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| Record 1 of 8 |
| Author(s): Khazen, K (Khazen, Kh.); von Bardeleben, HJ (von Bardeleben, H. J.); Cantin, JL (Cantin, J. L.); Mauger, A (Mauger, A.); Chen, L (Chen, L.); Zhao, JH (Zhao, J. H.) |
| Title: Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films |
| Source: PHYSICAL REVIEW B, 81 (23): Art. No. 235201 JUN 2 2010 |
| Abstract: Ga1-xMnxAs films with exceptionally high saturation magnetizations of approximate to 100 emu/cm(3) corresponding to effective Mn concentrations of x(eff)approximate to 0.10 still have a Curie temperature T-C smaller than 195 K contradicting mean-field predictions. The analysis of the critical exponent beta of the remnant magnetization-beta = 0.407(5)-in the framework of the models for disordered/amorphous ferromagnets suggests that this limit on T-C is intrinsic and due to the short range of the ferromagnetic interactions resulting from the small mean-free path of the holes. This result questions the perspective of room-temperature ferromagnetism in highly doped GaMnAs. |
| ISSN: 1098-0121 |
| Article Number: 235201 |
| DOI: 10.1103/PhysRevB.81.235201 |
| Record 2 of 8 |
| Author(s): Wei, TB (Wei, T. B.); Hu, Q (Hu, Q.); Duan, RF (Duan, R. F.); Wei, XC (Wei, X. C.); Yang, JK (Yang, J. K.); Wang, JX (Wang, J. X.); Zeng, YP (Zeng, Y. P.); Wang, GH (Wang, G. H.); Li, JM (Li, J. M.) |
| Title: Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire |
| Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157 (7): H721-H726 2010 |
| Abstract: We have investigated the hydride vapor-phase epitaxy growth of (10 (1) over bar(3) over bar)-oriented GaN thick films on patterned sapphire substrates (PSSs) (10 (1) over bar0). From characterization by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and photoluminescence (PL), it is determined that the crystalline and optical qualities of (10 (1) over bar(3) over bar) GaN epilayers grown on the cylindrical PSS are better than those on the flat sapphire. However, two main crystalline orientations (10 (1) over bar(3) over bar) and (11 (2) over bar2) dominate the GaN epilayers grown on the pyramidal PSS, demonstrating poor quality. After etching in the mixed acids, these (10 (1) over bar(3) over bar) GaN films are dotted with oblique pyramids, concurrently lining along the < 30 (3) over bar2 > direction, indicative of a typical N-polarity characteristic. Defect-related optical transitions of the (10 (1) over bar(3) over bar) GaN epilayers are identified and detailedly discussed in virtue of the temperature-dependent PL. In particular, an anomalous blueshift-redshift transition appears with an increase in temperature for the broad blue luminescence due to the thermal activation of the shallow level. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3425820] All rights reserved. |
| ISSN: 0013-4651 |
| DOI: 10.1149/1.3425820 |
| Record 3 of 8 |
| Author(s): Shi, HL (Shi, Hongliang); Chu, MF (Chu, Mingfu); Zhang, P (Zhang, Ping) |
| Title: Optical properties of UO2 and PuO2 |
| Source: JOURNAL OF NUCLEAR MATERIALS, 400 (2): 151-156 MAY 15 2010 |
| Abstract: We perform first-principles calculations of electronic structure and optical properties for UO2 and PuO2 based on the density functional theory using the generalized gradient approximation (GGA) + U scheme. The main features in orbital-resolved partial density of states for occupied f and p orbitals, unoccupied d orbitals, and related gaps are well reproduced compared to experimental observations. Based on the satisfactory ground-state electronic structure calculations, the dynamical dielectric function and related optical spectra, i.e., the reflectivity, adsorption coefficient, energy-loss, and refractive index spectrum, are obtained. These results are consistent with the available experiments. (C) 2010 Elsevier B.V. All rights reserved. |
| ISSN: 0022-3115 |
| DOI: 10.1016/j.jnucmat.2010.02.024 |
| Record 4 of 8 |
| Author(s): Xu, XQ (Xu, Xiaoqing); Liu, XL (Liu, Xianglin); Guo, Y (Guo, Yan); Wang, J (Wang, Jun); Song, HP (Song, Huaping); Yang, SY (Yang, Shaoyan); Wei, HY (Wei, Hongyuan); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo) |
| Title: Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy |
| Source: JOURNAL OF APPLIED PHYSICS, 107 (10): Art. No. 104510 MAY 15 2010 |
| Abstract: The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS. Considering the spontaneous polarization at the surfaces and interfaces and the different positions of Fermi levels at the surfaces, we compare the energy band structures of Al/Ga-polar AlN/GaN and N-polar GaN/AlN heterojunctions, and give corrections to the XPS-measured valence band offsets. Other AlN/GaN heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3408777] |
| ISSN: 0021-8979 |
| Article Number: 104510 |
| DOI: 10.1063/1.3408777 |
| Record 5 of 8 |
| Author(s): Zhang, JY (Zhang, Jiayong); Wang, XF (Wang, Xiaofeng); Wang, XD (Wang, Xiaodong); Ma, HL (Ma, Huili); Cheng, KF (Cheng, Kaifang); Fan, ZC (Fan, Zhongchao); Li, Y (Li, Yan); Ji, A (Ji, An); Yang, FH (Yang, Fuhua) |
| Title: Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application |
| Source: APPLIED PHYSICS LETTERS, 96 (21): Art. No. 213505 MAY 24 2010 |
| Abstract: A nanogap electrode fabrication method was developed and nanogap electrode as small as 17 nm was achieved based on sacrificial spacer process and conventional lithography. We have transferred this method to lateral phase-change random access memory (PCRAM) device fabrication. The electrical characterizations of 4.6 mu m gap width using conventional lithography and 88 nm width based on this technology are shown. It is found that the threshold voltage and the dc power consumption are remarkably decreased due to nanogap electrode process. Our method cannot only improve the fabrication efficiency of PCRAM but also be easily transferred to other nanoelectronics applications. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3431297] |
| ISSN: 0003-6951 |
| Article Number: 213505 |
| DOI: 10.1063/1.3431297 |
| Record 6 of 8 |
| Author(s): Zhou, WZ (Zhou, W. Z.); Lin, T (Lin, T.); Shang, LY (Shang, L. Y.); Yu, G (Yu, G.); Gao, KH (Gao, K. H.); Zhou, YM (Zhou, Y. M.); Wei, LM (Wei, L. M.); Cui, LJ (Cui, L. J.); Zeng, YP (Zeng, Y. P.); Guo, SL (Guo, S. L.); Chu, JH (Chu, J. H.) |
| Title: Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction |
| Source: PHYSICAL REVIEW B, 81 (19): Art. No. 195312 MAY 15 2010 |
| Abstract: The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting. |
| ISSN: 1098-0121 |
| Article Number: 195312 |
| DOI: 10.1103/PhysRevB.81.195312 |
| Record 7 of 8 |
| Author(s): Wang, BT (Wang, Bao-Tian); Shi, HL (Shi, Hongliang); Li, WD (Li, Wei-Dong); Zhang, P (Zhang, Ping) |
| Title: First-principles study of ground-state properties and high pressure behavior of ThO2 |
| Source: JOURNAL OF NUCLEAR MATERIALS, 399 (2-3): 181-188 APR 30 2010 |
| Abstract: The mechanical properties, electronic structure and phonon dispersion of ground state ThO2 as well as the structure behavior up to 240 GPa are studied using first-principles density-functional theory. Our calculated elastic constants indicate that both the ground-state fluorite structure and high pressure cotunnite structure of ThO2 are mechanically stable. The bulk modulus, shear modulus, and Young's modulus of cotunnite ThO2 are all smaller by approximately 25% compared with those of fluorite ThO2. The Poisson's ratios of both structures are approximately equal to 0.3 and the hardness of fluorite ThO2 is 22.4 GPa. The electronic structure and bonding nature of fluorite ThO2 are fully analyzed, and show that the Th-O bond displays a mixed ionic/covalent character. The phase transition from the fluorite to cotunnite structure is calculated to occur at the pressure of 26.5 GPa, consistent with recent experimental measurement by ldiri et al. [1]. For the cotunnite phase it is further predicted that an isostructural transition takes place in the pressure region of 80-130 GPa. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved. |
| ISSN: 0022-3115 |
| DOI: 10.1016/j.jnucmat.2010.01.017 |
| Record 8 of 8 |
| Author(s): You, JB (You, J. B.); Zhang, XW (Zhang, X. W.); Zhang, SG (Zhang, S. G.); Wang, JX (Wang, J. X.); Yin, ZG (Yin, Z. G.); Tan, HR (Tan, H. R.); Zhang, WJ (Zhang, W. J.); Chu, PK (Chu, P. K.); Cui, B (Cui, B.); Wowchak, AM (Wowchak, A. M.); Dabiran, AM (Dabiran, A. M.); Chow, PP (Chow, P. P.) |
| Title: Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes |
| Source: APPLIED PHYSICS LETTERS, 96 (20): Art. No. 201102 MAY 17 2010 |
| Abstract: n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3430039] |
| ISSN: 0003-6951 |
| Article Number: 201102 |
| DOI: 10.1063/1.3430039 |
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