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[2010-05-07]

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Record 1 of 11
Author(s): Sun, LL (Sun, Lili); Liu, C (Liu, Chao); Li, JM (Li, Jianming); Wang, JX (Wang, Junxi); Yan, FW (Yan, Fawang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
Title: Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method
Source: MATERIALS LETTERS, 64 (9): 1031-1033 MAY 15 2010
Abstract: Diluted-magnetic GaN:Sm:Eu films have been fabricated by co-implantation of Sm and Eu ions into c-plane (0001) GaN films and a subsequent annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. Compared with GaN:Sm films, more defects have been introduced into GaN:Sm:Eu films due to the Eu implantation process. According to the SQUID analysis, GaN:Sm:Eu films exhibit clear room-temperature ferromagnetism. Moreover, GaN:Sm:Eu films show a lower saturation magnetization (Ms) than GaN:Sm films. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2010.01.087


Record 2 of 11
Author(s): Zhu, YH (Zhu, Yuan-Hui); Xu, Q (Xu, Qiang); Fan, WJ (Fan, Wei-Jun); Wang, JW (Wang, Jian-Wei)
Title: Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser
Source: JOURNAL OF APPLIED PHYSICS, 107 (7): Art. No. 073108 APR 1 2010
Abstract: Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3329424]
ISSN: 0021-8979
Article Number: 073108
DOI: 10.1063/1.3329424


Record 3 of 11
Author(s): Deng, HX (Deng, Hui-Xiong); Li, JB (Li, Jingbo); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Walsh, A (Walsh, Aron); Wei, SH (Wei, Su-Huai)
Title: Origin of antiferromagnetism in CoO: A density functional theory study
Source: APPLIED PHYSICS LETTERS, 96 (16): Art. No. 162508 APR 19 2010
Abstract: We have investigated the origin of antiferromagnetism of CoO in the rocksalt structure using spin-polarized density functional theory calculations. We find that in the rocksalt structure, the superexchange interaction between the occupied and unoccupied e(g) states plays the dominant role, which leads to an antiferromagnetic ground state, but the system also has a strong direct exchange interaction between the partially occupied minority spin t(2g) states that leads to the unusual situation that the ferromagnetic phase is more stable than most antiferromagnetic configurations. (C) 2010 American Institute of Physics. [doi:10.1063/1.3402772]
ISSN: 0003-6951
Article Number: 162508
DOI: 10.1063/1.3402772


Record 4 of 11
Author(s): Tang, AW (Tang, Aiwei); Teng, F (Teng, Feng); Hou, YB (Hou, Yanbing); Wang, YS (Wang, Yongsheng); Tan, FR (Tan, Furui); Qu, SC (Qu, Shengchun); Wang, ZG (Wang, Zhanguo)
Title: Optical properties and electrical bistability of CdS nanoparticles synthesized in dodecanethiol
Source: APPLIED PHYSICS LETTERS, 96 (16): Art. No. 163112 APR 19 2010
Abstract: We reported the synthesis of CdS semiconductor nanoparticles using a simple one-pot reaction by thermolysis of cadmium acetylacetonate in dodecanethiol. Optical measurements of the as-obtained CdS nanoparticles revealed that their optical properties were closely related to surface effects. Based upon the cocktail of poly (N-vinylcarbazole) (PVK) and CdS nanoparticles, a bistable device was fabricated by a simple solution processing technique. Such a device exhibited a remarkable electrical bistability, which was attributed to the electric field-assisted charge transfer between PVK and the CdS nanoparticles capped by dodecaethiol. The conduction mechanism changed from an injection-controlled current to a bulk-controlled one during switching from OFF-state to ON-state. (C) 2010 American Institute of Physics. [doi:10.1063/1.3402770]
ISSN: 0003-6951
Article Number: 163112
DOI: 10.1063/1.3402770


Record 5 of 11
Author(s): Wu, CM (Wu ChaoMin); Shang, JZ (Shang JingZhi); Zhang, BP (Zhang BaoPing); Zhang, JY (Zhang JiangYong); Yu, JZ (Yu JinZhong); Wang, QM (Wang QiMing)
Title: Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 53 (2): 313-316 FEB 2010
Abstract: We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.
ISSN: 1674-7321
DOI: 10.1007/s11431-010-0037-0


Record 6 of 11
Author(s): Wu, H (Wu Hao); Zheng, HZ (Zheng HouZhi); Liu, J (Liu Jian); Li, GR (Li GuiRong); Xu, P (Xu Ping); Zhu, H (Zhu Hui); Zhang, H (Zhang Hao); Zhao, JH (Zhao JianHua)
Title: Spin injection in the multiple quantum-well LED structure with the Fe/AlO (x) injector
Source: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 53 (4): 649-653 APR 2010
Abstract: A spin-injection/-detection device has been fabricated based on the multiple quantum well light emitting diode (LED) structure. It is found that only a broad electroluminescence (EL) peak of a full width at half maximum of 8.6 nm appears at the wavelength of 801 nm in EL spectra with a circular luminescence polarization degree of 18%, despite PL spectra always show three well resolved peaks. The kinetic energy gained by injected electrons and holes in their drift along opposite directions broadens the EL peak, and makes three EL peaks converge together. The same process also destroys the injected spin polarization of electrons mainly dominated by the Bir-Aronov-Pikus spin relaxing mechanism.
ISSN: 1674-7348
DOI: 10.1007/s11433-010-0164-4


Record 7 of 11
Author(s): Wu, ZH (Wu, Zhenhua); Zhang, ZZ (Zhang, Z. Z.); Chang, K (Chang, Kai); Peeters, FM (Peeters, F. M.)
Title: Quantum tunneling through graphene nanorings
Source: NANOTECHNOLOGY, 21 (18): Art. No. 185201 MAY 7 2010
Abstract: We investigate theoretically quantum transport through graphene nanorings in the presence of a perpendicular magnetic field. Our theoretical results demonstrate that the graphene nanorings behave like a resonant tunneling device, contrary to the Aharonov-Bohm oscillations found in conventional semiconductor rings. The resonant tunneling can be tuned by the Fermi energy, the size of the central part of the graphene nanorings and the external magnetic field.
ISSN: 0957-4484
Article Number: 185201
DOI: 10.1088/0957-4484/21/18/185201


Record 8 of 11
Author(s): Qi, XQ (Qi, Xiaoqiong); Liu, JM (Liu, Jiaming); Zhang, XP (Zhang, Xiaoping); Xie, L (Xie, Liang)
Title: Fiber Dispersion and Nonlinearity Influences on Transmissions of AM and FM Data Modulation Signals in Radio-Over-Fiber System
Source: IEEE JOURNAL OF QUANTUM ELECTRONICS, 46 (8): 1170-1177 AUG 2010
Abstract: Transmission properties of data amplitude modulation (AM) and frequency modulation (FM) in radio-over-fiber (RoF) system are studied numerically. The influences of fiber dispersion and nonlinearity on different microwave modulation schemes, including double side band (DSB), single side band (SSB) and optical carrier suppression (OCS), are investigated and compared. The power penalties at the base station (BS) and the eye opening penalties of the recovered data at the end users are both calculated and analyzed. Numerical simulation results reveal that the power penalty of FM can be drastically decreased due to the larger modulation depth it can achieve than that of AM. The local spectrum broadening around subcarrier microwave frequency of AM due to fiber nonlinearity can also be eliminated with FM. It is demonstrated for the first time that the eye openings of the FM recovered data can be controlled by its modulation depths and the coding formats. Negative voltage encoding format was used to further decrease the RF frequency thus increase the fluctuation period considering their inverse relationship.
ISSN: 0018-9197
DOI: 10.1109/JQE.2010.2044747


Record 9 of 11
Author(s): Liu, AJ (Liu, Anjin); Chen, W (Chen, Wei); Xing, MX (Xing, Mingxin); Zhou, WJ (Zhou, Wenjun); Qu, HW (Qu, Hongwei); Zheng, WH (Zheng, Wanhua)
Title: Phase-locked ring-defect photonic crystal vertical-cavity surface-emitting laser
Source: APPLIED PHYSICS LETTERS, 96 (15): Art. No. 151103 APR 12 2010
Abstract: Phase-locked oxide-confined ring-defect photonic crystal vertical-cavity surface-emitting laser is presented. The coupled-mode theory is employed to illustrate the two supermodes of the device, in-phase and out-of-phase supermode. Experimental results verify the two supermodes by the characteristics of the spectra and the far field patterns. At the lower current, only the out-of-phase supermode is excited, whereas under the higher current, the in-phase supermode also appears at the shorter wavelength range. In addition, the measured spectral separation between the two supermodes agrees well with the theoretical result.
ISSN: 0003-6951
Article Number: 151103
DOI: 10.1063/1.3394006


Record 10 of 11
Author(s): Yang, AL (Yang, A. L.); Song, HP (Song, H. P.); Liang, DC (Liang, D. C.); Wei, HY (Wei, H. Y.); Liu, XL (Liu, X. L.); Jin, P (Jin, P.); Qin, XB (Qin, X. B.); Yang, SY (Yang, S. Y.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.)
Title: Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
Source: APPLIED PHYSICS LETTERS, 96 (15): Art. No. 151904 APR 12 2010
Abstract: Temperature-dependent photoluminescence characteristics of non-polar m-plane ZnO and ZnMgO alloy films grown by metal organic chemical vapor deposition have been studied. The enhancement in emission intensity caused by localized excitons in m-plane ZnMgO alloy films was directly observed and it can be further improved after annealing in nitrogen. The concentration of Zn vacancies in the films was increased by alloying with Mg, which was detected by positron annihilation spectroscopy. This result is very important to directly explain why undoped Zn1-xMgxO thin films can show p-type conduction by controlling Mg content, as discussed by Li [Appl. Phys. Lett. 91, 232115 (2007)].
ISSN: 0003-6951
Article Number: 151904
DOI: 10.1063/1.3394012


Record 11 of 11
Author(s): Yu, TB (Yu, Tianbao); Huang, JH (Huang, Jiehui); Liu, NH (Liu, Nianhua); Yang, JY (Yang, Jianyi); Liao, QH (Liao, Qinghua); Jiang, XQ (Jiang, Xiaoqing)
Title: Design of a compact polarizing beam splitter based on a photonic crystal ring resonator with a triangular lattice
Source: APPLIED OPTICS, 49 (11): 2168-2172 APR 10 2010
Abstract: We propose and simulate a new kind of compact polarizing beam splitter (PBS) based on a photonic crystal ring resonator (PCRR) with complete photonic bandgaps. The two polarized states are separated far enough by resonant and nonresonant coupling between the waveguide modes and the microring modes. Some defect holes are utilized to control the beam propagation. The simulated results obtained by the finite-difference time-domain method show that high transmission (over 95%) is obtained and the polarization separation is realized with a length as short as 3.1 mu m. The design of the proposed PBS can be flexible, thanks to the advantages of PCRRs. (C) 2010 Optical Society of America
ISSN: 0003-6935