以下全文已提交到SEMI-IR，欢迎浏览和下载：
| Record 1 of 22 |
| Author(s): Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jahn, U (Jahn, U.); Zhu, JJ (Zhu, J. J.); Zhao, DG (Zhao, D. G.); Liu, ZS (Liu, Z. S.); Zhang, SM (Zhang, S. M.); Qiu, YX (Qiu, Y. X.); Yang, H (Yang, H.) |
| Title: Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties |
| Source: PHYSICA B-CONDENSED MATTER, 405 (22): 4668-4672 NOV 15 2010 |
| Abstract: The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer. (C) 2010 Elevier B.V. All rights reserved. |
| ISSN: 0921-4526 |
| DOI: 10.1016/j.physb.2010.08.058 |
| Record 2 of 22 |
| Author(s): Zhou, XL (Zhou, X. L.); Chen, YH (Chen, Y. H.); Jia, CH (Jia, C. H.); Ye, XL (Ye, X. L.); Xu, B (Xu, Bo); Wang, ZG (Wang, Z. G.) |
| Title: Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density |
| Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43 (48): Art. No. 485102 DEC 8 2010 |
| Abstract: In this report, we have investigated the temperature and injection power dependent photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and high areal density, respectively. It was found that, for the high-density samples, state filling effect and abnormal temperature dependence were interacting. In particular, the injection power-induced variations were most obvious at the temperature interval where carriers transfer from small quantum dots (SQDs) to large quantum dots (LQDs). Such interplay effects could be explained by carrier population of SQDs relative to LQDs, which could be fitted well using a thermal carrier rate equation model. On the other hand, for the low density sample, an abnormal broadening of full width at half maximum (FWHM) was observed at the 15-100 K interval. In addition, the FWHM also broadened with increasing injection power at the whole measured temperature interval. Such peculiarities of low density QDs could be attributed to the exciton dephasing processes, which is similar to the characteristic of a single quantum dot. The compared interplay effects of high-and low-density QDs reflect the difference between an interacting and isolated QDs system. |
| ISSN: 0022-3727 |
| Article Number: 485102 |
| DOI: 10.1088/0022-3727/43/48/485102 |
| Record 3 of 22 |
| Author(s): He, J (He, Jun); Wang, L (Wang, Lin); Li, F (Li, Fang); Liu, YL (Liu, Yuliang) |
| Title: An Ameliorated Phase Generated Carrier Demodulation Algorithm With Low Harmonic Distortion and High Stability |
| Source: JOURNAL OF LIGHTWAVE TECHNOLOGY, 28 (22): 3258-3265 NOV 15 2010 |
| Abstract: A novel ameliorated phase generated carrier (PGC) demodulation algorithm based on arctangent function and differential-self-multiplying (DSM) is proposed in this paper. The harmonic distortion due to nonlinearity and the stability with light intensity disturbance (LID) are investigated both theoretically and experimentally. The nonlinearity of the PGC demodulation algorithm has been analyzed and an analytical expression of the total-harmonic-distortion (THD) has been derived. Experimental results have confirmed the low harmonic distortion of the ameliorated PGC algorithm as expected by the theoretical analysis. Compared with the traditional PGC-arctan and PGC-DCM algorithm, the ameliorated PGC algorithm has a much lower THD as well as a better signal-to-noise-and-distortion (SINAD). A THD of below 0.1% and a SINAD of 60 dB have been achieved with PGC modulation depth (value) ranges from 1.5 to 3.5 rad. The stability performance with LID has also been studied. The ameliorated PGC algorithm has a much higher stability than the PGC-DCM algorithm. It can keep stable operations with LID depth as large as 26.5 dB and LID frequency as high as 1 kHz. The system employing the ameliorated PGC demodulation algorithm has a minimum detectable phase shift of 5 mu rad/root Hz @ 1 kHz, a large dynamic range of 120 dB @ 100 Hz, and a high linearity of better than 99.99%. |
| ISSN: 0733-8724 |
| DOI: 10.1109/JLT.2010.2081347 |
| Record 4 of 22 |
| Author(s): Tang, AW (Tang, Aiwei); Qu, SC (Qu, Shengchun); Hou, YB (Hou, Yanbing); Teng, F (Teng, Feng); Tan, HR (Tan, Hairen); Liu, J (Liu, Jie); Zhang, XW (Zhang, Xingwang); Wang, YS (Wang, Yongsheng); Wang, ZG (Wang, Zhanguo) |
| Title: Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (9): Art. No. 094320 NOV 1 2010 |
| Abstract: An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3506708] |
| ISSN: 0021-8979 |
| Article Number: 094320 |
| DOI: 10.1063/1.3506708 |
| Record 5 of 22 |
| Author(s): Zhao, JH (Zhao, Ji-Hong); Cheng, BW (Cheng, Bu-Wen); Chen, QD (Chen, Qi-Dai); Su, W (Su, Wen); Jiang, Y (Jiang, Ying); Chen, ZG (Chen, Zhan-Guo); Jia, G (Jia, Gang); Sun, HB (Sun, Hong-Bo) |
| Title: Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation |
| Source: IEEE PHOTONICS JOURNAL, 2 (6): 974-980 DEC 2010 |
| Abstract: The second-harmonic generation (SHG) from Si1-xGex alloy films has been investigated by near-infrared femtosecond laser. Recognized by s-out polarized SHG intensity versus rotational angle of sample, the crystal symmetry of the fully strained Si0.83Ge0.17 alloy is found changed from the O-h to the C-2 point group due to the inhomogeneity of the strain. Calibrated by double crystal X-ray diffraction, the strain-induced chi((2)) is estimated at 5.7 x 10(-7) esu. According to the analysis on p-in/s-out SHG, the strain-relaxed Si0.10Ge0.90 alloy film is confirmed to be not fully relaxed, and the remaining strain is quantitatively determined to be around 0.1%. |
| ISSN: 1943-0655 |
| DOI: 10.1109/JPHOT.2010.2089976 |
| Record 6 of 22 |
| Author(s): Lin, L (Lin, L.); Zhen, HL (Zhen, H. L.); Li, N (Li, N.); Lu, W (Lu, W.); Weng, QC (Weng, Q. C.); Xiong, DY (Xiong, D. Y.); Liu, FQ (Liu, F. Q.) |
| Title: Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors |
| Source: APPLIED PHYSICS LETTERS, 97 (19): Art. No. 193511 NOV 8 2010 |
| Abstract: The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517253] |
| ISSN: 0003-6951 |
| Article Number: 193511 |
| DOI: 10.1063/1.3517253 |
| Record 7 of 22 |
| Author(s): Qian, XA (Qian, Xuan); Gu, XF (Gu, Xiaofang); Ji, Y (Ji, Yang) |
| Title: Note: A time-resolved Kerr rotation system with a rotatable in-plane magnetic field |
| Source: REVIEW OF SCIENTIFIC INSTRUMENTS, 81 (10): Art. No. 106106 OCT 2010 |
| ISSN: 0034-6748 |
| Article Number: 106106 |
| DOI: 10.1063/1.3492121 |
| Record 8 of 22 |
| Author(s): Ning, JQ (Ning, J. Q.); Xu, SJ (Xu, S. J.); Wei, ZF (Wei, Z. F.); Ruan, XZ (Ruan, X. Z.); Ji, Y (Ji, Yang); Zheng, HZ (Zheng, H. Z.); Liu, HC (Liu, H. C.) |
| Title: Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks |
| Source: PHYSICS LETTERS A, 374 (47): 4793-4796 OCT 25 2010 |
| Abstract: Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks. (C) 2010 Elsevier B.V. All rights reserved. |
| ISSN: 0375-9601 |
| DOI: 10.1016/j.physleta.2010.09.073 |
| Record 9 of 22 |
| Author(s): Li, YC (Li, Yan-Chao) |
| Title: Magnetic frustration induced quantum phase transitions in the S=1/2 vertically asymmetric diamond chain |
| Source: PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 389 (23): 5550-5555 DEC 1 2010 |
| Abstract: By means of the second derivative of the ground-state energy for a finite-size system method, the quantum phase transitions (QPTs) for the frustrated vertically asymmetric diamond chain (VADC) are investigated. Our results display the plentiful frustration induced quantum phases in the model. Meanwhile, using the transfer matrix renormalization group technique (TMRG), we calculate the fidelity susceptibility and magnetic susceptibility of the VADC model in the thermodynamic limit to give a further understanding of the QPTs. (C) 2010 Elsevier B.V. All rights reserved. |
| ISSN: 0378-4371 |
| DOI: 10.1016/j.physa.2010.08.019 |
| Record 10 of 22 |
| Author(s): Bai, WL (Bai, Wenli); Gan, QQ (Gan, Qiaoqiang); Song, GF (Song, Guofeng); Chen, LH (Chen, Lianghui); Kafafi, Z (Kafafi, Zakya); Bartoli, F (Bartoli, Filbert) |
| Title: Broadband short-range surface plasmon structures for absorption enhancement in organic photovoltaics |
| Source: OPTICS EXPRESS, 18 (23): A620-A630 NOV 8 2010 |
| Abstract: We theoretically demonstrate a polarization-independent nanopatterned ultra-thin metallic structure supporting short-range surface plasmon polariton (SRSPP) modes to improve the performance of organic solar cells. The physical mechanism and the mode distribution of the SRSPP excited in the cell device were analyzed, and reveal that the SRSPP-assisted broadband absorption enhancement peak could be tuned by tailoring the parameters of the nanopatterned metallic structure. Three-dimensional finite-difference time domain calculations show that this plasmonic structure can enhance the optical absorption of polymer-based photovoltaics by 39% to 112%, depending on the nature of the active layer (corresponding to an enhancement in short-circuit current density by 47% to 130%). These results are promising for the design of organic photovoltaics with enhanced performance. (C) 2010 Optical Society of America |
| ISSN: 1094-4087 |
| Record 11 of 22 |
| Author(s): Zhang, YJ (Zhang, Yejin); Zheng, WH (Zheng, Wanhua); Aiyi, Q (Aiyi, Qi); Qu, HW (Qu, Hongwei); Peng, HL (Peng, Hongling); Xie, SZ (Xie, Shizhong); Chen, LH (Chen, Lianghui) |
| Title: Design of Photonic Crystal Semiconductor Optical Amplifier With Polarization Independence |
| Source: JOURNAL OF LIGHTWAVE TECHNOLOGY, 28 (22): 3207-3211 NOV 15 2010 |
| Abstract: Slow-light effects in photonic crystal (PC) waveguides can enhance light-mater interaction near the photonic band edge, which can be used to design a short cavity length semiconductor optical amplifier (SOA). In this paper, a novel SOA based on slow-light effects in PC waveguides (PCSOA) is presented. To realize the amplification of the optical signal with polarization independence, a PCSOA is designed with a compensated structure. The cascaded structure leads to a balanced amplification to the TE and TM polarized light. |
| ISSN: 0733-8724 |
| DOI: 10.1109/JLT.2010.2088108 |
| Record 12 of 22 |
| Author(s): Song, YF (Song, Yafeng); Lu, YW (Lu, Yanwu); Zhang, BA (Zhang, Biao); Xu, XQ (Xu, Xiaoqing); Wang, J (Wang, Jun); Guo, Y (Guo, Yan); Shi, K (Shi, Kai); Li, ZW (Li, Zhiwei); Liu, XL (Liu, Xianglin); Yang, SY (Yang, Shaoyan); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo) |
| Title: Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (8): Art. No. 083112 OCT 15 2010 |
| Abstract: Intersubband absorption energy shifts in 3-level system stemming from depolarization and excitonlike effects are investigated. Analytically, the expressions we derive present good explanations to the conventional 2-level results and bare potential transition energy results; and numerical results show that they are more exact than the previous studies to describe the 3-level system depolarization and excitonlike shift (DES) character especially for higher carrier density (more than 8 x 10(11) cm(-2)). One interesting detail we find is that the "large blue" DES becomes "slight redshift" in the low doping limit (less than 1.9 x 10(11) cm(-2)), which may be neglected by the previous studies of intersubband transitions. Temperature character of DES in the step well structure is also numerically studied. Finally the above are applied to calculate asymmetric step quantum well structures. The two main functional aspects of terahertz (THz) emitters are discussed and several basic optimizing conditions are considered. By adjusting the well geometry parameters and material composition systematically, some optimized structures which satisfy all of the six conditions are recommended in tables. These optimizations may provide useful references to the design of 3-level-based optically pumping THz emitters. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3487953] |
| ISSN: 0021-8979 |
| Article Number: 083112 |
| DOI: 10.1063/1.3487953 |
| Record 13 of 22 |
| Author(s): Tung, LC (Tung, L. -C.); Wu, XG (Wu, X. -G.); Pfeiffer, LN (Pfeiffer, L. N.); West, KW (West, K. W.); Wang, YJ (Wang, Y. -J.) |
| Title: Resonant subband Landau level coupling in symmetric quantum well |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (8): Art. No. 083502 OCT 15 2010 |
| Abstract: Subband structure and depolarization shifts in an ultrahigh mobility GaAs/Al0.24Ga0.76As quantum well are studied using magnetoinfrared spectroscopy via resonant subband Landau level coupling. Resonant couplings between the first and up to the fourth subbands are identified by well-separated antilevel-crossing split resonance, while the hy-lying subbands were identified by the cyclotron resonance linewidth broadening in the literature. In addition, a forbidden intersubband transition (first to third) has been observed. With the precise determination of the subband structure, we find that the depolarization shift can be well described by the semiclassical slab plasma model and the possible origins for the forbidden transition are discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3496516] |
| ISSN: 0021-8979 |
| Article Number: 083502 |
| DOI: 10.1063/1.3496516 |
| Record 14 of 22 |
| Author(s): Zhou, GY (Zhou, G. Y.); Chen, YH (Chen, Y. H.); Tang, CG (Tang, C. G.); Liang, LY (Liang, L. Y.); Jin, P (Jin, P.); Wang, ZG (Wang, Z. G.) |
| Title: The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (8): Art. No. 083513 OCT 15 2010 |
| Abstract: In this work, we have adopted reflectance difference spectroscopy to study the evolution of InAs layer grown at different temperatures in GaAs matrix. Associated with the two- to three-dimensional growth transition of InAs layer, the transition energies and the in-plane optical anisotropy of InAs wetting layer exhibit abrupt changes. This provides a new way to decide the critical thickness h(c) for the growth transition. The obtained h(c)s are compared with those determined by atomic force microscope measurement, and discrepancy is found at high temperatures. The origin of the difference is clarified and the variations in hc with temperature are further discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494043] |
| ISSN: 0021-8979 |
| Article Number: 083513 |
| DOI: 10.1063/1.3494043 |
| Record 15 of 22 |
| Author(s): Luo, JY (Luo, JunYan); Wang, SK (Wang, Shi-Kuan); He, XL (He, Xiao-Ling); Li, XQ (Li, Xin-Qi); Yan, YJ (Yan, YiJing) |
| Title: Real-time counting of single electron tunneling through a T-shaped double quantum dot system |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (8): Art. No. 083720 OCT 15 2010 |
| Abstract: Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated, based on a Monte Carlo scheme. The double dot is embedded in a dissipative environment and the presence of electrons on the double dot is detected with a nearby quantum point contact. We demonstrate directly the bunching behavior in electron transport, which leads eventually to a super-Poissonian noise. Particularly, in the context of full counting statistics, we investigate the essential difference between the dephasing mechanisms induced by the quantum point contact detection and the coupling to the external phonon bath. A number of intriguing noise features associated with various transport mechanisms are revealed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3501026] |
| ISSN: 0021-8979 |
| Article Number: 083720 |
| DOI: 10.1063/1.3501026 |
| Record 16 of 22 |
| Author(s): Wang, Y (Wang Yang); Qiu, YP (Qiu Ying-Ping); Pan, JQ (Pan Jiao-Qing); Zhao, LJ (Zhao Ling-Juan); Zhu, HL (Zhu Hong-Liang); Wang, W (Wang Wei) |
| Title: High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers |
| Source: CHINESE PHYSICS LETTERS, 27 (11): Art. No. 114201 NOV 2010 |
| Abstract: We fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature.. 0 of 160K at 20 degrees C is obtained for 500-mu m-long lasers. T-0 is measured as high as 88K in the temperature range of 15-75 degrees C. Cavity length dependence of T-0 is investigated. |
| ISSN: 0256-307X |
| Article Number: 114201 |
| DOI: 10.1088/0256-307X/27/11/114201 |
| Record 17 of 22 |
| Author(s): Zhang, L (Zhang Ling); Guo, L (Guo Lin); Xiong, B (Xiong Bo); Yu, HJ (Yu Hai-Juan); Sun, L (Sun Lu); Hou, W (Hou Wei); Lin, XC (Lin Xue-Chun); Li, JM (Li Jin-Min) |
| Title: LD Side-Pumped Passive Mode-Locked TEM00 Nd:YAG Laser Based on SESAM |
| Source: CHINESE PHYSICS LETTERS, 27 (11): Art. No. 114203 NOV 2010 |
| Abstract: We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained. |
| ISSN: 0256-307X |
| Article Number: 114203 |
| DOI: 10.1088/0256-307X/27/11/114203 |
| Record 18 of 22 |
| Author(s): Guo, WH (Guo Wan-Hong); Liu, JQ (Liu Jun-Qi); Lu, QY (Lu Quan-Yong); Zhang, W (Zhang Wei); Jiang, YC (Jiang Yu-Chao); Li, L (Li Lu); Wang, LJ (Wang Li-Jun); Liu, FQ (Liu Feng-Qi); Wang, ZG (Wang Zhan-Guo) |
| Title: Surface Emitting Distributed Feedback Quantum Cascade Laser around 8.3 mu m |
| Source: CHINESE PHYSICS LETTERS, 27 (11): Art. No. 114214 NOV 2010 |
| Abstract: We demonstrate surface emitting distributed feedback quantum cascade lasers emitting at wavelengths from 8.1 mu m at 90 K to 8.4 mu m at 210 K. The second-order metalized grating is carefully designed using a modified coupled-mode theory and fabricated by contact lithography. The devices show single mode behavior with a side mode suppression ratio above 18 dB at all working temperatures. At 90 K, the device emits an optical power of 101 mW from the surface and 199 mW from the edge. In addition, a double-lobe far-field pattern with a separation of 2.2 degrees is obtained in the direction along the waveguide. |
| ISSN: 0256-307X |
| Article Number: 114214 |
| DOI: 10.1088/0256-307X/27/11/114214 |
| Record 19 of 22 |
| Author(s): Zeng, C (Zeng Chang); Zhang, SM (Zhang Shu-Ming); Ji, L (Ji Lian); Wang, HB (Wang Huai-Bing); Zhao, DG (Zhao De-Gang); Zhu, JJ (Zhu Jian-Jun); Liu, ZS (Liu Zong-Shun); Jiang, DS (Jiang De-Sheng); Cao, Q (Cao Qing); Chong, M (Chong Ming); Duan, LH (Duan Li-Hong); Wang, H (Wang Hai); Shi, YS (Shi Yong-Sheng); Liu, SY (Liu Su-Ying); Yang, H (Yang Hui); Chen, LH (Chen Liang-Hui) |
| Title: Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours |
| Source: CHINESE PHYSICS LETTERS, 27 (11): Art. No. 114215 NOV 2010 |
| Abstract: We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively. |
| ISSN: 0256-307X |
| Article Number: 114215 |
| DOI: 10.1088/0256-307X/27/11/114215 |
| Record 20 of 22 |
| Author(s): Wang, ZG (Wang, Zhiguo); Li, JB (Li, Jingbo); Gao, F (Gao, Fei); Weber, WJ (Weber, William J.) |
| Title: Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires |
| Source: CHEMPHYSCHEM, 11 (15): 3329-3332 OCT 25 2010 |
| Abstract: The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes. |
| ISSN: 1439-4235 |
| DOI: 10.1002/cphc.201000244 |
| Record 21 of 22 |
| Author(s): Yin, CM (Yin, Chunming); Shen, B (Shen, Bo); Zhang, Q (Zhang, Qi); Xu, FJ (Xu, Fujun); Tang, N (Tang, Ning); Cen, LB (Cen, Longbin); Wang, XQ (Wang, Xinqiang); Chen, YH (Chen, Yonghai); Yu, JL (Yu, Jinling) |
| Title: Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain |
| Source: APPLIED PHYSICS LETTERS, 97 (18): Art. No. 181904 NOV 1 2010 |
| Abstract: The spin splitting in GaN-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. The ratios of Rashba and Dresselhaus spin-orbit coupling coefficients (R/D ratios) have been measured in AlxGa1-xN/GaN heterostructures with various Al compositions. It is found that the R/D ratio increases from 4.1 to 19.8 with the Al composition of the AlxGa1-xN barrier varied from 15% to 36%. The Dresselhaus coefficient of bulk GaN is experimentally obtained to be 0.4 eV angstrom(3). The results indicate that the spin splitting in GaN-based heterostructures can be modulated effectively by the polarization-induced electric fields. (C) 2010 American Institute of Physics. [doi:10.1063/1.3511768] |
| ISSN: 0003-6951 |
| Article Number: 181904 |
| DOI: 10.1063/1.3511768 |
| Record 22 of 22 |
| Author(s): Wang, SJ (Wang, Shi-Jiang); Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Lin, JD (Lin, Jian-Dong); Du, Y (Du, Yun) |
| Book Group Author(s): IEEE |
| Title: Directional Emission InGaAsP/InP Mirocylinder Lasers |
| Source: 2010 IEEE PHOTONICS SOCIETY WINTER TOPICALS MEETING SERIES: 137-138 2010 |
| Conference Title: IEEE Photonics Society Winter Topicals Meeting Series |
| Conference Date: JAN 11-13, 2010 |
| Conference Location: Majorca, SPAIN |
| Abstract: Electrically injected InGaAsP/InP microcylinder lasers connected to an output waveguide are fabricated. Observed mode jump versus temperature with an interval of two times of longitudinal mode interval is agreement with that predicted by mode coupling. |
| ISBN: 978-1-4244-5240-8 |
|
