| Record 1 of 7 |
| Author(s): Song, HP (Song, H. P.); Zheng, GL (Zheng, G. L.); Yang, AL (Yang, A. L.); Guo, Y (Guo, Y.); Wei, HY (Wei, H. Y.); Li, CM (Li, C. M.); Yang, SY (Yang, S. Y.); Liu, XL (Liu, X. L.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.) |
| Title: The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy |
| Source: SOLID STATE COMMUNICATIONS, 150 (41-42): 1991-1994 NOV 2010 |
| Abstract: Both In2O3 and ZnO are potential oxide semiconductor materials for optoelectronics devices. Semi-polar (101) plane wurtzite (w-)ZnO films were grown on bcc-In2O3(111) by metal organic chemical vapor deposition and the epitaxial relation is w-ZnO(101) parallel to bcc-In2O3(111). We have measured the valence band offset (VBO) of w-ZnO(101)/bcc-In2O3(111) heterojunction to settle the question of the band line-up of the ZnO/In2O3 heterojunction. Our result shows that the valence band maximum (VBM) of ZnO(101) lies similar to 0.49 eV below the VBM of bcc-In2O3(111), and the conduction band maximum (CBM) of w-ZnO(101) is about 0.05 eV lower than the CBM of bcc-In2O3 (111), which shows that their CBMs are nearly at the same level. (c) 2010 Elsevier Ltd. All rights reserved. |
| ISSN: 0038-1098 |
| DOI: 10.1016/j.ssc.2010.08.022 |
| Record 2 of 7 |
| Author(s): Xiong, KL (Xiong, Kanglin); Lu, SL (Lu, Shulong); Zhou, TF (Zhou, Taofei); Jiang, DS (Jiang, Desheng); Wang, RX (Wang, Rongxin); Qiu, K (Qiu, Kai); Dong, JR (Dong, Jianrong); Yang, H (Yang, Hui) |
| Title: Internal quantum efficiency analysis of solar cell by genetic algorithm |
| Source: SOLAR ENERGY, 84 (11): 1888-1891 NOV 2010 |
| Abstract: To investigate factors limiting the performance of a GaAs solar cell, genetic algorithm is employed to fit the experimentally measured internal quantum efficiency (IQE) in the full spectra range. The device parameters such as diffusion lengths and surface recombination velocities are extracted. Electron beam induced current (EBIC) is performed in the base region of the cell with obtained diffusion length agreeing with the fit result. The advantage of genetic algorithm is illustrated. (C) 2010 Elsevier Ltd. All rights reserved. |
| ISSN: 0038-092X |
| DOI: 10.1016/j.solener.2010.05.013 |
| Record 3 of 7 |
| Author(s): Qi, QO (Qi, Qiong); Yu, AF (Yu, Aifang); Wang, LM (Wang, Liangmin); Jiang, C (Jiang, Chao) |
| Title: Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor |
| Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10 (11): 7103-7107 Sp. Iss. SI NOV 2010 |
| Conference Title: International Conference on Nanoscience and Technology (ChinaNANO 2009) |
| Conference Date: SEP 01-03, 2009 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Conference Host: Natl Ctr Nanosci Tech (NCNST) |
| Abstract: The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy. |
| ISSN: 1533-4880 |
| DOI: 10.1166/jnn.2010.2802 |
| Record 4 of 7 |
| Author(s): Zhang, YB (Zhang, Yanbo); Xiong, Y (Xiong, Ying); Yang, XA (Yang, Xiang); Wang, Y (Wang, Ying); Han, WH (Han, Weihua); Yang, FH (Yang, Fuhua) |
| Title: Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors |
| Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10 (11): 7113-7116 Sp. Iss. SI NOV 2010 |
| Conference Title: International Conference on Nanoscience and Technology (ChinaNANO 2009) |
| Conference Date: SEP 01-03, 2009 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Conference Host: Natl Ctr Nanosci Tech (NCNST) |
| Abstract: SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires. |
| ISSN: 1533-4880 |
| DOI: 10.1166/jnn.2010.2811 |
| Record 5 of 7 |
| Author(s): Lin, F (Lin, Feng); Fang, ZY (Fang, Zheyu); Qu, SC (Qu, Shengchun); Huang, S (Huang, Shan); Song, WT (Song, Wentao); Chi, LF (Chi, Lifeng); Zhu, X (Zhu, Xing) |
| Title: Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110) |
| Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10 (11): 7162-7166 Sp. Iss. SI NOV 2010 |
| Conference Title: International Conference on Nanoscience and Technology (ChinaNANO 2009) |
| Conference Date: SEP 01-03, 2009 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Conference Host: Natl Ctr Nanosci Tech (NCNST) |
| Abstract: The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer. |
| ISSN: 1533-4880 |
| DOI: 10.1166/jnn.2010.2889 |
| Record 6 of 7 |
| Author(s): Bai, AQ (Bai, Anqi); Cheng, BW (Cheng, Buwen); Wang, XF (Wang, Xiaofeng); Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Wang, QM (Wang, Qiming) |
| Title: Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation |
| Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10 (11): 7428-7431 Sp. Iss. SI NOV 2010 |
| Conference Title: International Conference on Nanoscience and Technology (ChinaNANO 2009) |
| Conference Date: SEP 01-03, 2009 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Conference Host: Natl Ctr Nanosci Tech (NCNST) |
| Abstract: A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100 similar to 200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current voltage (I-V) curves revealed the contact properties. After annealing in N-2 at 700 degrees C, good linear property was shown with contact resistance of 33 Omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields. |
| ISSN: 1533-4880 |
| DOI: 10.1166/jnn.2010.2845 |
| Record 7 of 7 |
| Author(s): Zhang, YJ (Zhang, Y. J.); Shi, HL (Shi, H. -L.); Wang, SX (Wang, S. X.); Zhang, P (Zhang, P.); Li, RW (Li, R. W.) |
| Title: Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations |
| Source: EUROPEAN PHYSICAL JOURNAL B, 77 (3): 345-349 OCT 2010 |
| Abstract: In this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al14Gd2N16 with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices. |
| ISSN: 1434-6028 |
| DOI: 10.1140/epjb/e2010-00273-4 |
|
