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今起增加发布全所国际会议论文，数据来源：Conference Proceedings Citation Index- Science (CPCI-S)。今天发布的是半导体所今年以来的全部国际会议论文数据，以后将每两周发布一次最新数据。以期为大家增加一些参考资料。
图书信息中心
2009-9-11
| Record 1 of 68 |
| Author(s): Zhang, WC (Zhang, Wancheng); Wu, NJ (Wu, Nan-Jian) |
| Title: Compact non-binary fast adders using single-electron devices |
| Source: MICROELECTRONICS JOURNAL, 40 (8): 1244-1254 AUG 2009 |
| Abstract: This paper proposes compact adders that are based on non-binary redundant number systems and single-electron (SE) devices. The adders use the number of single electrons to represent discrete multiple-valued logic state and manipulate single electrons to perform arithmetic operations. These adders have fast speed and are referred as fast adders. We develop a family of SE transfer circuits based on MOSFET-based SE turnstile. The fast adder circuit can be easily designed by directly mapping the graphical counter tree diagram (CTD) representation of the addition algorithm to SE devices and circuits. We propose two design approaches to implement fast adders using SE transfer circuits: the threshold approach and the periodic approach. The periodic approach uses the voltage-controlled single-electron transfer characteristics to efficiently achieve periodic arithmetic functions. We use HSPICE simulator to verify fast adders operations. The speeds of the proposed adders are fast. The numbers of transistors of the adders are much smaller than conventional approaches. The power dissipations are much lower than CMOS and multiple-valued current-mode fast adders. (C) 2009 Elsevier Ltd. All rights reserved. |
| ISSN: 0026-2692 |
| DOI: 10.1016/j.mejo.2009.06.001 |
| Record 2 of 68 |
| Author(s): Tang, CG (Tang, C. G.); Chen, YH (Chen, Y. H.); Liu, Y (Liu, Y.); Wang, ZG (Wang, Z. G.) |
| Title: Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas |
| Source: JOURNAL OF PHYSICS-CONDENSED MATTER, 21 (37): Art. No. 375802 SEP 16 2009 |
| Abstract: We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation. |
| ISSN: 0953-8984 |
| Article Number: 375802 |
| DOI: 10.1088/0953-8984/21/37/375802 |
| Record 3 of 68 |
| Author(s): Luo, JY (Luo, Jun Yan); Jiao, HJ (Jiao, Hujun); Li, F (Li, Feng); Li, XQ (Li, Xin-Qi); Yan, YJ (Yan, Yi Jing) |
| Title: Reduced dynamics with renormalization in solid-state charge qubit measurement |
| Source: JOURNAL OF PHYSICS-CONDENSED MATTER, 21 (38): Art. No. 385801 SEP 23 2009 |
| Abstract: Quantum measurement will inevitably cause backaction on the measured system, resulting in the well-known dephasing and relaxation. In this paper, in the context of solid-state qubit measurement by a mesoscopic detector, we show that an alternative backaction known as renormalization is important under some circumstances. This effect is largely overlooked in the theory of quantum measurement. |
| ISSN: 0953-8984 |
| Article Number: 385801 |
| DOI: 10.1088/0953-8984/21/38/385801 |
| Record 4 of 68 |
| Author(s): Xu, DW (Xu, D. W.); Yoon, SF (Yoon, S. F.); Tong, CZ (Tong, C. Z.); Zhao, LJ (Zhao, L. J.); Ding, Y (Ding, Y.); Fan, WJ (Fan, W. J.) |
| Title: High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs |
| Source: IEEE PHOTONICS TECHNOLOGY LETTERS, 21 (17): 1211-1213 SEP 1 2009 |
| Abstract: In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mu m InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20 degrees C to 60 degrees C. The highest output power of 0.435mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed. |
| ISSN: 1041-1135 |
| DOI: 10.1109/LPT.2009.2024220 |
| Record 5 of 68 |
| Author(s): Liu, GH (Liu, G. H.); Chen, YH (Chen, Y. H.); Jia, CH (Jia, C. H.); Wang, ZG (Wang, Z. G.) |
| Title: Spin precession and electron spin polarization wave in [001]-grown quantum wells |
| Source: EUROPEAN PHYSICAL JOURNAL B, 70 (3): 397-401 AUG 2009 |
| Abstract: We theoretically study the spatial behaviors of spin precessions modulated by an effective magnetic field in a two-dimensional electron system with spin-orbit interaction. Through analysis of interaction between the spin and the effective magnetic field, we find some laws of spin precession in the system, by which we explain some previous phenomena of spin precession, and predict a controllable electron spin polarization wave in [001]-grown quantum wells. The shape of the wave, like water wave, mostly are ellipse-like or circle-like, and the wavelength is anisotropic in the quantum wells with two unequal coupling strengths of the Rashba and Dresselhaus interactions, and is isotropic in the quantum wells with only one spin orbit interaction. |
| ISSN: 1434-6028 |
| DOI: 10.1140/epjb/e2009-00237-9 |
| Record 6 of 68 |
| Author(s): Zhou, Y (Zhou, Yue); Zhang, GF (Zhang, Guo-Feng); Li, SS (Li, Shu-Shen); Abliz, A (Abliz, Ahmad) |
| Title: Optimal teleportation via thermal entangled states of a two-qubit Heisenberg chain |
| Source: EPL, 86 (5): Art. No. 50004 JUN 2009 |
| Abstract: We study the optimal teleportation based on Bell measurements via the thermal states of a two-qubit Heisenberg XXX chain in the presence of the Dzyaloshinsky-Moriya (DM) anisotropic antisymmetric interaction and obtain an optimal unitary transformation. The explicit expressions of the output state and the teleportation fidelity are presented and compared with those of the standard protocol. It is shown that in this protocol the teleportation fidelity is always larger and the unit fidelity is achieved at zero temperature. The DM interaction can enhance the teleportation fidelity at finite temperatures, as opposed to the effect of the interaction in the standard protocol. Cases with other types of anisotropies are also discussed. Copyright (C) EPLA, 2009 |
| ISSN: 0295-5075 |
| Article Number: 50004 |
| DOI: 10.1209/0295-5075/86/50004 |
| Record 7 of 68 |
| Author(s): Peng, WB (Peng Wen-Bo); Liu, SY (Liu Shi-Yong); Xiao, HB (Xiao Hai-Bo); Zhang, CS (Zhang Chang-Sha); Shi, MJ (Shi Ming-Ji); Zeng, XB (Zeng Xiang-Bo); Xu, YY (Xu Yan-Yue); Kong, GL (Kong Guang-Lin); Yu, YD (Yu Yu-De) |
| Title: Gap states and microstructure of microcrystalline silicon thin films |
| Source: ACTA PHYSICA SINICA, 58 (8): 5716-5720 AUG 2009 |
| Abstract: The density of states (DOS) above Fermi level of hydrogenated microcrystalline silicon (mu c-Si:H) films is correlated to the material microstructure. We use Raman scattering and infrared absorption spectra to characterize the structure of the films made with different hydrogen dilution ratios. The DOS of the films is examined by modulated photocurrent measurement. The results have been accounted for in the framework of a three-phase model comprised of amorphous and crystalline components, with the grain boundary as the third phase. We observed that the DOS increases monotonically as the grain boundary volume fractions f(gb) is increased, which indicates a positive correlation between the DOS and the grain boundary volume fraction. |
| ISSN: 1000-3290 |
| Record 8 of 68 |
| Author(s): Yu, HM (Yu, Hongmin); Liu, ZL (Liu, Zhongli); Li, GS (Li, Gaoshan) |
| Book Group Author(s): IEEE |
| Title: A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation |
| Source: 2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), VOLS 1-3: 503-508 2008 |
| Conference Title: 11th IEEE Singapore International Conference on Communication Systems |
| Conference Date: NOV 19-21, 2008 |
| Conference Location: Guangzhou, PEOPLES R CHINA |
| Abstract: Compared with the ordinary adaptive filter, the variable-length adaptive filter is more efficient (including smaller., lower power consumption and higher computational complexity output SNR) because of its tap-length learning algorithm, which is able to dynamically adapt its tap-length to the optimal tap-length that best balances the complexity and the performance of the adaptive filter. Among existing tap-length algorithms, the LMS-style Variable Tap-Length Algorithm (also called Fractional Tap-Length Algorithm or FT Algorithm) proposed by Y.Gong has the best performance because it has the fastest convergence rates and best stability. However, in some cases its performance deteriorates dramatically. To solve this problem, we first analyze the FT algorithm and point out some of its defects. Second, we propose a new FT algorithm called 'VSLMS' (Variable Step-size LMS) Style Tap-Length Learning Algorithm, which not only uses the concept of FT but also introduces a new concept of adaptive convergence slope. With this improvement the new FT algorithm has even faster convergence rates and better stability. Finally, we offer computer simulations to verify this improvement. |
| ISBN: 978-1-4244-2423-8 |
| Record 9 of 68 |
| Author(s): Chen, FX (Chen, Fangxiong); Ma, HP (Ma, Heping); Chen, B (Chen, Bei); Shi, Y (Shi, Yin); Lin, M (Lin, Min); Jia, HL (Jia, Hailong) |
| Book Group Author(s): IEEE |
| Title: A Complex BPF with On Chip Auto-tuning Architecture for Wireless Receivers |
| Source: 2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), VOLS 1-3: 1451-1455 2008 |
| Conference Title: 11th IEEE Singapore International Conference on Communication Systems |
| Conference Date: NOV 19-21, 2008 |
| Conference Location: Guangzhou, PEOPLES R CHINA |
| Abstract: A 3(rd) order complex band-pass filter (BPF) with auto-tuning architecture is proposed in this paper. It is implemented in 0.18um standard CMOS technology. The complex filter is centered at 4.092MHz with bandwidth of 2.4MHz. The in-band 3(rd) order harmonic input intercept point (IIP3) is larger than 16.2dBm, with 50 Omega as the source impedance. The input referred noise is about 80uV(rms). The RC tuning is based on Binary Search Algorithm (BSA) with tuning accuracy of 3%. The chip area of the tuning system is 0.28 x 0.22 mm(2), less than 1/8 of that of the main-filter which is 0.92 x 0.59 mm(2). After tuning is completed, the tuning system will be turned off automatically to save power and to avoid interference. The complex filter consumes 2.6mA with a 1.8V power supply. |
| ISBN: 978-1-4244-2423-8 |
| Record 10 of 68 |
| Author(s): Ma, HP (Ma, Heping); Yuan, F (Yuan, Fang); Liu, SL (Liu, Silin); Shi, Y (Shi, Yin); Dai, FF (Dai, Fa Foster) |
| Book Group Author(s): IEEE |
| Title: A Low Power Baseband Chain for CMMB Application |
| Source: 2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), VOLS 1-3: 1466-1470 2008 |
| Conference Title: 11th IEEE Singapore International Conference on Communication Systems |
| Conference Date: NOV 19-21, 2008 |
| Conference Location: Guangzhou, PEOPLES R CHINA |
| Abstract: This paper presents experimental results of an analog baseband circuit for China Multimedia Mobile Broadcasting (CMMB) direct conversion receiver in 0.35um SiGe BiCMOS process. It is the first baseband of CMMB RFIC reported so far. A 8(th)-order chebyshev low pass filter (LPF) with calibration system is used in the analog baseband circuit, the filter provides 0.5 dB passband ripple and -35 dB attenuation at 6MHz with the cutoff frequency at 4MHz, the calibration of filter is reported to achieve the bandwidth accuracy of 3%. The baseband variable gain amplifier (VGA) achieves more than 40 dB gain tuning with temperature compensation. In addition, A DC offset cancellation circuit is also introduced to remove the offset from layout and self-mixing, and the remaining offset voltage and current consumption are only 6mV and 412uA respectively. Implemented in a 0.35um SiGe technology with 1.1 mm(2) die size, this tuner baseband achieves OIP3 of 25.5 dBm and dissipate 16.4 mA under 2.8-V supply. |
| ISBN: 978-1-4244-2423-8 |
| Record 11 of 68 |
| Author(s): Zhang, X (Zhang, Xu); Pei, WH (Pei, Weihua); Gui, Q (Gui, Qiang); Chen, HD (Chen, Hongda) |
| Book Group Author(s): IEEE |
| Title: Low Power Integrated Circuits for Wireless Neural Recording Applications |
| Source: 2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), VOLS 1-4: 650-653 2008 |
| Conference Title: IEEE Asia Pacific Conference on Circuits and Systems (APCCAS 2008) |
| Conference Date: NOV 30-DEC 03, 2008 |
| Conference Location: Macao, PEOPLES R CHINA |
| Abstract: A group of prototype integrated circuits are presented for a wireless neural recording micro-system. An inductive link was built for transcutaneous wireless power transfer and data transmission. Power and data were transmitted by a pair of coils on a same carrier frequency. The integrated receiver circuitry was composed of a full-wave bridge rectifier, a voltage regulator, a date recovery circuit, a clock recovery circuit and a power detector. The amplifiers were designed with a limited bandwidth for neural signals acquisition. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments. 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 MHz carrier within 10 mm. The total gain of 60 dB was obtained by the preamplifier and a main amplifier at 0.95Hz - 13.41 KHz with 0.215 mW power dissipation. The power consumption of the 100 MHz ASK transmitter is 0.374 mW. All the integrated circuits operated under a 3.3 V power supply except the voltage regulator. |
| ISBN: 978-1-4244-2341-5 |
| Record 12 of 68 |
| Author(s): Liu, SL (Liu, Silin); Shi, Y (Shi, Yin) |
| Book Group Author(s): IEEE |
| Title: Fast Locking and High Accurate Current Matching Phase-Locked Loop |
| Source: 2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), VOLS 1-4: 1136-1139 2008 |
| Conference Title: IEEE Asia Pacific Conference on Circuits and Systems (APCCAS 2008) |
| Conference Date: NOV 30-DEC 03, 2008 |
| Conference Location: Macao, PEOPLES R CHINA |
| Abstract: In this paper, a charge-pump based phase-locked loop (CPLL) that can achieve fast locking and tiny deviation is proposed and analyzed. A lock-aid circuit is added to achieve fast locking of the CPLL. Besides, a novel differential charge pump which has good current matching characteristics and a PFD with delay cell has been used in this PLL. The proposed PILL circuit is designed based on the 0.35um 2P4M CMOS process with 3.3V/5V supply voltage. HSPICE simulation shows that the lock time of the proposed CPLL can be reduced by over 72% in comparison to the conventional PILL and its charge pump sink and source current mismatch is only 0.008%. |
| ISBN: 978-1-4244-2341-5 |
| Record 13 of 68 |
| Author(s): Chen, J (Chen, J.); Fan, WJ (Fan, W. J.); Xu, Q (Xu, Q.); Zhang, XW (Zhang, X. W.); Li, SS (Li, S. S.); Xia, JB (Xia, J. B.) |
| Title: Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots |
| Source: JOURNAL OF APPLIED PHYSICS, 105 (12): Art. No. 123705 JUN 15 2009 |
| Conference Title: 29th International Conference on Physics of Semiconductors |
| Conference Date: JUL 27-AUG 01, 2008 |
| Conference Location: Rio de Janeiro, BRAZIL |
| Abstract: The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025] |
| ISSN: 0021-8979 |
| Article Number: 123705 |
| DOI: 10.1063/1.3143025 |
| Record 14 of 68 |
| Author(s): Du, GX (Du, G. X.); Babu, MR (Babu, M. Ramesh); Han, XF (Han, X. F.); Deng, JJ (Deng, J. J.); Wang, WZ (Wang, W. Z.); Zhao, JH (Zhao, J. H.); Wang, WD (Wang, W. D.); Tang, JK (Tang, Jinke) |
| Title: Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures |
| Source: JOURNAL OF APPLIED PHYSICS, 105 (7): Art. No. 07C707 APR 1 2009 |
| Conference Title: 53rd Annual Conference on Magnetism and Magnetic Materials |
| Conference Date: NOV 11-14, 2008 |
| Conference Location: Austin, TX |
| Abstract: Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3068418] |
| ISSN: 0021-8979 |
| Article Number: 07C707 |
| DOI: 10.1063/1.3068418 |
| Record 15 of 68 |
| Author(s): Tu, XG (Tu, Xiaoguang); Chen, SW (Chen, Shaowu); Yu, JZ (Yu, Jinzhong); Wang, QM (Wang, Qiming); Chin, MK (Chin, Mee Koy) |
| Book Group Author(s): IEEE |
| Title: Ultra-compact silicon-on-insulator optical filter based on sidewall Bragg grating |
| Source: 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2: 31-34 2008 |
| Conference Title: IEEE PhotonicsGlobal at Singapore |
| Conference Date: DEC 08-11, 2008 |
| Conference Location: Singapore, SINGAPORE |
| Abstract: Micro-cavity structure composed of silicon wire with 240nm square cross section and two symmetrical sidewall waveguide Bragg gratings is fabricated and studied for the operation under telecommunication wavelengths. Optical filter of quasi-TE mode was realized based on this cavity. In such micro-cavity, optical quality factor (Q) was measured up to 380 with a 4.8nm free spectral range (FSR) and 12dB fringe contrast (FC). The measured group index of silicon waveguide with only 240nm square cross section was between 3.80 and 5.43. It is the first time group delay of silicon wire waveguide with such small core dimension is studied. Larger group delay can be expected after optimizing the design parameters and the fabrication process. |
| ISBN: 978-1-4244-3901-0 |
| Record 16 of 68 |
| Author(s): Sun, Y (Sun, Y.); Chen, YB (Chen, Y. B.); Wang, Y (Wang, Y.); Pan, JQ (Pan, J. Q.); Zhao, LJ (Zhao, L. J.); Chen, WX (Chen, W. X.); Wang, W (Wang, W.) |
| Book Group Author(s): IEEE |
| Title: Widely Frequency-Tunable Optical Microwave Source Based on Amplified Feedback Laser |
| Source: 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2: 524-527 2008 |
| Conference Title: IEEE PhotonicsGlobal at Singapore |
| Conference Date: DEC 08-11, 2008 |
| Conference Location: Singapore, SINGAPORE |
| Abstract: A monolithic integrated amplified feedback semiconductor laser is demonstrated as an optical microwave source. The optical microwave frequency is continuously tunable in the range of 19.87-26.3 GHz with extinction ratio above 6 dB, 3-dB linewidth about 3MHz. |
| ISBN: 978-1-4244-3901-0 |
| Record 17 of 68 |
| Author(s): Wang, H (Wang, H.); Zhu, HL (Zhu, H. L.); Chen, XF (Chen, X. F.); Li, JS (Li, J. S.); Wang, LS (Wang, L. S.); Zhang, W (Zhang, W.); Wang, W (Wang, W.) |
| Book Group Author(s): IEEE |
| Title: Design and Realization of Index-Coupled DFB Laser with Sampled Grating |
| Source: 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2: 668-670 2008 |
| Conference Title: IEEE PhotonicsGlobal at Singapore |
| Conference Date: DEC 08-11, 2008 |
| Conference Location: Singapore, SINGAPORE |
| Abstract: An index-coupled distributed feedback laser with the sampled grating has been designed and fabricated. The +1(st) order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5329 mu m in the experiment. The sampled grating is formed by a conventional holographic exposure combined with the usual photolithography. The typical threshold current of DFB laser with the sampled grating is 25mA, and the optical output is about 10mW at the injected current of 100mA. |
| ISBN: 978-1-4244-3901-0 |
| Record 18 of 68 |
| Author(s): Wang, LS (Wang, L. S.); Zhao, LJ (Zhao, L. J.); Pan, JQ (Pan, J. Q.); Zhang, W (Zhang, W.); Wang, H (Wang, H.); Liang, S (Liang, S.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) |
| Book Group Author(s): IEEE |
| Title: A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics |
| Source: 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2: 671-673 2008 |
| Conference Title: IEEE PhotonicsGlobal at Singapore |
| Conference Date: DEC 08-11, 2008 |
| Conference Location: Singapore, SINGAPORE |
| Abstract: A new ECTT-DHPT with InGaAsP(lambda=1.55 mu m) as base and InGaAsP(lambda=1.3 mu m) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DRPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52A/W and dark current of 70nA (when V-ce=1V) were obtained. |
| ISBN: 978-1-4244-3901-0 |
| Record 19 of 68 |
| Author(s): Zhang, YX (Zhang, Y. X.); Liao, ZY (Liao, Z. Y.); Sun, Y (Sun, Y.); Chen, WX (Chen, W. X.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) |
| Book Group Author(s): IEEE |
| Title: Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes |
| Source: 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2: 685-687 2008 |
| Conference Title: IEEE PhotonicsGlobal at Singapore |
| Conference Date: DEC 08-11, 2008 |
| Conference Location: Singapore, SINGAPORE |
| Abstract: In this paper, an evanescently coupled uni-traveling carrier photodiodes (EC-UTC-PDs) have been fabricated and investigated, which can benefit from the incorporation of a multimode diluted waveguide of appropriate length with experiment-simulation comparison. A high responsibvity of 0.68 A/W at 1.55-mu m without an anti-reflection coating, -1 dB compression current of more than 19 mA, and a large -1 dB vertical alignment tolerance of 2.2 mu m were achieved. |
| ISBN: 978-1-4244-3901-0 |
| Record 20 of 68 |
| Author(s): Zhao, C (Zhao, Chao); Chen, YH (Chen, Yonghai); Xu, B (Xu, Bo); Tang, CG (Tang, Chenguang); Wang, ZG (Wang, Zhanguo) |
| Editor(s): Cho, YH; Kim, EK |
| Title: Morphology and wetting layer properties of InAs/GaAs nanostructures |
| Source: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 6 (4): 789-792 2009 |
| Book series title: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS |
| Conference Title: 5th International Conference on Semiconductor Quantum Dots |
| Conference Date: MAY 11-16, 2008 |
| Conference Location: Gyeongju, SOUTH KOREA |
| Abstract: In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| ISSN: 1610-1634 |
| Record 21 of 68 |
| Author(s): Ji, HM (Ji, Hai-Ming); Yang, T (Yang, Tao); Cao, YL (Cao, Yu-Lian); Ma, WQ (Ma, Wen-Quan); Cao, Q (Cao, Qing); Chen, LH (Chen, Liang-Hui) |
| Editor(s): Cho, YH; Kim, EK |
| Title: Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers |
| Source: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 6 (4): 948-951 2009 |
| Book series title: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS |
| Conference Title: 5th International Conference on Semiconductor Quantum Dots |
| Conference Date: MAY 11-16, 2008 |
| Conference Location: Gyeongju, SOUTH KOREA |
| Abstract: A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| ISSN: 1610-1634 |
| Record 22 of 68 |
| Author(s): Wang, N (Wang, Ningjuan); Li, N (Li, Ning); Liu, ZL (Liu, Zhongli); Yu, F (Yu, Fang); Li, GH (Li, Guohua) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Fabrication of improved FD SOIMOSFETs for suppressing edge effect |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 231-234 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect, that is, the leakage current called hump is generated in the subthreshold region. According to different reasons for generating the edge effect, rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully. |
| ISBN: 978-1-4244-2185-5 |
| Record 23 of 68 |
| Author(s): Wang, Y (Wang, Ying); Han, WH (Han, Weihua); Yang, X (Yang, Xiang); Chen, JJ (Chen, Jianjun); Yang, FH (Yang, Fuhua) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 393-395 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE. |
| ISBN: 978-1-4244-2185-5 |
| Record 24 of 68 |
| Author(s): Chen, YH (Chen, Yonghai); Tang, CH (Tang, Chenguang); Xu, B (Xu, Bo); Jin, P (Jin, Peng); Wang, ZG (Wang, Zhanguo) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 673-676 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540 degrees C. |
| ISBN: 978-1-4244-2185-5 |
| Record 25 of 68 |
| Author(s): Ji, G (Ji, Gang); Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Liu, XF (Liu, Xingfang); Zhao, YM (Zhao, Yongmei); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun); Zeng, YP (Zeng, Yiping) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: High epitaxial growth rate of 4H-SiC using TCS as silicon precursor |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 696-698 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area. |
| ISBN: 978-1-4244-2185-5 |
| Record 26 of 68 |
| Author(s): Yin, HB (Yin, Haibo); Wang, XL (Wang, Xiaoliang); Hu, GX (Hu, Guoxin); Ran, JX (Ran, Junxue); Xiao, HL (Xiao, Hongling); Li, JM (Li, Jinmin) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 710-713 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A detailed reaction-tran sport model was studied in a showerhead reactor for metal organic chemical vapor deposition of GaN film by using computational fluid dynamics simulation. It was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth, and thin temperature gradient above the suscptor can increase the film deposition rate. By above-mentioned research, we can employ higher h (the distance from the susceptor to the inlet), P (operational pressure) and the rate of susceptor rotation to improve the film growth. |
| ISBN: 978-1-4244-2185-5 |
| Record 27 of 68 |
| Author(s): Yan, JC (Yan, Jianchang); Wang, JX (Wang, Junxi); Liu, Z (Liu, Zhe); Liu, NX (Liu, Naixin); Li, JM (Li, Jinmin) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 714-717 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the At mole fraction was high. |
| ISBN: 978-1-4244-2185-5 |
| Record 28 of 68 |
| Author(s): Huang, BJ (Huang, BeiJu); XuZhang (XuZhang); ZanDong (ZanDong); WeiWang (WeiWang); Chen, HD (Chen, HongDa) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 985-987 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit. |
| ISBN: 978-1-4244-2185-5 |
| Record 29 of 68 |
| Author(s): Wang, LC (Wang, Liangchen); Yi, XY (Yi, Xiaoyan); Wang, XD (Wang, Xiaodong); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Combined transparent electrodes for high power GaN-based LEDs with long life time |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1051-1053 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: In this paper fabrication of high power light emitting diodes (LEDs) with combined transparent electrodes on both P-GaN and N-GaN have been demonstrated. Simulation and experimental results show that comparing with traditional metal N electrodes the efficacy of LEDs with transparent N electrode is increased by more than 10% and it is easier in process than the other techniques. Further more, combining the transparent electrodes with dielectric anti-reflection film, the extraction efficiency can be improved by 5%. At the same time, the transparent electrodes were protected by the dielectric film and the reliability of LEDs can be improved. |
| ISBN: 978-1-4244-2185-5 |
| Record 30 of 68 |
| Author(s): Tang, J (Tang, Jian); Wang, XL (Wang, Xiaoliang); Chen, TS (Chen, Tangsheng); Xiao, HL (Xiao, Hongling); Ran, JX (Ran, Junxue); Zhang, ML (Zhang, Minglan); Hu, GX (Hu, Guoxin); Feng, C (Feng, Chun); Hou, QF (Hou, Qifeng); Wei, M (Wei, Meng); Li, JM (Li, Jinmin); Wang, ZG (Wang, Zhanguo) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1106-1109 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved. |
| ISBN: 978-1-4244-2185-5 |
| Record 31 of 68 |
| Author(s): Ma, HP (Ma, Heping); Yuan, F (Yuan, Fang); Chen, B (Chen, Bei); Shi, Y (Shi, Yin); Dai, FF (Dai, Fa Foster) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Design of Low Power Multi-Standard Active-RC Filter for WLAN and DVB-H |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1605-1608 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: In this paper, a low-power, highly linear, integrated, active-RC filter exhibiting a multi-standard (IEEE 802.11a/b/g and DVB-H) application and bandwidth (3MHz, 4MHz, 9.5MHz) is present. The filter exploits digitally-controlled polysilicon resister banks and an accurate automatic tuning scheme to account for process and temperature variations. The automatic frequency calibration scheme provides better than 3% corner frequency accuracy. The Butterworth filter is design for receiver (WLAN and DVB-H mode) and transmitter (WLAN mode). The filter dissipation is 3.4 mA in RX mode and 2.3 mA (only for one path) in TX mode from 2.85-V supply. The dissipation of calibration consumes 2mA. The circuit has been fabricated in a 0.35um 47-GHz SiGe BiCMOS technology, the receiver and transmitter occupy 0.28-mm(2) and 0.16-mm(2) (calibration circuit excluded), respectively. |
| ISBN: 978-1-4244-2185-5 |
| Record 32 of 68 |
| Author(s): Jia, HL (Jia, Hailong); Ren, T (Ren, Tong); Lin, M (Lin, Min); Chen, FX (Chen, Fangxiong); Shi, Y (Shi, Yin); Dai, FF (Dai, Foster F.) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: A 5.6-mW Power Dissipation CMOS Frequency Synthesizer for L1/L2 Dual-Band GPS Application |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1629-1632 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier. |
| ISBN: 978-1-4244-2185-5 |
| Record 33 of 68 |
| Author(s): Chen, FX (Chen, Fangxiong); Lin, M (Lin, Min); Jia, HL (Jia, Hailong); Shi, Y (Shi, Yin) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: A Complex BPF with On Chip Auto-tuning Architecture for Low-IF Receivers |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1657-1660 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A 3(rd) order complex band-pass filter (BPF) with auto-tuning architecture is proposed in this paper. It is implemented in 0.18 mu m standard CMOS technology. The complex filter is centered at 4.092MHz with bandwidth of 2.4MHz. The in-band 3(rd) order harmonic input intercept point (IIP3) is larger than 19dBm, with 50 Omega as the source impedance. The input referred noise is about 80 mu V-rms. The RC tuning is based on Binary Search Algorithm (BSA) with tuning accuracy of 3%. The chip area of the tuning system is 0.28x0.22mm(2), less than 1/8 of that of the main-filter which is 0.92x0.59mm(2). After tuning is completed, the tuning system will be turned off automatically to save power and to avoid interference. The complex filter consumes 2.6mA with a 1.8V power supply. |
| ISBN: 978-1-4244-2185-5 |
| Record 34 of 68 |
| Author(s): Chen, B (Chen, Bei); Chen, FX (Chen, Fangxiong); Ma, HP (Ma, Heping); Shi, Y (Shi, Yin); Dai, FF (Dai, Fa Foster) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: A widely tunable continuous-time LPF for a direct conversion DBS Tuner |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1729-1732 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in a 0.35um SiGe BiCMOS technology. The filter's -3dB cutoff frequency f(0) can be tuned from 4MHz to 40MHz. A novel translinear transconductor (Gm) cell is used to implement the widely tunable and high linear filter. The filter has -0.5dB passband gain, 28nV/Hz(1/2) input referred noise, -2dBVrms passband IIP3, 24dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 16mA (with f(0)=20MHz) from 3.3 V supply, and occupy an area of 0.45 mm(2). |
| ISBN: 978-1-4244-2185-5 |
| Record 35 of 68 |
| Author(s): Zhang, X (Zhang, Xu); Pei, WH (Pei, Weihua); Huang, BJ (Huang, Beiju); Chen, HD (Chen, Hongda) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Neuro-Stimulus Chip with Photodiodes Array for Sub-retinal Implants |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1749-1752 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A prototype neuro-stimulus chip for sub-retinal implants in blind patients affected by Age-related Macular Degeneration (AMD) or Retinitis Pigmentosa (RP) is presented in this paper. This retinal prosthetic chip was designed to replace the degenerated photoreceptor cells, and in order to stimulate directly the remaining healthy layers of retinal neurons. The current stimulus circuits are monolithic integrated with photodiodes (PD) array, which can convert the illumination on the eyes into bi-phasic electrical pulses. In addition, a novel charge cancellation circuit is used to discharge the electrodes for medical safty. The prototype chip is designed and fabricated in HJTC 0.18 mu m N-well CMOS 1P6M Mix-signal process, with a +/- 2.5 V dual voltage power supply. |
| ISBN: 978-1-4244-2185-5 |
| Record 36 of 68 |
| Author(s): Cao, XD (Cao Xiaodong); Ni, WN (Ni Weining); Yuan, L (Yuan Ling); Hao, ZK (Hao Zhikun); Shi, Y (Shi Yin) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: A Compact Direct Digital Frequency Synthesizer for System-on-chip |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1855-1858 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A compact direct digital frequency synthesizer (DDFS) for system-on-chip (SoC) is developed in this paper. For smaller chip size and lower power consumption, the phase to sine mapping data is compressed by using sine symmetry technique, sine-phase difference technique, quad line approximation (QLA) technique and quantization and error read only memory (QE-ROM) technique. The ROM size is reduced by 98 % using the techniques mentioned above. A compact DDFS chip with 32-bit phase storage depth and a 10-bit on-chip digital to analog converter(DAC) has been successfully implemented using standard 0.35um CMOS process. The core area of the DDFS is 1.6mm(2). It consumes 167 mW at 3.3V, and its spurious free dynamic range (SFDR) is 61dB. |
| ISBN: 978-1-4244-2185-5 |
| Record 37 of 68 |
| Author(s): Liu, SL (Liu, Silin); Hao, ZK (Hao, Zhikun); Ma, HP (Ma, Heping); Yuan, L (Yuan, Ling); Shi, Y (Shi, Yin) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: A Fast-Locking Phase-Locked Loop Using a Seven-State Phase Frequency Detector |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 1996-1999 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A seven-state phase frequency detector (S.S PFD) is proposed for fast-locking charge pump based phase-locked loops (CPPLLs) in this paper. The locking time of the PLL can be significantly reduced by using the seven-state PFD to inject more current into the loop filter. In this stage, the bandwidth of the PLL is increased or decreased to track the phase difference of the reference signal and the feedback signal. The proposed architecture is realized in a standard 0.35 mu m 2P4M CMOS process with a 3.3V supply voltage. The locking time of the proposed PLL is 1.102 mu s compared with the 2.347 mu s of the PLL based on continuous-time PFD and the 3.298 mu s of the PLL based on the pass-transistor tri-state PFD. There are 53.05% and 66.59% reductions of the locking time. The simulation results and the comparison with other PLLs demonstrate that the proposed seven-state PFD is effective to reduce locking time. |
| ISBN: 978-1-4244-2185-5 |
| Record 38 of 68 |
| Author(s): Yang, ZC (Yang, Zhichao); Chen, SL (Chen, Stanley L.); Liu, ZL (Liu, Zhongli) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Design and Verification of the Programming Circuit in an Application-Specific FPGA |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 2039-2042 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: In this paper we present a methodology and its implementation for the design and verification of programming circuit used in a family of application-specific FPGAs that share a common architecture. Each member of the family is different either in the types of functional blocks contained or in the number of blocks of each type. The parametrized design methodology is presented here to achieve this goal. Even though our focus is on the programming circuitry that provides the interface between the FPGA core circuit and the external programming hardware, the parametrized design method can be generalized to the design of entire chip for all members in the FPGA family. The method presented here covers the generation of the design RTL files and the support files for synthesis, place-and-route layout and simulations. The proposed method is proven to work smoothly within the complete chip design methodology. We will describe the implementation of this method to the design of the programming circuit in details including the design flow from the behavioral-level design to the final layout as well as the verification. Different package options and different programming modes are included in the description of the design. The circuit design implementation is based on SMIC 0.13-micron CMOS technology. |
| ISBN: 978-1-4244-2185-5 |
| Record 39 of 68 |
| Author(s): Zhang, Q (Zhang, Qi); Li, YL (Li, Yunlong); Wu, NJ (Wu, Nanjian) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: A Novel Low-Power Digital Baseband Circuit for UHF RFID Tag with Sensors |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 2120-2123 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A novel low-power digital baseband circuit for UHF RFID tag with sensors is presented in this paper. It proposes a novel baseband architecture and a new operating scheme to fulfill the sensor functions and to reduce power consumption. It is also compatible with the EPC C1G2 UHF RFID protocol. It adopts some advanced low power techniques for system design and circuit design: adaptive clock-gating, multi-clock domain and asynchronous circuit. The baseband circuit is implemented in 0.18um 1P3M standard CMOS process. ne chip area is 0.28 mm(2) excluding test pads. Its power consumption is 25uW under 1.1V power supply. |
| ISBN: 978-1-4244-2185-5 |
| Record 40 of 68 |
| Author(s): Zhang, K (Zhang, Kun); Yu, HM (Yu, Hongmin); Chen, SL (Chen, Stanley L.); Liu, ZL (Liu, Zhongli) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: A Synthesis Tool for a Tile-Based Heterogeneous FPGA |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 2321-2324 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: A multi-mode logic cell architecture in a tile-based heterogeneous FPGA is proposed, and a logic synthesis tool, called Vsyn, based on this architecture is presented. The logic cell architecture design and its synthesis tool development are strongly influencing each other. Any feature or parameter from one needs to be fully exercised and verified on the other. In this paper, we presented experimental results based MCNC benchmarks to show that the integration of the synthesis tool and the FPGA architecture can achieve high performance in the targeted FPGA applications. In addition, Vsyn can also target embedded special-purpose macros for the heterogeneous FPGA. |
| ISBN: 978-1-4244-2185-5 |
| Record 41 of 68 |
| Author(s): Liu, YF (Liu, Yunfei); Xie, J (Xie, Jing); Yang, JL (Yang, Jinling); Tang, LJ (Tang, Longjuan); Yang, FH (Yang, Fuhua) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 2379-2382 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees C and annealed at 1000 degrees C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and bigh-f micro-mechanical disk resonators. |
| ISBN: 978-1-4244-2185-5 |
| Record 42 of 68 |
| Author(s): Zhao, YM (Zhao, Yongmei); Ning, J (Ning, Jin); Sun, GS (Sun, Guosheng); Liu, XF (Liu, Xingfang); Wang, L (Wang, Liang); Ji, G (Ji, Gang); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun); Li, JM (Li, Jinmin); Yang, FH (Yang, Fuhua) |
| Editor(s): Yu, M; An, X |
| Book Author(s): Huang, R |
| Title: Simulation and fabrication of the SiC-based clamped-clamped filter |
| Source: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4: 2524-2527 2008 |
| Conference Title: 9th International Conference on Solid-State and Integrated-Circuit Technology |
| Conference Date: OCT 20-23, 2008 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: In this paper, the SiC-based clamped-clamped filter was designed and fabricated. The filter was composed of two clamped-clamped beam micromechanical resonators coupled by a spring coupling beam. Structural geometries, including the length and width of the resonator beam and coupling beam, were optimized by simulation for high frequency and high Q, under the material properties of SiC. The vibrating modes for the designed filter structure were analyzed by finite element analysis (FEA) method. For the optimized structure, the geometries of resonator beams and coupling beams, as well as the coupling position, the SiC-based clamped-clamped filter was fabricated by surface micromaching technology. |
| ISBN: 978-1-4244-2185-5 |
| Record 43 of 68 |
| Author(s): Zhao, L (Zhao, Lan); Lu, ZX (Lu, Zhengxiong); Cheng, CJ (Cheng, Caijing); Zhao, DG (Zhao, Degang); Zhu, JJ (Zhu, Jianjun); Sun, BJ (Sun, Baojuan); Qu, B (Qu, Bo); Zhang, XF (Zhang, Xiangfeng); Sun, WG (Sun, Weiguo) |
| Editor(s): Gu, ZW; Han, YF; Pan, FH; Wang, XT; Weng, D; Zhou, SX |
| Title: Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films |
| Source: MATERIALS RESEARCH, PTS 1 AND 2, 610-613: 598-603 Part 1-2 2009 |
| Book series title: MATERIALS SCIENCE FORUM |
| Conference Title: International Materials Research Conference |
| Conference Date: JUN 09-12, 2008 |
| Conference Location: Chongqing, PEOPLES R CHINA |
| Abstract: The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be. |
| ISSN: 0255-5476 |
| Record 44 of 68 |
| Author(s): Yu, JZ (Yu, Jinzhong); Han, GQ (Han, Genquan) |
| Editor(s): Stutzmann, M |
| Title: Si based quantum cascade structure: from energy band structures design to materials growth |
| Source: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3, 6 (3): 704-706 2009 |
| Book series title: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS |
| Conference Title: 3rd Sino-German Symposium on Silicon Age - Silicon for Microelectronics, Photonics and Photovoltacis |
| Conference Date: JUN 09-14, 2008 |
| Conference Location: Hangzhou, PEOPLES R CHINA |
| Abstract: In this paper, we propose an n-type vertical transition bound-to-continuum Ge/SiGe quantum cascade structure utilizing electronic quantum wells in the L and Gamma valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. The Gamma-L intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. We also show that high quality Si1-yGey pseudosubstrate is obtained by thermal annealing of Si1-xGex/Ge/Si structure. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| ISSN: 1610-1634 |
| Record 45 of 68 |
| Author(s): Shen, WJ (Shen, Wenjuan (Janet)); Mohrdiek, S (Mohrdiek, Stefan); Guo, B (Guo, Bing (Bruce)); Pliska, T (Pliska, Tomas); Ives, M (Ives, Mark); Quinlan, S (Quinlan, Shaun); Grace, W (Grace, Warren); Miller, A (Miller, Andrew); Goodall, T (Goodall, Thomas); Greatrex, J (Greatrex, Jeffrey); Ma, RCW (Ma, Robert Cann Wen (Wendy)) |
| Book Group Author(s): AOE |
| Title: Uncooled Submarine Pump Laser Module at 980 nm |
| Source: AOE 2007: ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, CONFERENCE PROCEEDINGS: 287-289 2008 |
| Conference Title: Asia Optical Fiber Communication and Optoelectronic Exposition and Conference |
| Conference Date: OCT 17-19, 2007 |
| Conference Location: Shanghai, PEOPLES R CHINA |
| Abstract: We present a new generation 980 nm submarine pump module that consists of a hermitically sealed 8-pin ceramic MiniDIL package without thermo-electric cooler. |
| ISBN: 978-0-9789217-3-6 |
| Record 46 of 68 |
| Author(s): Wang, DZ (Wang Da-zheng); Feng, XM (Feng Xiao-ming); Wang, YG (Wang Yong-gang); Wang, CL (Wang cui-luan); Lan, YS (Lan Yong-sheng); Liu, SP (Liu Su-ping); Ma, XY (Ma Xiao-yu) |
| Book Group Author(s): AOE |
| Title: A New Technique for Side Pumping of Double-Clad Fiber Lasers |
| Source: AOE 2007: ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, CONFERENCE PROCEEDINGS: 436-438 2008 |
| Conference Title: Asia Optical Fiber Communication and Optoelectronic Exposition and Conference |
| Conference Date: OCT 17-19, 2007 |
| Conference Location: Shanghai, PEOPLES R CHINA |
| Abstract: We report a new technique, called SAP, for side pumping of double-clad, rare-earth-doped fiber lasers using fiber-coupled pump sources. The highest coupling efficiency can even exceed 92% in theory with this structure. |
| ISBN: 978-0-9789217-3-6 |
| Record 47 of 68 |
| Author(s): Wang, H (Wang, Huan); Zhu, HL (Zhu, Hongliang); Cheng, YB (Cheng, Yuanbing); Chen, D (Chen, Dingbo); Zhang, W (Zhang, Wei); Wang, LS (Wang, Liesong); Zhang, YX (Zhang, Yunxiao); Sun, Y (Sun, Yu); Wang, W (Wang, Wei) |
| Book Group Author(s): AOE |
| Title: An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser |
| Source: AOE 2007: ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, CONFERENCE PROCEEDINGS: 490-492 2008 |
| Conference Title: Asia Optical Fiber Communication and Optoelectronic Exposition and Conference |
| Conference Date: OCT 17-19, 2007 |
| Conference Location: Shanghai, PEOPLES R CHINA |
| Abstract: An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser The typical threshold current of the EML is 18mA, and the output power is 5.6mW at EAM facet. |
| ISBN: 978-0-9789217-3-6 |
| Record 48 of 68 |
| Author(s): Dai, L (Dai, Lei); Li, WJ (Li, Weijun); Chen, X (Chen, Xu); Jin, XX (Jin, Xiaoxian); Qu, YF (Qu, Yanfeng) |
| Editor(s): Ma, J; Yin, YL; Yu, J; Zhou, SG |
| Title: Research of Face Detection System Applied for Detecting Faces with Complex Background and Illumination |
| Source: FIFTH INTERNATIONAL CONFERENCE ON FUZZY SYSTEMS AND KNOWLEDGE DISCOVERY, VOL 4, PROCEEDINGS: 106-109 2008 |
| Conference Title: 5th International Conference on Fuzzy Systems and Knowledge Discovery |
| Conference Date: OCT 18-20, 2008 |
| Conference Location: Jinan, PEOPLES R CHINA |
| Abstract: An effective face detection system used for detecting multi pose frontal face in gray images is presented. Image preprocessing approaches are applied to reduce the influence of the complex illumination. Eye-analog pairing and improved multiple related template matching are used to glancing and accurate face detecting, respectively. To shorten the time cost of detecting process, we employ prejudge rules in checking candidate image segments before template matching. Test by our own face database with complicated illumination and background, the system has high calculation speed and illumination independency, and obtains good experimental results. |
| ISBN: 978-0-7695-3305-6 |
| Record 49 of 68 |
| Author(s): Shang, JZ (Shang, J. Z.); Zhang, BP (Zhang, B. P.); Mao, MH (Mao, M. H.); Cai, LE (Cai, L. E.); Zhang, JY (Zhang, J. Y.); Fang, ZL (Fang, Z. L.); Liu, BL (Liu, B. L.); Yu, JZ (Yu, J. Z.); Wang, QM (Wang, Q. M.); Kusakabe, K (Kusakabe, K.); Ohkawa, K (Ohkawa, K.) |
| Title: Growth behavior of AlInGaN films |
| Source: JOURNAL OF CRYSTAL GROWTH, 311 (3): 474-477 JAN 15 2009 |
| Conference Title: 4th Asian Conference on Crystal Growth and Crystal Technology |
| Conference Date: MAY 21-24, 2008 |
| Conference Location: Sendai, JAPAN |
| Conference Host: Tohoku Univ, Katahira Campus |
| Abstract: The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved. |
| ISSN: 0022-0248 |
| DOI: 10.1016/j.jcrysgro.2008.09.012 |
| Record 50 of 68 |
| Author(s): Zhan, F (Zhan, F.); Huang, SS (Huang, S. S.); Niu, ZC (Niu, Z. C.); Ni, HQ (Ni, H. Q.); Xiong, YH (Xiong, Y. H.); Fang, ZD (Fang, Z. D.); Zhou, HY (Zhou, H. Y.); Luo, Y (Luo, Y.) |
| Title: Desorption and Ripening of Low Density InAs Quantum Dots |
| Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 9 (2): 844-847 Sp. Iss. SI FEB 2009 |
| Conference Title: 6th International Conference on Nanoscience and Technology |
| Conference Date: JUN 04-06, 2007 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer. |
| ISSN: 1533-4880 |
| DOI: 10.1166/jnn.2009.C037 |
| Record 51 of 68 |
| Author(s): Yu, HJ (Yu, Hejun); Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude); Chen, SW (Chen, Shaowu) |
| Title: Design and Fabrication of a Photonic Crystal Channel Drop Filter Based on an Asymmetric Silicon-on-Insulator Slab |
| Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 9 (2): 974-977 Sp. Iss. SI FEB 2009 |
| Conference Title: 6th International Conference on Nanoscience and Technology |
| Conference Date: JUN 04-06, 2007 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: We report on the design and fabrication of a photonic crystal (PC) channel drop filter based on an asymmetric silicon-on-insulator (SOI) slab. The filter is composed of two symmetric stick-shape micro-cavities between two single-line-defect (W1) waveguides in a triangular lattice, and the phase matching condition for the filter to improve the drop efficiency is satisfied by modifying the positions and radii of the air holes around the micro-cavities. A sample is then fabricated by using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching processes. The measured 0 factor of the filter is about 1140, and the drop efficiency is estimated to be 73% +/- 5% by fitting the transmission spectrum. |
| ISSN: 1533-4880 |
| DOI: 10.1166/jnn.2009.C066 |
| Record 52 of 68 |
| Author(s): Wang, CX (Wang, Chunxia); Kan, Q (Kan, Qiang); Xu, XS (Xu, Xingsheng); Du, W (Du, Wei); Chen, HD (Chen, Hongda) |
| Title: Experimental Demonstration on Structure-Parameter Dependence of Photonic Crystal Optical Spectrum |
| Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 9 (2): 1045-1047 Sp. Iss. SI FEB 2009 |
| Conference Title: 6th International Conference on Nanoscience and Technology |
| Conference Date: JUN 04-06, 2007 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: We present fabrication and experimental measurement of a series of photonic crystal waveguides and coupled structure of PC waveguide and PC micro-cavity. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-holes single-line-defect waveguide. We fabricated these devices on a silicon-on-insulator substrate and characterized them using tunable laser source. We've obtained high-efficiency light propagation and broad flat spectrum response of photonic-crystal waveguides. A sharp attenuation at photonic crystal waveguide mode edge was observed for most structures. The edge of guided band is shifted about 31 nm with the 10 nm increase of lattice constant. Mode resonance was observed in coupled structure. Our experimental results indicate that the optical spectra of photonic crystal are very sensitive to structure parameters. |
| ISSN: 1533-4880 |
| DOI: 10.1166/jnn.2009.C083 |
| Record 53 of 68 |
| Author(s): Wu, BP (Wu, B. P.); Wu, DH (Wu, D. H.); Xiong, YH (Xiong, Y. H.); Huang, SS (Huang, S. S.); Ni, HQ (Ni, H. Q.); Xu, YQ (Xu, Y. Q.); Niu, ZC (Niu, Z. C.) |
| Title: Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers |
| Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 9 (2): 1333-1336 Sp. Iss. SI FEB 2009 |
| Conference Title: 6th International Conference on Nanoscience and Technology |
| Conference Date: JUN 04-06, 2007 |
| Conference Location: Beijing, PEOPLES R CHINA |
| Abstract: In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased. |
| ISSN: 1533-4880 |
| DOI: 10.1166/jnn.2009.C150 |
| Record 54 of 68 |
| Author(s): Sun, GS (Sun, Guosheng); Zhao, YM (Zhao, Yongmei); Wang, L (Wang, Liang); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun); Liu, XF (Liu, Xingfang); Ji, G (Ji, Gang); Zeng, YP (Zeng, Yiping) |
| Editor(s): Suzuki, A; Okumura, H; Kimoto, T; Fuyuki, T; Fukuda, K; Nishizawa, S |
| Title: In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD |
| Source: SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603: 147-150 Part 1-2 2009 |
| Book series title: MATERIALS SCIENCE FORUM |
| Conference Title: International Conference on Silicon Carbide and Related Materials |
| Conference Date: OCT 14-19, 2007 |
| Conference Location: Otsu, JAPAN |
| Abstract: The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained. |
| ISSN: 0255-5476 |
| Record 55 of 68 |
| Author(s): Zhao, YM (Zhao, Y. M.); Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Li, JY (Li, J. Y.); Zhao, WS (Zhao, W. S.); Wang, L (Wang, L.); Li, JM (Li, J. M.); Zeng, YP (Zeng, Y. P.) |
| Editor(s): Suzuki, A; Okumura, H; Kimoto, T; Fuyuki, T; Fukuda, K; Nishizawa, S |
| Title: Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer |
| Source: SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 600-603: 251-254 Part 1-2 2009 |
| Book series title: MATERIALS SCIENCE FORUM |
| Conference Title: International Conference on Silicon Carbide and Related Materials |
| Conference Date: OCT 14-19, 2007 |
| Conference Location: Otsu, JAPAN |
| Abstract: Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements. |
| ISSN: 0255-5476 |
| Record 56 of 68 |
| Author(s): Jian, HF (Jian Haifang); Shi, Y (Shi Yin) |
| Book Group Author(s): IEEE |
| Title: AN EFFICIENT ITERATIVE DFT-BASED CHANNEL ESTIMATION FOR MIMO-OFDM SYSTEMS ON MULTIPATH CHANNELS |
| Source: 2008 THIRD INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND NETWORKING IN CHINA, VOLS 1-3: 42-46 2008 |
| Conference Title: 3rd International Conference on Communications and Networking in China |
| Conference Date: AUG 25-27, 2008 |
| Conference Location: Hangzhou, PEOPLES R CHINA |
| Abstract: In this paper, an efficient iterative discrete Fourier transform (DFT) -based channel estimator with good performance for multiple-input and multiple-output orthogonal frequency division multiplexing (MIMO-OFDM) systems such as IEEE 802.11n which retain some sub-carriers as null sub-carriers (or virtual carriers) is proposed. In order to eliminate the mean-square error (MSE) floor effect existed in conventional DFT-based channel estimators, we proposed a low-complexity method to detect the significant channel impulse response (CIR) taps, which neither need any statistical channel information nor a predetermined threshold value. Analysis and simulation results show that the proposed method has much better performance than conventional DFT-based channel estimators and without MSE floor effect. |
| ISBN: 978-1-4244-2373-6 |
| Record 57 of 68 |
| Author(s): Xu, XJ (Xu, Xuejun); Chen, SW (Chen, Shaowu); Li, ZY (Li, Zhiyong); Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong) |
| Book Group Author(s): IEEE |
| Title: SOI submicron rib waveguides: Design, Fabrication and Characterization |
| Source: 2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS: 137-139 2008 |
| Conference Title: 5th IEEE International Conference on Group IV Photonics |
| Conference Date: SEP 17-19, 2008 |
| Conference Location: Sorrento, ITALY |
| Abstract: We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8dB/mm and bend loss of 0.14dB/90 degrees for bends with radius of 5 mu m. |
| ISBN: 978-1-4244-1769-8 |
| Record 58 of 68 |
| Author(s): Cheng, BW (Cheng, B. W.); Xue, HY (Xue, H. Y.); Hu, D (Hu, D.); Han, GQ (Han, G. Q.); Zeng, YG (Zeng, Y. G.); Bai, AQ (Bai, A. Q.); Xue, CL (Xue, C. L.); Luo, LP (Luo, L. P.); Zuo, YH (Zuo, Y. H.); Wang, QM (Wang, Q. M.) |
| Book Group Author(s): IEEE |
| Title: Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer |
| Source: 2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS: 140-142 2008 |
| Conference Title: 5th IEEE International Conference on Group IV Photonics |
| Conference Date: SEP 17-19, 2008 |
| Conference Location: Sorrento, ITALY |
| Abstract: A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees C. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600 degrees C with a threading dislocation density of similar to 1x10(5)cm(-2). According to channeling and random Rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33nm. |
| ISBN: 978-1-4244-1769-8 |
| Record 59 of 68 |
| Author(s): Huang, QZ (Huang, Qingzhong); Xiao, X (Xiao, Xi); Li, YT (Li, Yuntao); Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong) |
| Book Group Author(s): IEEE |
| Title: Characteristics of SOI rib waveguide microring and racetrack resonators |
| Source: 2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS: 143-145 2008 |
| Conference Title: 5th IEEE International Conference on Group IV Photonics |
| Conference Date: SEP 17-19, 2008 |
| Conference Location: Sorrento, ITALY |
| Abstract: Characteristics of microring/racetrack resonators, in submicron SOI rib waveguides, have been investigated. The effects of waveguide dimensions, coupler design, roughness, and oxide cladding are considered. Moreover, guided mode, loss and dispersion of such waveguides are analyzed. |
| ISBN: 978-1-4244-1769-8 |
| Record 60 of 68 |
| Author(s): Han, WH (Han, Weihua); Yang, X (Yang, Xiang); Wang, Y (Wang, Ying); Yang, FH (Yang, Fuhua); Yu, JZ (Yu, Jinzhong) |
| Book Group Author(s): IEEE |
| Title: Fabrication method of silicon nanostructures by anisotropic etching |
| Source: 2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS: 146-148 2008 |
| Conference Title: 5th IEEE International Conference on Group IV Photonics |
| Conference Date: SEP 17-19, 2008 |
| Conference Location: Sorrento, ITALY |
| Abstract: A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique. |
| ISBN: 978-1-4244-1769-8 |
| Record 61 of 68 |
| Author(s): Yu, JZ (Yu, Jinzhong); Yu, HJ (Yu, Hejun); Zhu, Y (Zhu, Yu); Yu, YD (Yu, Yude) |
| Book Group Author(s): IEEE |
| Title: Theoretical and Experimental Studies of an Ultra-compact Photonic Crystal Corner Mirror Based on Silicon-On-Insulator |
| Source: 2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS: 222-224 2008 |
| Conference Title: 5th IEEE International Conference on Group IV Photonics |
| Conference Date: SEP 17-19, 2008 |
| Conference Location: Sorrento, ITALY |
| Abstract: An ultra-compact silicon-on-insulator based photonic crystal corner mirror is designed and optimized. A sample is then successfully fabricated with extra losses 1.1 +/- 0.4dB for transverse-electronic (M) polarization for wavelength range of 1510-1630nm. |
| ISBN: 978-1-4244-1769-8 |
| Record 62 of 68 |
| Author(s): Zhou, JP (Zhou, Jian-ping); Shi, Z (Shi, Zhan); He, HC (He, Hong-cai); Nan, CW (Nan, Ce-Wen) |
| Title: Magnetic properties of ZnO-doped cobalt ferrite |
| Source: JOURNAL OF ELECTROCERAMICS, 21 (1-4): 681-685 Sp. Iss. SI DEC 2008 |
| Conference Title: 4th Asian Meeting on Electroceramics (AMEC-4) |
| Conference Date: JUN 27-30, 2005 |
| Conference Location: Hangzhou, PEOPLES R CHINA |
| Abstract: The cobalt ferrites with chemical composition Co1+xZnxFe2-2xO4 (r=0.0, 0.1, 0.2, 0.4) were obtained with conventional solid reaction. The ZnO-doped samples have lower lattice constant than CoFe2O4 by adjusting Co ions to the octahedral sites. The results show that doping ZnO could extremely improve the magnetic properties. In comparison with pure CoFe2O4, the little ZnO-doped sample has higher permeability and much lower coercivity at the condition of a little decrease of magnetization saturation. Sample with x=0.1 shows evident magnetostrictive effect at the magnetic field of 30-60 mT while pure cobalt ferrite sample does not, though the saturation magnetostriction decreases. These indicate that ZnO-doping improves the magnetostrictive sensitivity of the cobalt ferrites and have potential applications in magnetoelectric devices and magnetic detector. |
| ISSN: 1385-3449 |
| DOI: 10.1007/s10832-007-9267-3 |
| Record 63 of 68 |
| Author(s): Zheng, WH (Zheng, Wanhua) |
| Editor(s): Cui, TJ; Smith, DR |
| Title: Highly efficient and tunable microlasers on photonic crystal slab |
| Source: PROCEEDINGS OF THE 2008 INTERNATIONAL WORKSHOP ON METAMATERIALS: 53-53 2008 |
| Conference Title: International Workshop on Metamaterials |
| Conference Date: NOV 09-12, 2008 |
| Conference Location: Nanjing, PEOPLES R CHINA |
| ISBN: 978-1-4244-2608-9 |
| Record 64 of 68 |
| Author(s): Xing, MX (Xing, Mingxin); Ren, G (Ren, Gang); Chen, W (Chen, Wei); Zhou, WJ (Zhou, Wenjun); Wang, HL (Wang, Hailing); Chen, LH (Chen, Linghui); Zheng, WH (Zheng, Wanhua) |
| Editor(s): Cui, TJ; Smith, DR |
| Title: Experimental investigation of slow light phenomenon in photonic crystal waveguide line defect laser |
| Source: PROCEEDINGS OF THE 2008 INTERNATIONAL WORKSHOP ON METAMATERIALS: 177-180 2008 |
| Conference Title: International Workshop on Metamaterials |
| Conference Date: NOV 09-12, 2008 |
| Conference Location: Nanjing, PEOPLES R CHINA |
| Abstract: The guide mode whose frequency locates in the band edge in photonic crystal single line defect waveguide has very low group velocity. So the confinement and gain of electromagnetic field in the band edge are strongly enhanced. Photonic crystal waveguide laser is fabricated and the slow light phenomenon is investigated. The laser is pumped by pulsed pumping light at 980nm whose duty ratio is 0.05%. The active layer in photonic crystal slab is InGaAsP multiple quantum well. Light is transimited by a photonic crystal chirp waveguide in one facet of the laser. Then the output light is coupled to a fiber and the character of laser is analysis by an optical spectrometer. It is found that single mode and multimode happens with different power of pumping light. Meanwhile the plane wave expansion and finite-difference time-domain methods are used to simulate the phenomenon of slow light. And the result of the experiment is compared with the theory which proves the slow light results in lasing oscillation. |
| ISBN: 978-1-4244-2608-9 |
| Record 65 of 68 |
| Author(s): Chen, JJ (Chen, Jianjun); Fan, ZC (Fan, Zhongchao); Yang, FH (Yang, Fuhua) |
| Editor(s): Cui, TJ; Smith, DR |
| Title: Magnetic resonant cavity composing of a three layered plasmonic nanostructure |
| Source: PROCEEDINGS OF THE 2008 INTERNATIONAL WORKSHOP ON METAMATERIALS: 204-206 2008 |
| Conference Title: International Workshop on Metamaterials |
| Conference Date: NOV 09-12, 2008 |
| Conference Location: Nanjing, PEOPLES R CHINA |
| Abstract: The magnetic-type plasmon resonant of a metal-dielectric-metal nanocavity working at the wavelength of 1.55 mu m is explored, in which the upper layer is periodically patterned with metallic nanostrip arrays. In the dielectric film layer, the magnetic energy intensity is enhanced about 1700 times when irradiated with a p-polarized plane wave. We numerically studied the dispersion of the modes and the Q-value of this periodic cavity arrays. Q value is estimated about 18 and still has room for further improvement. It provides a new type of nanocavity that exhibits a strong magnetic response. |
| ISBN: 978-1-4244-2608-9 |
| Record 66 of 68 |
| Author(s): Jiao, HJ (Jiao, HuJun); Li, F (Li, Feng); Wang, SK (Wang, Shi-Kuan); Li, XQ (Li, Xin-Qi) |
| Editor(s): Goan, HS; Chen, YN |
| Title: Solid-state qubit measurement with single electron transistors |
| Source: SOLID-STATE QUANTUM COMPUTING, PROCEEDINGS, 1074: 86-91 2008 |
| Book series title: AIP CONFERENCE PROCEEDINGS |
| Conference Title: 2nd International Workshop on Solid-State Quantum Computing/Mini-School on Quantum Information Science |
| Conference Date: JUN 23-27, 2008 |
| Conference Location: Taipei, TAIWAN |
| Abstract: In this paper we consider the continuous weak measurement of a solid-state qubit by single electron transistors (SET). For single-dot SET, we find that in nonlinear response regime the signal-to-noise ratio can violate the universal upper bound imposed quantum mechanically on any linear response detectors. We understand the violation by means of the cross-correlation of the detector currents. For double-dot SET, we discuss its robustness against wider range of temperatures, quantum efficiency, and the relevant open issues unresolved. |
| ISSN: 0094-243X |
| ISBN: 978-0-7354-0605-6 |
| Record 67 of 68 |
| Author(s): Mo, HY (Mo Huayi); Li, WJ (Li Weijun); Lai, JL (Lai Jiangliang); Dai, L (Dai Lei) |
| Book Group Author(s): IEEE Computer Soc |
| Title: Research of Face Location System Based on Human Vision Simulations |
| Source: INTERNATIONAL CONFERENCE ON INTELLIGENT COMPUTATION TECHNOLOGY AND AUTOMATION, VOL 2, PROCEEDINGS: 170-174 2008 |
| Conference Title: International Conference on Intelligent Computation Technology and Automation |
| Conference Date: OCT 20-22, 2008 |
| Conference Location: Changsha, PEOPLES R CHINA |
| Abstract: In this paper we present a robust face location system based on human vision simulations to automatically locate faces in color static images. Our method is divided into four stages. In the first stage we use a gauss low-pass filter to remove the fine information of images, which is useless in the initial stage of human vision. During the second and the third stages, our technique approximately detects the image regions, which may contain faces. During the fourth stage, the existence of faces in the selected regions is verified. Having combined the advantages of Bottom-Up Feature Based Methods and Appearance-Based Methods, our algorithm performs well in various images, including those with highly complex backgrounds. |
| ISBN: 978-0-7695-3357-5 |
| Record 68 of 68 |
| Author(s): Lu, J (Lu, J.); Bi, JF (Bi, J. F.); Wang, WZ (Wang, W. Z.); Gan, HD (Gan, H. D.); Meng, HJ (Meng, H. J.); Deng, JJ (Deng, J. J.); Zheng, HZ (Zheng, H. Z.); Zhao, JH (Zhao, J. H.) |
| Title: Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As |
| Source: IEEE TRANSACTIONS ON MAGNETICS, 44 (11): 2692-2695 Part 1 NOV 2008 |
| Conference Title: International Magnetics Conference (Intermag) |
| Conference Date: MAY 04-08, 2008 |
| Conference Location: Madrid, SPAIN |
| Abstract: We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed. |
| ISSN: 0018-9464 |
| DOI: 10.1109/TMAG.2008.2003046 |
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