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| Record 1 of 9 |
| Author(s): Zhu, BL (Zhu, B. L.); Zhao, XZ (Zhao, X. Z.); Su, FH (Su, F. H.); Li, GH (Li, G. H.); Wu, XG (Wu, X. G.); Wu, J (Wu, J.); Wu, R (Wu, R.) |
| Title: Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition |
| Source: VACUUM, 84 (11): 1280-1286 JUN 4 2010 |
| Abstract: ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT. (C) 2010 Elsevier Ltd. All rights reserved. |
| ISSN: 0042-207X |
| DOI: 10.1016/j.vacuum.2010.01.059 |
| Record 2 of 9 |
| Author(s): Che, KJ (Che, Kai-Jun); Huang, YZ (Huang, Yong-Zhen) |
| Title: Mode characteristics of metallically coated square microcavity connected with an output waveguide |
| Source: JOURNAL OF APPLIED PHYSICS, 107 (11): Art. No. 113103 JUN 1 2010 |
| Abstract: Mode characteristics of a square microcavity with an output waveguide on the middle of one side, laterally confined by an insulating layer SiO2 and a p-electrode metal Au, are investigated by two-dimensional finite-difference time-domain technique. The mode quality (Q) factors versus the width of the output waveguide are calculated for Fabry-Peacuterot type and whispering-gallery type modes in the square cavity. Mode coupling between the confined modes in the square cavity and the guided modes in the output waveguide determines the mode Q factors, which is greatly influenced by the symmetry behaviors of the modes. Fabry-Peacuterot type modes can also have high Q factors due to the high reflectivity of the Au layer for the vertical incident mode light rays. For the square cavity with side length 4 mu m and refractive index 3.2, the mode Q factors of the Fabry-Peacuterot type modes can reach 10(4) at the mode wavelength of 1.5 mu m as the output waveguide width is 0.4 mu m. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3431400] |
| ISSN: 0021-8979 |
| Article Number: 113103 |
| DOI: 10.1063/1.3431400 |
| Record 3 of 9 |
| Author(s): Guo, Y (Guo Yan); Liu, XL (Liu Xiang-Lin); Song, HP (Song Hua-Ping); Yang, AL (Yang An-Li); Zheng, GL (Zheng Gao-Lin); Wei, HY (Wei Hong-Yuan); Yang, SY (Yang Shao-Yan); Zhu, QS (Zhu Qin-Sheng); Wang, ZG (Wang Zhan-Guo) |
| Title: Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy |
| Source: CHINESE PHYSICS LETTERS, 27 (6): Art. No. 067302 JUN 2010 |
| Abstract: X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 +/- 0.19 eV, according to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V : Delta E-C = E-g(GaN) - E-g(Ge) - Delta E-V, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6 +/- 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices. |
| ISSN: 0256-307X |
| Article Number: 067302 |
| DOI: 10.1088/0256-307X/27/6/067302 |
| Record 4 of 9 |
| Author(s): Zhao, J (Zhao, Jie); Zeng, YP (Zeng, Yiping); Liu, C (Liu, Chao); Cui, LJ (Cui, Lijie); Li, YB (Li, Yanbo) |
| Title: Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy |
| Source: APPLIED SURFACE SCIENCE, 256 (22): 6881-6886 SEP 1 2010 |
| Abstract: ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R-VI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R-VI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R-VI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R-VI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R-VI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable R-VI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films. (C) 2010 Elsevier B. V. All rights reserved. |
| ISSN: 0169-4332 |
| DOI: 10.1016/j.apsusc.2010.04.105 |
| Record 5 of 9 |
| Author(s): Dong, JJ (Dong, J. J.); Zhang, XW (Zhang, X. W.); You, JB (You, J. B.); Cai, PF (Cai, P. F.); Yin, ZG (Yin, Z. G.); An, Q (An, Q.); Ma, XB (Ma, X. B.); Jin, P (Jin, P.); Wang, ZG (Wang, Z. G.); Chu, PK (Chu, Paul K.) |
| Title: Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO |
| Source: ACS APPLIED MATERIALS & INTERFACES, 2 (6): 1780-1784 JUN 2010 |
| Abstract: Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen. |
| ISSN: 1944-8244 |
| DOI: 10.1021/am100298p |
| Record 6 of 9 |
| Author(s): Liu, Y (Liu, Yu); Chen, YH (Chen, Yonghai); Wang, ZG (Wang, Zhanguo) |
| Title: Kondo effect in a triangular triple quantum dots ring with three terminals |
| Source: SOLID STATE COMMUNICATIONS, 150 (25-26): 1136-1140 JUL 2010 |
| Abstract: For a triangular triple quantum dots (TTQDs) ring with three terminals, when lowering one of the dot-lead coupling to realize the left-right (L-R) reflection symmetry coupling, the internal C-upsilon of the TTQDs is well preserved in the absence of many-body effect for the symmetric distribution of the dot-lead coupling on the molecular orbits. In the presence of Kondo effect, the decrement of one of the dot-lead couplings suppresses the inter-dot hopping. This happens especially for the coupled quantum dot (QD), which decouples with the other two ones gradually to form a localized state near the Fermi level As a result, the internal dynamic symmetry of the TTQDs ring is reduced to L-R reflection symmetry, and simultaneously, the linear conductance is lifted for the new forming molecular orbit near the Fermi level (C) 2010 Elsevier Ltd All rights reserved |
| ISSN: 0038-1098 |
| DOI: 10.1016/j.ssc.2010.03.022 |
| Record 7 of 9 |
| Author(s): Yang, YD (Yang, Yue-De); Huang, YZ (Huang, Yong-Zhen); Guo, WH (Guo, Wei-Hua); Lu, QY (Lu, Qiaoyin); Donegan, JF (Donegan, John F.) |
| Title: Enhancement of quality factor for TE whispering-gallery modes in microcylinder resonators |
| Source: OPTICS EXPRESS, 18 (12): 13057-13062 JUN 7 2010 |
| Abstract: The enhancement of quality factor for TE whispering-gallery modes is analyzed for three-dimensional microcylinder resonators based on the destructive interference between vertical leakage modes. In the microcylinder resonator, the TE whispering-gallery modes can couple with vertical propagation modes, which results in vertical radiation loss and low quality factors. However, the vertical loss can be canceled by choosing appropriate thickness of the upper cladding layer or radius of the microcylinder. A mode quality factor increase by three orders of magnitude is predicted by finite-difference time-domain simulation. Furthermore, the condition of vertical leakage cancellation is analyzed. (C) 2010 Optical Society of America |
| ISSN: 1094-4087 |
| Record 8 of 9 |
| Author(s): Li, JY (Li, Junyi); An, JM (An, Junming); Wu, YD (Wu, Yuanda); Li, JG (Li, Jianguang); Wang, HJ (Wang, Hongjie); Hu, XW (Hu, Xiongwei) |
| Title: Fabrication of a novel silica PLC hybrid integrated triplexer |
| Source: CHINESE OPTICS LETTERS, 8 (6): 588-590 JUN 10 2010 |
| Abstract: A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz. |
| ISSN: 1671-7694 |
| DOI: 10.3788/COL20100806.0588 |
| Record 9 of 9 |
| Author(s): Chang, XY (Chang Xiu-Ying); Dou, XM (Dou Xiu-Ming); Sun, BQ (Sun Bao-Quan); Xiong, YH (Xiong Yong-Hua); Ni, HQ (Ni Hai-Qiao); Niu, ZC (Niu Zhi-Chuan) |
| Title: Tuning photoluminescence of single InAs quantum dot by electric field |
| Source: ACTA PHYSICA SINICA, 59 (6): 4279-4282 JUN 2010 |
| Abstract: By using photoluminescence (PL) and time-resolved PL spectra, the optical properties of single InAs quantum dot (QD) embedded in the p-1-n structure have been studied under an applied electric field With the increasing of electric field, the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD. |
| ISSN: 1000-3290 |
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