Record 1 of 21

Author(s): Li, DF (Li, Dafang); Liu, HY (Liu, Hanyu); Wang, BT (Wang, Baotian); Shi, HL (Shi, Hongliang); Zhu, SP (Zhu, Shaoping); Yan, J (Yan, Jun); Zhang, P (Zhang, Ping)

Title: Anomalous optical and electronic properties of dense sodium

Source: PHYSICS LETTERS A, 374 (43): 4458-4464 SEP 27 2010

Abstract: Based on the density functional theory, we systematically study the optical and electronic properties of the insulating dense sodium phase (Na-hp4) reported recently (Ma et al., 2009). The structure is found optically anisotropic. Through Bader analysis, we conclude that ionicity exists in the structure and becomes stronger with increasing pressure. (C) 2010 Elsevier B.V. All rights reserved.

ISSN: 0375-9601

DOI: 10.1016/j.physleta.2010.08.079

Record 2 of 21

Author(s): Zhang, SB (Zhang, Sh B.); Cui, QJ (Cui, Q. J.); Xiong, B (Xiong, B.); Guo, L (Guo, L.); Hou, W (Hou, W.); Lin, XC (Lin, X. C.); Li, JM (Li, J. M.)

Title: High electrical-to-green efficiency high stability intracavity-frequency-doubled Nd:YAG-LBO QCW 532 nm laser with a straight cavity

Source: LASER PHYSICS LETTERS, 7 (10): 707-710 OCT 2010

Abstract: An electrical-to-green efficiency of more than 10% was demonstrated by intracavity-frequency-doubling a Q-switched diode-side-pumped Nd:YAG laser with a type II lithium triborate (LBO) crystal in a straight plano-concave cavity. An average power of 69.2 W at 532 nm was generated when electrical input power was 666 W. The corresponding electrical-to-green conversion efficiency is 10.4%. To the best of our knowledge, this is the highest electrical-to-green efficiency of second harmonic generation laser systems with side-pumped laser modules, ever reported. At about 66 W of green output power, the power fluctuation over 4 hours was better than +/-0.86%.
[GRAPHICS]
(C) 2010 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA

ISSN: 1612-2011

DOI: 10.1002/lapl.201010050

Record 3 of 21

Author(s): Sun, L (Sun, L.); Zhang, L (Zhang, L.); Yu, HJ (Yu, H. J.); Guo, L (Guo, L.); Ma, JL (Ma, J. L.); Zhang, J (Zhang, J.); Hou, W (Hou, W.); Lin, XC (Lin, X. C.); Li, JM (Li, J. M.)

Title: 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on SESAM

Source: LASER PHYSICS LETTERS, 7 (10): 711-714 OCT 2010

Abstract: We report on an 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on a semiconductor saturable absorber mirror (SESAM) for the first time. When the incident pump power was 16 W, 4.76 W average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. The repetition rate of mode-locked pulse was 80 MHz with 25 ps pulse width. The maximum pulse energy and peak power were 60 nJ and 2.4 kW, respectively.
[GRAPHICS]
(C) 2010 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA

ISSN: 1612-2011

DOI: 10.1002/lapl.201010051

Record 4 of 21

Author(s): Bonaccorso, F (Bonaccorso, F.); Hasan, T (Hasan, T.); Tan, PH (Tan, P. H.); Sciascia, C (Sciascia, C.); Privitera, G (Privitera, G.); Di Marco, G (Di Marco, G.); Gucciardi, PG (Gucciardi, P. G.); Ferrari, AC (Ferrari, A. C.)

Title: Density Gradient Ultracentrifugation of Nanotubes: Interplay of Bundling and Surfactants Encapsulation

Source: JOURNAL OF PHYSICAL CHEMISTRY C, 114 (41): 17267-17285 OCT 21 2010

Abstract: Density gradient ultracentrifugation (DGU) has emerged as a promising tool to prepare chirality enriched nanotube samples. Here, we assess the performance of different surfactants for DGU. Bile salts (e.g., sodium cholate (SC), sodium deoxycholate (SDC), and sodium taurodeoxycholate (TDC)) are more effective in individualizing Single Wall Carbon Nanotubes (SWNTs) compared to linear chain surfactants (e.g., sodium dodecylbenzene sulfonate (SDBS) and sodium dodecylsulfate (SDS)) and better suited for DGU. Using SC, a narrower diameter distribution (0.69-0.81 nm) is achieved through a single DGU step on CoMoCAT tubes, when compared to SDC and TDC (0.69-0.89 nm). No selectivity is obtained using SDBS. due to its ineffectiveness in debundling. We assign the reduce selectivity of dihydroxy bile salts (S DC and TDC) in comparison with trihydroxy SC to the formation of secondary micelles. This is determined by the number and position of hydroxyl ( OH) groups on the a-side of the steroid backbone. We also enrich CoMoCAT SWNT in the 0.84-0.92 nm range using the Pluronic F98 triblock copolymer. Mixtures of bile salts (SC) and linear chain surfactants (SOS) are used to enrich metallic and semiconducting laser-ablation grown SWNTs. We demonstrate enrichment of a single chirality, (6,5), combining diameter and metallic versus semiconductillg separation on CoMoCAT samples.

ISSN: 1932-7447

DOI: 10.1021/jp1030174

Record 5 of 21

Author(s): Meng, XQ (Meng, Xiuqing); Tang, LM (Tang, Liming); Li, JB (Li, Jingbo)

Title: Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals

Source: JOURNAL OF PHYSICAL CHEMISTRY C, 114 (41): 17569-17573 OCT 21 2010

Abstract: Co-doped In2O3 nanocrystals showing room-temperature ferromagnetism have been successfully prepared by a simple sol-gel synthesis route. The sample displays it clear ferromagnetism behavior above 300 K. Phase and structure analyses reveal that the nanocrystals are crystallized with Co ions substituted for In ions in the In2O3 matrix, and no trace of secondary phases or clusters is detected. The experimental results are explained theoretically by first-principles calculations based on density functional theory, which indicate that the native ferromagnetic behavior of Co-doped In2O3 could be mainly ascribed to the strong d-d coupling of the magnetic ions.

ISSN: 1932-7447

DOI: 10.1021/jp106767n

Record 6 of 21

Author(s): Zhai, Y (Zhai Yao); Chen, SW (Chen Shao-Wu); Ren, GH (Ren Guang-Hui)

Title: On-Chip All-Optical Passive 3.55 Gbit/s NRZ-to-PRZ Format Conversion Using a High-Q Silicon-Based Microring Resonator

Source: CHINESE PHYSICS LETTERS, 27 (10): Art. No. 104203 OCT 2010

Abstract: We report the experimental result of all-optical passive 3.55 Gbit/s non-return-to-zero (NRZ) to pseudo-return-to-zero (PRZ) format conversion using a high-quality-factor (Q-factor) silicon-based microring resonator notch filter on chip. The silicon-based microring resonator has 23800 Q-factor and 22 dB extinction ratio (ER), and the PRZ signals has about 108 ps width and 4.98 dB ER.

ISSN: 0256-307X

Article Number: 104203

DOI: 10.1088/0256-307X/27/10/104203

Record 7 of 21

Author(s): Li, W (Li Wei); Zhu, NH (Zhu Ning-Hua); Wang, LX (Wang Li-Xian); Liu, JG (Liu Jian-Guo); Qi, XQ (Qi Xiao-Qiong); Xie, LA (Xie Liang)

Title: Harmonic Millimeter Wave Generation and Frequency Up-Conversion Using Optical Injection Locking and Brillouin Selective Sideband Amplification

Source: CHINESE PHYSICS LETTERS, 27 (10): Art. No. 104204 OCT 2010

Abstract: Harmonic millimeter wave (mm-wave) generation and frequency up-conversion are experimentally demonstrated using optical injection locking and Brillouin selective sideband amplification (BSSA) induced by stimulated Brillouin scattering in a 10-km single-mode fiber. By using this method, we successfully generate third-harmonic mm-wave at 27 GHz (f(LO) - 9 GHz) with single sideband (SSB) modulation and up-convert the 2GHz intermediate frequency signal into the mm-wave band with single mode modulation of the SSB modes. In addition, the mm-wave carrier obtains more than 23 dB power gain due to the BSSA. The transmission experiments show that the generated mm-wave and up-converted signals indicate strong immunity against the chromatic dispersion of the fibers.

ISSN: 0256-307X

Article Number: 104204

DOI: 10.1088/0256-307X/27/10/104204

Record 8 of 21

Author(s): Liu, JQ (Liu Jun-Qi); Chen, JY (Chen Jian-Yan); Liu, FQ (Liu Feng-Qi); Li, L (Li Lu); Wang, LJ (Wang Li-Jun); Wang, ZG (Wang Zhan-Guo)

Title: Terahertz Quantum Cascade Laser Operating at 2.94 THz

Source: CHINESE PHYSICS LETTERS, 27 (10): Art. No. 104205 OCT 2010

Abstract: The development of quantum cascade laser at 2.94 THz is reported. The laser structure is based on a bound-to-continuum active region and a semi-insulating surface-plasmon waveguide. Lasing is observed up to a heat-sink temperature of 70 K in pulsed mode with light power of 4.75 mW at 10 K and 1 mW at 70 K. A threshold current density of 296.5 A/cm(2) and an internal quantum efficiency of 1.57 x 10(-2) per cascade period are also observed at 10 K. The characteristic temperature of this laser is extracted to be T-0 = 57.5 K.

ISSN: 0256-307X

Article Number: 104205

DOI: 10.1088/0256-307X/27/10/104205

Record 9 of 21

Author(s): Cao, LX (Cao Li-Xin); Zhang, FX (Zhang Feng-Xin); Zhu, YF (Zhu Yin-Fang); Yang, JL (Yang Jin-Ling)

Title: Ultrasensitive Detection of Infrared Photon Using Microcantilever: Theoretical Analysis

Source: CHINESE PHYSICS LETTERS, 27 (10): Art. No. 108501 OCT 2010

Abstract: We present a new method for detecting near-infrared, mid-infrared, and far-infrared photons with an ultra-high sensitivity. The infrared photon detection was carried out by monitoring the displacement change of a vibrating microcantilever under light pressure using a laser Doppler vibrometer. Ultrathin silicon cantilevers with high sensitivity were produced using micro/nano-fabrication technology. The photon detection system was set up. The response of the microcantilever to the photon illumination is theoretically estimated, and a nanowatt resolution for the infrared photon detection is expected at room temperature with this method.

ISSN: 0256-307X

Article Number: 108501

DOI: 10.1088/0256-307X/27/10/108501

Record 10 of 21

Author(s): Chen, X (Chen Xi); Zhong, YA (Zhong Yuan); Wang, Q (Wang Qing); Zhang, YJ (Zhang Ye-Jin); Chen, LH (Chen Liang-Hui)

Title: Study on tapered crossed subwavelength gratings by Fourier modal method

Source: CHINESE PHYSICS B, 19 (10): Art. No. 104101 OCT 2010

Abstract: Fourier modal method incorporating staircase approximation is used to study tapered crossed subwavelength gratings in this paper. Three intuitive formulations of eigenvalue functions originating from the prototype are presented, and their convergences are compared through numerical calculation. One of them is found to be suitable in modeling the diffraction efficiency of the circular tapered crossed subwavelength gratings without high absorption, and staircase approximation is further proven valid for non-highly-absorption tapered gratings. This approach is used to simulate the "moth-eye" antireflection surface on silicon, and the numerical result agrees well with the experimental one.

ISSN: 1674-1056

Article Number: 104101

DOI: 10.1088/1674-1056/19/10/104101

Record 11 of 21

Author(s): Tang, HM (Tang Hai-Ma); Zheng, ZS (Zheng Zhong-Shan); Zhang, EX (Zhang En-Xia); Yu, F (Yu Fang); Li, N (Li Ning); Wang, NJ (Wang Ning-Juan)

Title: Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

Source: CHINESE PHYSICS B, 19 (10): Art. No. 106106 OCT 2010

Abstract: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

ISSN: 1674-1056

Article Number: 106106

DOI: 10.1088/1674-1056/19/10/106106

Record 12 of 21

Author(s): Guo, X (Guo Xi); Wang, H (Wang Hui); Jiang, DS (Jiang De-Sheng); Wang, YT (Wang Yu-Tian); Zhao, DG (Zhao De-Gang); Zhu, JJ (Zhu Jian-Jun); Liu, ZS (Liu Zong-Shun); Zhang, SM (Zhang Shu-Ming); Yang, H (Yang Hui)

Title: Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

Source: CHINESE PHYSICS B, 19 (10): Art. No. 106802 OCT 2010

Abstract: The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

ISSN: 1674-1056

Article Number: 106802

DOI: 10.1088/1674-1056/19/10/106802

Record 13 of 21

Author(s): Zhang, XY (Zhang, Xinyu); Li, H (Li, Hui); Liu, K (Liu, Kan); Luo, J (Luo, Jun); Xie, CS (Xie, Changsheng); Ji, A (Ji, An); Zhang, TX (Zhang, Tianxu)

Title: Diffractive microlens with a cascade focal plane fabricated by single mask UV-photolithography and common KOH:H2O etching

Source: JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 20 (10): Art. No. 105029 OCT 2010

Abstract: A diffractive microlens with a cascade focal plane along the main optical axis of the device is fabricated using a low-cost technique mainly including single mask ultraviolet (UV) photolithography and dual-step KOH:H2O etching. Based on the evolutionary behavior of converse pyramid-shaped microholes (CPSMs) preshaped over a {100}-oriented silicon wafer in KOH etchant, the first-step KOH etching is performed to transfer initial square micro-openings in a SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD) and patterned by single mask UV-photolithography, into CPSMs with needed dimension. After completely removing a thinned SiO2 mask, basic annular phase steps with a relatively steep sidewall and scheduled height can be shaped in the overlapped etching region between the neighboring silicon concave-arc microstructures evolved from CPSMs through the second-step KOH etching. Morphological measurements demonstrate a desirable surface of the silicon microlens with a roughness in nanometer scale and the feature height of the phase steps formed in the submicrometer range. Conventional optics measurements of the plastic diffractive microlens obtained by further hot embossing the fine microrelief phase map over the nickel mask made through a common electrochemical method indicate a highly efficient cascaded focusing performance.

ISSN: 0960-1317

Article Number: 105029

DOI: 10.1088/0960-1317/20/10/105029

Record 14 of 21

Author(s): Liu, DY (Liu, Duan-Yang); Xia, JB (Xia, Jian-Bai)

Title: Rashba electron's ballistic transport in two-dimensional quantum waveguide

Source: JOURNAL OF APPLIED PHYSICS, 108 (5): Art. No. 053717 SEP 1 2010

Abstract: The ballistic transport of Rashba electrons in a straight structure in two-dimensional electron gas is studied. It is found that there is no mixing between the wave functions of spin up and spin down states, and the transfer matrix is independent for the spin in every interface. The influence of the structure and Rashba coefficient on the electron transport is investigated. Our results indicate that the transmission probabilities are independent of the sign and magnitude of the Rashba coefficient and it depends on the shape of the structure, especially the stub width. The antiresonance is found, where the quasiconfined state is formed in the center part of the structure. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3475370]

ISSN: 0021-8979

Article Number: 053717

DOI: 10.1063/1.3475370

Record 15 of 21

Author(s): Zhai, F (Zhai, Feng); Zhao, XF (Zhao, Xiaofang); Chang, K (Chang, Kai); Xu, HQ (Xu, H. Q.)

Title: Magnetic barrier on strained graphene: A possible valley filter

Source: PHYSICAL REVIEW B, 82 (11): Art. No. 115442 SEP 23 2010

Abstract: We put forward a two-terminal valley filter based on a bulk graphene sheet under the modulations of both a local perpendicular magnetic field and a substrate strain. When only one of the two modulations is present, no valley polarization can be generated. A combination of the two modulations leads to a different (but not opposite) shifts of the K and K' valleys, which could be utilized to generate a valley-polarized current. The degree of the valley polarization can be tuned by the strain strength and the inclusion of a scalar potential. The valley polarization changes its polarity as the local magnetic field switches its direction.

ISSN: 1098-0121

Article Number: 115442

DOI: 10.1103/PhysRevB.82.115442

Record 16 of 21

Author(s): Wu, ZH (Wu, Zhenhua); Peeters, FM (Peeters, F. M.); Chang, K (Chang, Kai)

Title: Electron tunneling through double magnetic barriers on the surface of a topological insulator

Source: PHYSICAL REVIEW B, 82 (11): Art. No. 115211 SEP 24 2010

Abstract: We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.

ISSN: 1098-0121

Article Number: 115211

DOI: 10.1103/PhysRevB.82.115211

Record 17 of 21

Author(s): Xue, HY (Xue, Hai-Yun); Xue, CL (Xue, Chun-Lai); Cheng, BW (Cheng, Bu-Wen); Yu, YD (Yu, Yu-De); Wang, QM (Wang, Qi-Ming)

Title: High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

Source: IEEE ELECTRON DEVICE LETTERS, 31 (7): 701-703 JUL 2010

Abstract: Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

ISSN: 0741-3106

DOI: 10.1109/LED.2010.2048997

Record 18 of 21

Author(s): Chen, JY (Chen, J. Y.); Liu, JQ (Liu, J. Q.); Liu, FQ (Liu, F. Q.); Li, L (Li, L.); Wang, LJ (Wang, L. J.); Wang, ZG (Wang, Z. G.)

Title: Distributed feedback terahertz quantum cascade lasers with complex-coupled metallic gratings

Source: ELECTRONICS LETTERS, 46 (19): 1340-1341 SEP 16 2010

Abstract: The singlemode operation of a distributed feedback terahertz quantum cascade laser with complex-coupled metallic relief gratings emitting at 3.09 THz (lambda = 97.07 mu m) is reported. The side-mode suppression ratio is about 20 dB at all operating temperatures. The highest working temperature of up to 88 K is obtained, with the optical power of 10 mW at 10 K and 1 mW at 88 K.

ISSN: 0013-5194

DOI: 10.1049/el.2010.2223

Record 19 of 21

Author(s): Liu, DY (Liu DuanYang); Xia, JB (Xia JianBai); Chang, YC (Chang YiaChung)

Editor(s): Chu, PKI

Title: Rashba electron transport in 1D quantum waveguides

Source: INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2: 26-26 2010

Conference Title: 3rd IEEE International Nanoelectronics Conference

Conference Date: JAN 03-08, 2010

Conference Location: Hong Kong, PEOPLES R CHINA

Conference Host: City Univ Hong Kong

ISBN: 978-1-4244-3543-2

Record 20 of 21

Author(s): Jin, P (Jin, P.); Lv, XQ (Lv, X. Q.); Liu, N (Liu, N.); Zhang, ZY (Zhang, Z. Y.); Wang, ZG (Wang, Z. G.)

Editor(s): Chu, PKI

Title: Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices

Source: INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2: 304-305 2010

Conference Title: 3rd IEEE International Nanoelectronics Conference

Conference Date: JAN 03-08, 2010

Conference Location: Hong Kong, PEOPLES R CHINA

Conference Host: City Univ Hong Kong

Abstract: Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs) and external cavity tunable QD laser have been studied. By optimizing growth parameters and sample structure of In As QDs, up to 150-nm photoluminescence width is achieved. High-power In As/GaAs QD-SLDs with the CW output power of 200 mW and the spectral bandwidth of near 60 nm have been obtained at room temperature. In addition, broadband emitting In As/GaAs QD-SLDs are fabricated. The device exhibits properties of 110 nm bandwidth with the centre of 1.1 mu m and above 30 mW output under pulsing injection at room temperature. By using InAs/AlGaAs QDs as active layers, we get SLDs with 142 nm spectral width. Broadband external cavity tunable laser has been constructed by using broad-emitting spectral In As/GaAs QD gain device. Leaving the facets uncoated, a tuning range of 110 nm, which covers the ground state and the first excited state of the QDs, is realized. By the anti-reflectance coating on one facet, which is coupled with the grating, the tuning bandwidth is expanded to near 150 nm. The ground state, the first and second excited states of the QDs contribute to the broad tuning range.

ISBN: 978-1-4244-3543-2

Record 21 of 21

Author(s): Gao, Y (Gao, Y.); Zhang, XW (Zhang, X. W.); Qu, S (Qu, S.); You, JB (You, J. B.); Yin, ZG (Yin, Z. G.); Chen, NF (Chen, N. F.)

Editor(s): Chu, PKI

Title: Ordered FePt Nanoparticle Arrays Prepared by a Micellar Method

Source: INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2: 1234-1235 2010

Conference Title: 3rd IEEE International Nanoelectronics Conference

Conference Date: JAN 03-08, 2010

Conference Location: Hong Kong, PEOPLES R CHINA

Conference Host: City Univ Hong Kong

Abstract: We prepared L1(0) phase FePt nanoparticle arrays on Si by a micellar method combined with plasma treatment, in-situ deposition of a Sio(2) overlayer, and a post-annealing. The FePt nanoparticle arrays exhibit a quasi-hexagonal order with tailored inter-particle spacing and particle size. Transformation of L1(0) FePt was achieved for the annealed samples. In addition, the ordering temperature of FePt nanoparticles was reduced by 50 similar to 100 degrees C by Au or Ag doping. The micellar method has a high potential in preparing FePt nanoparticle arrays used for ultrahigh density recording media.

ISBN: 978-1-4244-3543-2