首 页 >> 通知公告
3.29-4.9全所SCI\CPCI论文已提交至SEMI-IR
[2010-04-13]
以下论文全文已提交至半导体所机构知识库SEMI-IR, 欢迎浏览、下载和引用:
Record 1 of 13
Author(s): Zhao, DG (Zhao, D. G.); Jiang, DS (Jiang, D. S.); Zhu, JJ (Zhu, J. J.); Wang, H (Wang, H.); Liu, ZS (Liu, Z. S.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, Hui)
Title: Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
Source: JOURNAL OF ALLOYS AND COMPOUNDS, 492 (1-2): 300-302 MAR 4 2010
Abstract: A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived. (C) 2009 Elsevier B.V. All rights reserved.
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2009.11.078

Record 2 of 13
Author(s): Li, J (Li, Jing); Yang, YD (Yang, Yue-De); Huang, YZ (Huang, Yong-Zhen)
Title: Mode Simulation for Midinfrared Microsquare Resonators With Sloped Sidewalls and Confined Metals
Source: IEEE PHOTONICS TECHNOLOGY LETTERS, 22 (7): 459-461 APR 1 2010
Abstract: Mode characteristics for midinfrared microsquare resonators with sloped sidewalls and confined metal layers are investigated by finite-difference time-domain (FDTD) techniques. For a microsquare with a side length of 10 mu m, the mode quality (Q)-factors of 8329, 4772, and 2053 are obtained for TM5,7 mode at wavelength 7.1 mu m by three-dimensional FDTD simulations, as the tilting angles of the side walls are 90 degrees, 88 degrees, and 86 degrees, respectively. Furthermore, microsquare resonators laterally surrounded by SiO2 and metal layers are investigated by the two-dimensional FDTD technique for the metal layers of Au, Ti-Au, Ag-Au, and Ti-Ag-Au, respectively.
ISSN: 1041-1135
DOI: 10.1109/LPT.2010.2040982

Record 3 of 13
Author(s): Yan, XZ (Yan, Xiaozhou); Kuang, XF (Kuang, Xiaofei); Wu, NJ (Wu, Nanjian)
Book Group Author(s): IEEE
Title: An Accurate and Fast Behavioral Model for PLL Frequency Synthesizer Phase Noise/Spurs Prediction
Source: PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE: 223-226 2009
Book series title: IEEE Custom Integrated Circuits Conference
Conference Title: IEEE Custom Integrated Circuits Conference
Conference Date: SEP 13-16, 2009
Conference Location: San Jose, CA
Abstract: This paper presents a behavior model for PLL Frequency Synthesizer. All the noise sources are modeled with noise voltages or currents in time-domain. An accurate VCO noise model is introduced, including both thermal noise and 1/f noise. The behavioral model can be co-simulated with transistor level circuits with fast speed and provides more accurate phase noise and spurs prediction. Comparison shows that simulation results match very well with measurement results.
ISBN: 978-1-4244-4072-6

Record 4 of 13
Author(s): Feng, P (Feng, Peng); Li, YL (Li, Yunlong); Wu, NJ (Wu, Nanjian)
Book Group Author(s): IEEE
Title: An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags
Source: PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE: 713-716 2009
Book series title: IEEE Custom Integrated Circuits Conference
Conference Title: IEEE Custom Integrated Circuits Conference
Conference Date: SEP 13-16, 2009
Conference Location: San Jose, CA
Abstract: An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range. In the charge pump circuit the threshold voltage effect of the switch transistor is almost eliminated and the pumping efficiency of the circuit is improved. An ultra low power 192-bit memory with a register array is implemented in a 0.18 mu M standard CMOS process. The measured results indicate that, for the supply voltage of 1.2 volts and the clock frequency of 780KHz, the current consumption of the memory is 1.8 mu A (3.6 mu A) at the read (write) rate of 1.3Mb/s (0.8Kb/s).
ISBN: 978-1-4244-4072-6

Record 5 of 13
Author(s): Li, YJ (Li, Yuan-Jin); Zhang, WC (Zhang, WanCheng); Wu, NJ (Wu, Nan-Jian)
Editor(s): Tang, TA; Zeng, XY; Chen, Y; Yu, HH
Title: A Novel Architecture of Vision Chip for Fast Traffic Lane Detection and FPGA Implementation
Source: 2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS: 917-920 2009
Conference Title: IEEE 8th International Conference on ASIC
Conference Date: OCT 20-23, 2009
Conference Location: Changsha, PEOPLES R CHINA
Abstract: This paper presents a novel architecture of vision chip for fast traffic lane detection (FTLD). The architecture consists of a 32*32 SIMD processing element (PE) array processor and a dual-core RISC processor. The PE array processor performs low-level pixel-parallel image processing at high speed and outputs image features for high-level image processing without I/O bottleneck. The dual-core processor carries out high-level image processing. A parallel fast lane detection algorithm for this architecture is developed. The FPGA system with a CMOS image sensor is used to implement the architecture. Experiment results show that the system can perform the fast traffic lane detection at 50fps rate. It is much faster than previous works and has good robustness that can operate in various intensity of light. The novel architecture of vision chip is able to meet the demand of real-time lane departure warning system.
ISBN: 978-1-4244-3868-6

Record 6 of 13
Author(s): Lou, WF (Lou, Wenfeng); Yan, XZ (Yan, Xiaozhou); Geng, ZQ (Geng, Zhiqing); Wu, NJ (Wu, Nanjian)
Editor(s): Tang, TA; Zeng, XY; Chen, Y; Yu, HH
Title: A Novel 0.72-6.2GHz Continuously-Tunable Delta Sigma Fractional-N Frequency Synthesizer
Source: 2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS: 1085-1088 2009
Conference Title: IEEE 8th International Conference on ASIC
Conference Date: OCT 20-23, 2009
Conference Location: Changsha, PEOPLES R CHINA
Abstract: This paper presents a wideband Delta Sigma-based fractional-N synthesizer with three integrated quadrature VCOs for multiple-input multiple-output (MIMO) wireless communication applications. It continuously covers a wide range frequency from 0.72GHz to 6.2GHz that is suitable for multiple communication standards. The synthesizer is designed in 0.13-um RE CMOS process. The dual clock full differential multi-modulus divide (MMD) with low power consumption can operate over 9GHz under the worst condition. In the whole range frequency from 0.72GHz to 6.2GHz, the maximal tuning range of the QVCOs reaches 33.09% and their phase noise is -119d8/Hz similar to 124d8/Hz @1MHz. Its current is less than 12mA at a 1.2V voltage supply when it operates at the highest frequency of 6.2GHz.
ISBN: 978-1-4244-3868-6

Record 7 of 13
Author(s): Jian, HF (Jian, Haifang); Yi, Y (Yi, Yong); Shi, Y (Shi, Yin)
Book Group Author(s): IEEE
Title: A Simplified Soft-output QRD-M MIMO Detector
Source: 2009 5TH INTERNATIONAL CONFERENCE ON WIRELESS COMMUNICATIONS, NETWORKING AND MOBILE COMPUTING, VOLS 1-8: 929-932 2009
Conference Title: 5th International Conference on Wireless Communications, Networking and Mobile Computing
Conference Date: SEP 24-26, 2009
Conference Location: Beijing, PEOPLES R CHINA
Abstract: In this paper, a low-complexity soft-output QRD-M detection algorithm is proposed for high-throughput Multiple-input multiple-output (MIMO) systems. By employing novel expansion on demand and distributed sorting scheme, the proposed algorithm can reduce 70% and 85% foundational operations for 16-QAM and 64-QAM respectively compared to the conventional QRD-M algorithm. Furthermore, the proposed algorithm can yield soft information to improve the bit error rate (BER) performance. Simulation results show that the proposed algorithm can achieve a near-NIL detection performance with less foundational operations.
ISBN: 978-1-4244-3692-7

Record 8 of 13
Author(s): Shi, LJ (Shi, Li-Jie)
Title: First-principles prediction of the magnetism of 3d transition-metal-doped Rocksalt MgO
Source: PHYSICS LETTERS A, 374 (10): 1292-1296 FEB 22 2010
Abstract: Using first-principles band structure methods, we have systematically studied the electronic structures, magnetic stabilities, and half-metal properties of 3d transition-metal (TM) doped Rocksalt MgO compounds TMMg3O4 (TM = V, Cr, Mn, Fe, Co, and Ni). The calculations reveal that only CrMg3O4 has a ferromagnetic stability among the six compounds, which is explained by double-exchange mechanism. The magnetic stability is affected by the doping concentration of TM if the top valance band is composed of partially occupied t(2g) states. In addition, CrMg3O4 is a half-metallic ferromagnet. The origins of half-metallic and ferromagnetic properties are explored. The Curie temperature (T-c) of CrMg3O4 is 182 K. And it is hard for CrMg3O4 to deform due to the large bulk modulus and shear modulus, so it is a promising spintronic material. Our calculations provide the first available information on the magnetic properties of 3d TM-doped MgO. (C) 2010 Published by Elsevier B.V.
ISSN: 0375-9601
DOI: 10.1016/j.physleta.2010.01.010

Record 9 of 13
Author(s): Ke, JH (Ke, Jian Hong); Zhu, NH (Zhu, Ning Hua); Zhang, HG (Zhang, Hong Guang); Man, JW (Man, Jiang Wei); Zhao, LJ (Zhao, Ling Juan); Chen, W (Chen, Wei); Wang, X (Wang, Xin); Liu, Y (Liu, Yu); Yuan, HQ (Yuan, Hai Qing); Xie, L (Xie, Liang); Wang, W (Wang, Wei)
Title: FREQUENCY AND TEMPORAL COHERENCE PROPERTIES OF DISTRIBUTED BRAGG REFLECTOR LASER
Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 52 (4): 822-825 APR 2010
Abstract: This article presents the investigation of frequency and temporal coherence properties of distributed Bragg reflector laser. In this scheme, a square-wavefrom voltage is applied to the phase section of the laser to little optical wavelength, and delayed optical heterodyne technique is used for the analysis of spectral characteristics. Experiments show that lightwaves emitted from the same active region asynchronously are partially frequency and temporal coherent. When the two wavelengths are closer, the two waves are strong v coherent, and the coherence properties get weak as the delay v time increases. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Left 52: 822-825, 2010 Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25031
ISSN: 0895-2477
DOI: 10.1002/mop.25031

Record 10 of 13
Author(s): Zhu, NH (Zhu, Ning Hua); Ke, JH (Ke, Jian Hong); Zhang, HG (Zhang, Hong Guang); Chen, W (Chen, Wei); Liu, JG (Liu, Jian Guo); Zhao, LJ (Zhao, Ling Juan); Wang, W (Wang, Wei)
Title: Wavelength Coded Optical Time-Domain Reflectometry
Source: JOURNAL OF LIGHTWAVE TECHNOLOGY, 28 (6): 972-977 MAR 15 2010
Abstract: This paper presents a wavelength coded optical timedomain reflectometry based on optical heterodyne technique. In this scheme, the probe and reference optical pulses have different wavelengths. This enables optical heterodyne detection to be used to improve the system performances significantly. We demonstrate a spatial resolution of 2.5 m within a range of 60 km in weak-reflection signal detection and direct observation of Brillouin scattering over a long optical fiber, suggesting online fiber sensing possible. The principle of wavelength coding is applicable to other systems like lidar and radar to increase receiver sensitivity and simplify system structure.
ISSN: 0733-8724
DOI: 10.1109/JLT.2009.2039853

Record 11 of 13
Author(s): Deng, HX (Deng, Hui-Xiong); Li, SS (Li, Shu-Shen); Li, JB (Li, Jingbo)
Title: Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots
Source: JOURNAL OF PHYSICAL CHEMISTRY C, 114 (11): 4841-4845 MAR 25 2010
Abstract: On the basis of the density functional theory (DFT) within local density approximations (LDA) approach, we calculate the band gaps for different size SnO2 quantum wire (QWs) and quantum dots (QDs). A model is proposed to passivate the surface atoms of SnO2 QWs and QDs. We find that the band gap increases between QWs and bulk evolve as Delta E-g(wire) = 1.74/d(1.20) as the effective diameter d decreases, while being Delta E-g(dot) = 2.84/d(1.26) for the QDs. Though the similar to d(1.2) scale is significantly different from similar to d(2) of the effective mass result, the ratio of band gap increases between SnO2 QWs and QDs is 0.609, very close to the effective mass prediction. We also confirm, although the LDS calculations underestimate the band gap, that they give the trend of band gap shift as much as that obtained by the hybrid functional (PBE0) with a rational mixing of 25% Fock exchange and 75% of the conventional Perdew-Burke-Ernzerhof (PBE) exchange functional for the SnO2 QWs and QDs. The relative deviation of the LDA calculated band gap difference Lambda E-g compared with the corresponding PBE0 results is only within 5%. Additionally, it is found the states of valence band maximum (VBM) and conduction band minimum (CBM) of SnO2 QWs or QDs have a mostly p- and s-like envelope function symmetry, respectively, from both LDA and PBE0 calculations.
ISSN: 1932-7447
DOI: 10.1021/jp911035z

Record 12 of 13
Author(s): Wu, YX (Wu Yu-Xin); Zhu, JJ (Zhu Jian-Jun); Chen, GF (Chen Gui-Feng); Zhang, SM (Zhang Shu-Ming); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu Zong-Shun); Zhao, DG (Zhao De-Gang); Wang, H (Wang Hui); Wang, YT (Wang Yu-Tian); Yang, H (Yang Hui)
Title: Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
Source: CHINESE PHYSICS B, 19 (3): Art. No. 036801 MAR 2010
Abstract: We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.
ISSN: 1674-1056
Article Number: 036801
DOI: 10.1088/1674-1056/19/3/036801

Record 13 of 13
Author(s): Wang, ZG (Wang, Zhiguo); Li, JB (Li, Jingbo); Gao, F (Gao, Fei); Weber, WJ (Weber, William J.)
Title: Codoping of magnesium with oxygen in gallium nitride nanowires
Source: APPLIED PHYSICS LETTERS, 96 (10): Art. No. 103112 MAR 8 2010
Abstract: Codoping of p-type GaN nanowires with Mg and oxygen was investigated using first-principles calculations. The Mg becomes a deep acceptor in GaN nanowires with high ionization energy due to the quantum confinement. The ionization energy of Mg doped GaN nanowires containing passivated Mg-O complex decreases with increasing the diameter, and reduces to 300 meV as the diameter of the GaN nanowire is larger than 2.01 nm, which indicates that Mg-O codoping is suitable for achieving p-type GaN nanowires with larger diameters. The codoping method to reduce the ionization energy can be effectively used in other semiconductor nanostructures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3318462]
ISSN: 0003-6951
Article Number: 103112
DOI: 10.1063/1.3318462