半导体所最新SCI论文（2019-3-21） [2019-03-21] |
| Record 1 of 10
Authors: Yang, JC; Zhang, Z; Qi, N; Liu, LY; Liu,J; Wu, NJ SCIENCE CHINA-INFORMATION SCIENCES Volume: 62 Issue: 6 Published: JUN2019 Language: English Documenttype: Article DOI: 10.1007/s11432-018-9423-y
Abstract: This paper proposes a synthesized injection-lockedbang-bang phased-locked loop (SILBBPLL) with high digital controlled oscillator(DCO) frequency resolution. The SILBBPLL is expressed with hardware descriptionlanguage and automatically placed & routed (APR) by using standard digitalcircuit design flow. As the mismatch issues of the circuits are not consideredcarefully during the APR design flow, the phase noise performance is severelydeteriorated. We adopt pulse injection locking technique to improve the phasenoise performance. The DCO frequency resolution is critical for reducing the referencespur in a digital injection-locked PLL. Therefore, we propose novel frequencytuning circuits to increase the DCO frequency resolution so that the referencespurs are reduced. The frequency tuning circuits consist of a standard cellbased high-linearity output feedback DAC (OFDAC) and two custom varactors. TheOFDAC is used to tune the frequency of the DCO with the custom varactorprecisely. The custom varactor is firstly designed, added into the standardcell library, and APR with the standard cells. The SILBBPLL chip with a corearea of 0.008 mm2 is implemented in 65 nm CMOS process. When operating at 1.8GHz, the measured results show that the root-mean-square (RMS) jitterintegrated from 10 kHz to 100 MHz is 1.1 ps, and the power consumption is 1.5mW with a 0.8-V supply. The proposed SILBBPLL achieves a figure-of-merit (FoM)of -237.4 dB and a reference spur of -50.9 dBc.
Record 2 of 10 Growth of single crystalline GePb film on Ge substrate bymagnetron sputtering epitaxy
Authors: Liu, XQ; Zheng, J; Zhou, L; Liu, Z; Zuo,YH; Xue, CL; Cheng, BW JOURNAL OF ALLOYS AND COMPOUNDS Volume: 785 Pages: 228-231 Published: MAY15 2019 Language: English Documenttype: Article DOI: 10.1016/j.jallcom.2019.01.163
Abstract: This paper reports the synthesis of single-crystallineGePb alloy films on a Ge(100) substrate by magnetron sputter epitaxy. Theas-grown GePb alloy films possess high crystalline quality and no dislocations,as revealed by X-ray diffractometry, transmission electron microscopy. The Pbcomposition of the GePb alloy was about 0.4% at the growth temperature of 250degrees C and it decreased with increasing substrate temperature up to 400degrees C. The thermal stability of the GePb alloy was studied using Ramanspectra and atomic force microscopy (AFM)results, and it was observed that Pbsegregated from the GePb alloy above 400 degrees C. The successful growth ofsingle-crystal GePb lays the foundation for future GePb device fabrication. (C)2019 Elsevier B.V. All rights reserved.
Record 3 of 10 Accuracy monitoring and enhancement for microwavelocalization using parallel optical delay detector
Authors: Ma, Q; Zhao, X; Cao, Z; Liu, Y; Xiang, Y OPTICS COMMUNICATIONS Volume: 439 Pages: 94-98 Published: MAY15 2019 Language: English Documenttype: Article DOI: 10.1016/j.optcom.2019.01.048
Abstract: The localization of radio devices is of great importancefor wireless communication systems. Instead of bulky, lossy delay lines inelectrical solutions, parallel optical delay detectors (PODD) based onMach-Zehnder modulator (MZM) can be used to provide a stable and accurateangle-of-arrival (AOA) measurement, or equivalently atime-difference-of-arrival (TDOA) measurement, of a microwave signal bytranslating the phase shift information into the change of optical power. Sincethe response of most MZMs starts from near 0 kHz, such scheme is intrinsicallybroadband as wide as the bandwidth of the engaged MZM. However, there areseveral potential factors that can cause measurement errors. To improve theaccuracy of AOA measurement, in this paper, we propose a solution to increasethe noise tolerance without any additional hardware. We analyze that suchsolution can be used for both IM-PODD and PM-PODD. Based on the proposedsolution, the IM-PODD achieves a greatly reduced normalized measurement errorfrom 2.17% to 0.71%.
Record 4 of 10
Authors: Wang, GQ; Hao, TF; Li, W; Zhu, NH; Li, M OPTICS COMMUNICATIONS Volume: 439 Pages: 133-136 Published: MAY15 2019 Language: English Documenttype: Article DOI: 10.1016/j.optcom.2019.01.014
Abstract: We propose and demonstrate a method to detect and amplifywideband low-power RF signals using a stimulated Brillouin scattering-basedtunable optoelectronic oscillator (OEO), which shows a detection frequencyranging from 1 to 17 GHz and a maximum amplification factor of 29 dB. Thereceived RF signal is detected and amplified when it matches the potentialoscillation mode of the OEO. A detection accuracy of +/- 40 MHz and an averagegain of 17 dB are realized in the experiment. To the best of our knowledge,they are the widest frequency detection range and highest magnification effectachieved by an OEO-based signal detector.
Record 5 of 10
Authors: Wang, Q; Yuan, GD; Liu, WQ; Zhao, S;Liu, ZQ; Chen, Y; Wang, JX; Li, JM JOURNAL OF MATERIALS SCIENCE Volume: 54 Issue: 10 Pages: 7780-7788 Published: MAY2019 Language: English Documenttype: Article DOI: 10.1007/s10853-019-03473-0
Abstract: The epitaxial growth of InGaN/GaN light-emitting diodes(LEDs) with high-indium (In) content on Si (100) substrate faces significantchallenges. The study described in this paper focuses on semipolar yellowInGaN/GaN LEDs formed on a triangular-striped Si (100) substrate by metalorganic chemical vapor deposition. By controlling the growth temperature ofInGaN to modulate the In content of InGaN/GaN multiple quantum wells (MQWs),high-In-content InGaN/GaN MQWs were grown on semipolar (1 (1) over bar 01) planesat relatively low temperatures. Consequently, InGaN/GaN MQW LEDs grown ontriangular-striped substrates produce emissions ranging from red to yellowunder different injection currents. In particular, when the injection currentexceeds 160 mA, the LEDs achieve stable yellow emission. This is the first timesuch a long waveband emission has been achieved in semipolar InGaN/GaN LEDsformed on Si (100) substrate.
Record 6 of 10
Authors: Jamil, A; Fareed, S; Tiwari, N; Li, CB;Cheng, BW; Xu, XL; Rafiq, MA APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 125 Issue: 4 Published: APR2019 Language: English Documenttype: Article DOI: 10.1007/s00339-019-2544-6
Abstract: High quality, 120nm thin ZnO and Ti-doped ZnO (TZO) filmswere deposited on silicon substrates using magnetron co-sputtering technique.Surface roughness of the films was 2nm. Ti incorporation effect on thestructure, morphology, conductivity, density of states (DOS) and conductionmechanism was investigated in detail. Ti ions were incorporated in theinterstitial sites of hexagonal ZnO lattice. Average crystallite size increasedfrom 16.63 to 19.08nm upon Ti doping in ZnO film. Conduction mechanism changedfrom overlapping large polaron tunneling (OLPT) for undoped ZnO film tocorelated barrier hopping (CBH) for TZO film. The experimental data were fittedtheoretically using OLPT and CBH models to calculate frequency andtemperature-dependent DOS. An enhancement of ac conductivity and DOS wasobserved with the doping of Ti in ZnO thin film. Complex modulus study of TZOfilm revealed transition from long-range mobility to short-range mobility withincrease in frequency.
Record 7 of 10 Ray dynamics and wave chaos in circular-side polygonalmicrocavities
Authors: Tang, M; Weng, HZ; Xiao, JL; Huang, YZ PHYSICAL REVIEW A Volume: 99 Issue: 3 Published: MAR6 2019 Language: English Documenttype: Article DOI: 10.1103/PhysRevA.99.033814
Abstract: We systematically study mode characteristics incircular-side polygonal microcavities (CSPMs), particularly in these cavitieswith chaotic ray dynamics, in order to gain insights into the wave chaos in theCSPMs. The circular sides could improve the light confinement of the CSPMs asconcave mirrors, in that regular islands are formed around the stable fixedpoints in the Poincare surface of sections (SOS). However, the fixed pointsbecome unstable under some specific deformations, and global chaos with quasistable"star islands" appears around these fixed points in the Poincare SOSaccordingly. The phenomenon can be well explained by the ray dynamic analysisunder the second-order approximation, and the results show that the high-orderterms play an important role in the motions of light rays and destroy theregular islands in the phase space leading to chaotic ray dynamics. Thedestruction of regular islands results in degradation of mode quality factorsand dispersed mode field distributions according to the finite-element methodsimulation of the confined modes. Furthermore, an unusual variation of modequality factor is observed by varying the refractive index of the outside mediafor the CSPM with chaotic ray dynamics.
Record 8 of 10 Temporal Cloak Without Synchronization
Authors: Lin, ZX; Sun, SQ; Li, W; Zhu, NH; Li, M IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 31 Issue: 5 Pages: 373-376 Published: MAR1 2019 Language: English Documenttype: Article
Abstract: Considered to only exist in fairy tales in the past,invisibility cloaks have been successively converted into reality no matter inthe spatial domain or the temporal domain. Inspired by the spatial cloaking,time gaps are utilized to hide temporal events. However, a sophisticatedsynchronization for cloaking is indispensable in these cloaking techniques,therefore leaving inconvenience for the realization of the temporal cloak.Here, by exploiting the temporal Talbot effect, we propose a brand new scheme andconcept to achieve a temporal cloak without any synchronization for thecloaking process, under which the intensity-modulated event is directly turnedinto invisibility in intensity through temporal averaging effect induced by theTalbot effect. We successfully realize the temporal cloak for periodic andpseudo-random signals. We also find that the higher order temporal Talboteffect is beneficial to the cloaking performance. Due to the transformedinformation on the phase, the data could be recovered from theintensity-cloaked waveform, leading to a non-full-field cloak. This method andits concept render a distinct perspective for the temporal cloak, extendtemporal cloak to the pulsed-wave, and promote the development of confidentialcommunication.
Record 9 of 10
Authors: Wang, SC; Lv, XQ; Su, Y; Fan, ZY; Fang,WH; Duan, JZ; Zhang, S; Ma, BJ; Liu, F; Chen, HD; Geng, ZX; Liu, H SMALL Volume: 15 Issue: 9 Published: MAR1 2019 Language: English Documenttype: Article
Abstract: Cell lysis is an important and crucial step for thedetection of intracellular secrets. Usually, cell lysis is based on strongultrasonic waves or toxic chemical regents, which require a large amount ofcell suspension. To obtain high efficiency cell lysis for a small amount ofsample, a mechanical cell lysis method based on a surface acoustic wave (SAW)microchip is proposed. The microchip simply consists of a piece of LiNbO3crystal substrate, interdigitated transducers (IDTs) with 80 pairs of parallel electrodesand 3M Magic Tapes. The modulated input electrical signal is coupled into thesubstrate through IDTs, which produces an acoustic stream in the droplet on thesurface of a substrate. When a biofluid droplet containing cells andmicroparticles is dropped on the surface of the microchip, the cells andmicroparticles are accelerated and collide with each other. The fluorescencestaining results illustrate that the cell membrane is efficiently destroyed andthat proteins as well as nucleic acids inside the cell are released. Theexperimental results show that this method has a high efficiency and low sampleconsumption. The potential application is the pretreatment of a small amount oftested sample in a hospital or biolab.
Record 10 of 10 Control of magnetic anisotropy in epitaxial Co2MnAl thinfilms through piezo-voltage-induced strain
Authors: Zhang, B; Wang, HL; Cao, J; Li, YC;Yang, MY; Xia, K; Zhao, JH; Wang, KY JOURNAL OF APPLIED PHYSICS Volume: 125 Issue: 8 Published: FEB28 2019 Language: English Documenttype: Article DOI: 10.1063/1.5039430
Abstract: The voltage-controlled magnetic anisotropy of variousmagnetic materials is an effective method to realize the electronic deviceswith low power consumption. Here, we investigated the magnetic properties inCo2MnAl/GaAs heterostructures controlled by piezo voltages-induced strain usingthe magneto-optical Kerr effect microscopy. The coexistence of the in-planecubic and uniaxial magnetic anisotropies was observed in the initial state ofCo2MnAl thin films. The magnetic anisotropy was manipulated effectively by thepiezo voltages. The two-step magnetic hysteresis loop measured along the [1-10]direction was changed into a square loop when the piezo voltage was -30 V(compressed state). On the contrary, the loop of the [110] direction waschanged into a two-step loop. The loops of [100] and [010] axes represented thehard axes and were almost unchanged with the piezo voltages. We found that thetransformations of loops in [110] and [1-10] axes were manipulated by the piezovoltage induced additional uniaxial anisotropy. Finally, we demonstrated thatthe planar Hall resistance (RH) in the Hall device can be effectivelycontrolled by the piezo voltages. Our study identified that the voltagecontrolled room temperature magnetic devices through strain engineering couldhave great potential for spintronic applications. Published by AIP Publishing.
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