUN2019 Language: English Documenttype: Article DOI: 10.1109/JPHOT.2019.2916775
Abstract: The uprising of rare-earth-doped fiber amplifiertechnology provides an effective solution to signal power compensation forinterstellar optical communication systems, but significant signal powerattenuation induced by spatial irradiation has ever been a significant issue tobe resolved in practical applications. In order to explore the impact ofradiation on the performances of high-speed differential phase shift keying(DPSK) satellite communication systems using EDFA preamplification technique,the irradiation effect on output central wavelength, half width, and noisefigure (NF) of EDFA has been studied. Different anti-irradiation schemesemploying Co-60 radiation sources with a total radiation dose of up to 300 kradare compared from experimental perspective to optimize the anti-irradiationscheme. Radiation-induced attenuation (RIA) as well as increase in NF of theEDFA is considered in our simulation model, by which the limitations of thephysical shielding scheme could be clarified and quantitatively evaluated. Weconclude that compared to the RIA effect, the increase in noise figure plays amajor role in the degradation of communication systems. In addition, accordingto simulation results of two high-speed DPSK systems, some anti-irradiationschemes are proposed as recommendations for future applications ofEDFA-assisted optical systems under radiation exposure environments.
Record 10 of 10
Authors: Du, XQ; Li, C; Li, B; Wang, N; Zhao, Y;Yang, F; Yu, K; Zhou, L; Li, XL; Cheng, BW; Xue, CL CHINESE PHYSICS B Volume: 28 Issue: 6 Published: JUN2019 Language: English Documenttype: Article DOI: 10.1088/1674-1056/28/6/064208
Abstract: Step-coupler waveguide-integrated Ge/Si avalanchephotodetector (APD) is based on the vertical multimode interference (MMI),enhancing light scattering towards the Ge active region and creating mirrorimages of optical modes close to the Ge layer. However, there are twoineluctable contact angels between selectively epitaxial growth Ge and Silayers and selectively epitaxial growth Si and Si substrate, which has aneffect on the coupling efficiency and the absorption of the photodetector.Therefore, step-coupled Ge/Si avalanche photodetectors with different steplengths are designed and fabricated. It is found that responsivity of APDs withstep-coupler-length of 3.0 mu m is 0.51 A/W at -6 V, 21% higher than that of1.5 mu m, which matches well with simulation absorption. The multiplicationgain factor is as high as 50, and the maximum gain-bandwidth product reaches upto 376 GHz.
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