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| Record 1 of 16 |
| Author(s): Huang, YZ (Huang, Yong-Zhen); Wang, SJ (Wang, Shi-Jiang); Yang, YD (Yang, Yue-De); Lin, JD (Lin, Jian-Dong); Che, KJ (Che, Kai-Jun); Xiao, JL (Xiao, Jin-Long); Du, Y (Du, Yun) |
| Title: Investigation on multiple-port microcylinder lasers based on coupled modes |
| Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25 (10): Art. No. 105005 OCT 15 2010 |
| Abstract: Microcylinder resonators with multiple ports connected to waveguides are investigated by 2D finite-difference time-domain (FDTD) simulation for realizing microlasers with multiple outputs. For a 10 mu m radius microcylinder with a refractive index of 3.2 and three 2 mu m wide waveguides, confined mode at the wavelength of 1542.3 nm can have a mode Q factor of 6.7 x 10(4) and an output coupling efficiency of 0.76. AlGaInAs/InP microcylinder lasers with a radius of 10 mu m and a 2 mu m wide output waveguide are fabricated by planar processing techniques. Continuous-wave electrically injected operation is realized with a threshold current of 4 mA at room temperature, and the jumps of output power are observed accompanying a lasing mode transformation. |
| ISSN: 0268-1242 |
| Article Number: 105005 |
| DOI: 10.1088/0268-1242/25/10/105005 |
| Record 2 of 16 |
| Author(s): Wang, J (Wang, Jing); Liu, Y (Liu, Ying); Li, YC (Li, You-Cheng) |
| Title: Magnetic silicon fullerene |
| Source: PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 12 (37): 11428-11431 2010 |
| Abstract: A metal-encapsulating silicon fullerene, Eu@Si-20, has been predicted by density functional theory to be by far the most stable fullerene-like silicon structure. The Eu@Si-20 structure is a dodecahedron with D-2h symmetry in which the europium atom occupies the center site. The calculated results show that the europium atom has a large magnetic moment of nearly 7.0 Bohr magnetons. In addition, it was found that a stable "pearl necklace" nanowire, constructed by concatenating a series of Eu@Si-20 units, with the central europium atom, retains the high spin moment. The magnetic structure of the nanowire indicates potential applications in the fields of spintronics and high-density magnetic storage. |
| ISSN: 1463-9076 |
| DOI: 10.1039/b923865d |
| Record 3 of 16 |
| Author(s): Ma, JL (Ma, J. L.); Xiong, B (Xiong, B.); Guo, L (Guo, L.); Zhao, PF (Zhao, P. F.); Zhang, L (Zhang, L.); Lin, XC (Lin, X. C.); Li, JM (Li, J. M.); Duanmu, QD (Duanmu, Q. D.) |
| Title: Low heat and high efficiency Nd:GdVO4 laser pumped by 913 nm |
| Source: LASER PHYSICS LETTERS, 7 (8): 579-582 AUG 2010 |
| Abstract: A Nd:GdVO4 crystal is pumped directly into its emitting level at 913 nm for the first time to the best of our knowledge. 3.35 W output laser emitting at 1063 nm is achieved in a 1.1 at.% Nd-doped Nd:GdVO4. The crystal absorbs pumping light of 4.30 W at 913 nm and produces a very low quantity of heat with the opto-optic conversion efficiency of 77.2%. The average slope efficiency is 81.2% from 0.21 W, at the threshold, to 4.30 W of absorbed pump power. Because of the very weakly thermal effect, the near-diffraction-limit beam is easily obtained with beam quality factor of M-2 approximate to 1.1. |
| ISSN: 1612-2011 |
| DOI: 10.1002/lapl.201010036 |
| Record 4 of 16 |
| Author(s): Zhang, L (Zhang, L.); Guo, L (Guo, L.); Xiong, B (Xiong, B.); Yan, X (Yan, X.); Sun, L (Sun, L.); Hou, W (Hou, W.); Lin, XC (Lin, X. C.); Li, JM (Li, J. M.) |
| Title: LD side-pumped high beam quality passive Q-switched and mode-locked Nd:YAG laser based on SESAM |
| Source: LASER PHYSICS, 20 (9): 1798-1801 SEP 2010 |
| Abstract: We report a LD side-pumped fundamental-mode (Mx(2) = 1.35 and My(2) = 1.27) passive Q-switched and mode-locked Nd:YAG laser based on a semiconductor saturable absorber mirror (SESAM). At a pump current of 12.5 A, the average output power of 5.68 W with 80 kHz repetition rate and 2 mu s pulse width of the Q-switched envelope was generated. The repetition rate of the mode-locked pulse within the Q-switched envelope of 88 MHz was achieved. |
| ISSN: 1054-660X |
| DOI: 10.1134/S1054660X10170196 |
| Record 5 of 16 |
| Author(s): Zhang, W (Zhang, W.); Wang, LJ (Wang, L. J.); Zhang, JC (Zhang, J. C.); Zhang, QD (Zhang, Q. D.); Li, L (Li, L.); Liu, JQ (Liu, J. Q.); Liu, FQ (Liu, F. Q.); Wang, ZG (Wang, Z. G.) |
| Title: Stable single-mode distributed feedback quantum cascade laser with surface metal grating |
| Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43 (38): Art. No. 385103 SEP 29 2010 |
| Abstract: A design of single-mode distributed feedback quantum cascade lasers (DFB-QCLs) with surface metal grating is described. A rigorous modal expansion theory is adopted to analyse the interaction between the waveguide mode and the surface plasmon wave for different grating parameters. A stable single-mode operation can be obtained in a wide range of grating depths and duty cycles. The single-mode operation of surface metal grating DFB-QCLs at room temperature for lambda = 8.5 mu m is demonstrated. The device shows a side-mode suppression ratio of above 20 dB. A linear tuning of wavelength with temperature indicates the stable single-mode operation without mode hopping. |
| ISSN: 0022-3727 |
| Article Number: 385103 |
| DOI: 10.1088/0022-3727/43/38/385103 |
| Record 6 of 16 |
| Author(s): Li, GD (Li, Guodong); Yin, H (Yin, Hong); Zhu, QS (Zhu, Qinsheng); Sakaki, H (Sakaki, Hiroyuki); Jiang, C (Jiang, Chao) |
| Title: Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (4): Art. No. 043702 AUG 15 2010 |
| Abstract: We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467520] |
| ISSN: 0021-8979 |
| Article Number: 043702 |
| DOI: 10.1063/1.3467520 |
| Record 7 of 16 |
| Author(s): Wang, J (Wang, Jing); Li, JB (Li, Jingbo); Li, SS (Li, Shu-Shen) |
| Title: Origins of magnetism in transition metal doped Cul |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (4): Art. No. 043713 AUG 15 2010 |
| Abstract: Cupric iodide is a p-type semiconductor and has a large band gap. Doping of Mn, Co, and Ni are found to make gamma-CuI ferromagnetic ground state, while Cr-doped and Fe-doped CuI systems are stabilized in antiferromagnetic configurations. The origins of the magnetic ordering are demonstrated successfully by the phenomenological band coupling model based on d-d level repulsions between the dopant ions. Furthermore, using a molecular-orbital bonding model, the electronic structures of the doped CuI are well understood. According to Heisenberg model, high-T-C may be expected for CuI:Mn and CuI:Ni if there are no native defects or other impurities. (C) 2010 American Institute of Physics. [doi:10.1063/1.3471802] |
| ISSN: 0021-8979 |
| Article Number: 043713 |
| DOI: 10.1063/1.3471802 |
| Record 8 of 16 |
| Author(s): Wang, ZG (Wang, Zhiguo); Li, JB (Li, Jingbo); Gao, F (Gao, Fei); Weber, WJ (Weber, William J.) |
| Title: Defects in gallium nitride nanowires: First principles calculations |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (4): Art. No. 044305 AUG 15 2010 |
| Abstract: Atomic configurations and formation energies of native defects in an unsaturated GaN nanowire grown along the [001] direction and with (100) lateral facets are studied using large-scale ab initio calculation. Cation and anion vacancies, antisites, and interstitials in the neutral charge state are all considered. The configurations of these defects in the core region and outermost surface region of the nanowire are different. The atomic configurations of the defects in the core region are same as those in the bulk GaN, and the formation energy is large. The defects at the surface show different atomic configurations with low formation energy. Starting from a Ga vacancy at the edge of the side plane of the nanowire, a N-N split interstitial is formed after relaxation. As a N site is replaced by a Ga atom in the suboutermost layer, the Ga atom will be expelled out of the outermost layers and leaves a vacancy at the original N site. The Ga interstitial at the outmost surface will diffuse out by interstitialcy mechanism. For all the tested cases N-N split interstitials are easily formed with low formation energy in the nanowires, indicating N-2 molecular will appear in the GaN nanowire, which agrees well with experimental findings. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3476280] |
| ISSN: 0021-8979 |
| Article Number: 044305 |
| DOI: 10.1063/1.3476280 |
| Record 9 of 16 |
| Author(s): Li, YB (Li, Yanbo); Zhang, Y (Zhang, Yang); Zeng, YP (Zeng, Yiping) |
| Title: Self-consistent analysis of AlSb/InAs high electron mobility transistor structures |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (4): Art. No. 044504 AUG 15 2010 |
| Abstract: The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3475722] |
| ISSN: 0021-8979 |
| Article Number: 044504 |
| DOI: 10.1063/1.3475722 |
| Record 10 of 16 |
| Author(s): Zhang, LX (Zhang, Lixin); Zhou, XF (Zhou, Xiang-Feng); Wang, HT (Wang, Hui-Tian); Xu, JJ (Xu, Jing-Jun); Li, JB (Li, Jingbo); Wang, EG (Wang, E. G.); Wei, SH (Wei, Su-Huai) |
| Title: Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies |
| Source: PHYSICAL REVIEW B, 82 (12): Art. No. 125412 SEP 9 2010 |
| Abstract: It is revealed from first-principles calculations that polarization-induced asymmetric distribution of oxygen vacancies plays an important role in the insulating behavior at p-type LaAlO3/SrTiO3 interface. The formation energy of the oxygen vacancy (V-O) is much smaller than that at the surface of the LaAlO3 overlayer, causing all the carriers to be compensated by the spontaneously formed V-O's at the interface. In contrast, at an n-type interface, the formation energy of V-O is much higher than that at the surface, and the V-O's formed at the surface enhance the carrier density at the interface. This explains the puzzling behavior of why the p-type interface is always insulating but the n-type interface can be conducting. |
| ISSN: 1098-0121 |
| Article Number: 125412 |
| DOI: 10.1103/PhysRevB.82.125412 |
| Record 11 of 16 |
| Author(s): Hong, T (Hong, Tao); Ran, GZ (Ran, Guang-Zhao); Chen, T (Chen, Ting); Pan, JQ (Pan, Jiao-Qing); Chen, WX (Chen, Wei-Xi); Wang, Y (Wang, Yang); Cheng, YB (Cheng, Yuan-Bing); Liang, S (Liang, Song); Zhao, LJ (Zhao, Ling-Juan); Yin, LQ (Yin, Lu-Qiao); Zhang, JH (Zhang, Jian-Hua); Wang, W (Wang, Wei); Qin, GG (Qin, Guo-Gang) |
| Title: A Selective-Area Metal Bonding InGaAsP-Si Laser |
| Source: IEEE PHOTONICS TECHNOLOGY LETTERS, 22 (15): 1141-1143 AUG 1 2010 |
| Abstract: A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized. |
| ISSN: 1041-1135 |
| DOI: 10.1109/LPT.2010.2050683 |
| Record 12 of 16 |
| Author(s): Zhao, YW (Zhao, Youwen); Zhang, R (Zhang, Rui); Zhang, F (Zhang, Fan); Dong, ZY (Dong, Zhiyuan); Yang, J (Yang, Jun) |
| Editor(s): Caldas, MJ; Studart, N |
| Title: Donor defect in P-diffused bulk ZnO single crystal |
| Source: PHYSICS OF SEMICONDUCTORS, 1199: 118-119 2009 |
| Book series title: AIP Conference Proceedings |
| Conference Title: 29th International Conference on Physics of Semiconductors |
| Conference Date: JUL 27-AUG 01, 2008 |
| Conference Location: Rio de Janeiro, BRAZIL |
| Abstract: A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed. |
| ISSN: 0094-243X |
| ISBN: 978-0-7354-0736-7 |
| Record 13 of 16 |
| Author(s): Guo, TT (Guo Ting-ting); Wang, SJ (Wang Shou-jue); Wang, HW (Wang Hong-wu); Hu, HX (Hu Hai-xiao); An, D (An Dong); Wu, WJ (Wu Wen-jin); Xia, W (Xia Wei); Zhai, YF (Zhai Ya-feng) |
| Title: A New Discrimination Method of Maize Seed Varieties Based on Near-Infrared Spectroscopy |
| Source: SPECTROSCOPY AND SPECTRAL ANALYSIS, 30 (9): 2372-2376 SEP 2010 |
| Abstract: A new discrimination method for the maize seed varieties based on the near-infrared spectroscopy was proposed. The reflectance spectra of maize seeds were obtained by a FT-NIR spectrometer (12 000-4 000 cm(-1)). The original spectra data were preprocessed by first derivative method. Then the principal component analysis (PCA) was used to compress the spectra data. The principal components with the cumulate reliabilities more than 80% were used to build the discrimination models. The model was established by Psi-3 neuron based on biomimetic pattern recognition (BPR). Especially, the parameter of the covering index was proposed to assist to discriminating the variety of a seed sample. The authors tested the discrimination capability of the model through four groups of experiments. There were 10, 18, 26 and 34 varieties training the discrimination models in these experiments, respectively. Additionally, another seven maize varieties and nine wheat varieties were used to test the capability of the models to reject the varieties not participating in training the models. Each group of the experiment was repeated three times by selecting different training samples at random. The correct classification rates of the models in the four-group experiments were above 91. 8%. The correct rejection rates for the varieties not participating in training the models all attained above 95%. Furthermore, the performance of the discrimination models did not change obviously when using the different training samples. The results showed that this discrimination method can not only effectively recognize the maize seed varieties, but also reject the varieties not participating in training the model. It may be practical in the discrimination of maize seed varieties. |
| ISSN: 1000-0593 |
| DOI: 10.3964/j.issn.1000-0593(2010)09-2372-05 |
| Record 14 of 16 |
| Author(s): Wang, XW (Wang Xin-Wei); Zhou, Y (Zhou Yan); Fan, ST (Fan Song-Tao); He, J (He Jun); Liu, YL (Liu Yu-Liang) |
| Title: Range-Gated Laser Stroboscopic Imaging for Night Remote Surveillance |
| Source: CHINESE PHYSICS LETTERS, 27 (9): Art. No. 094203 SEP 2010 |
| Abstract: For night remote surveillance, we present a method, the range-gated laser stroboscopic imaging(RGLSI), which uses a new kind of time delay integration mode to integrate target signals so that night remote surveillance can be realized by a low-energy illuminated laser. The time delay integration in this method has no influence on the video frame rate. Compared with the traditional range-gated laser imaging, RGLSI can reduce scintillation and target speckle effects and significantly improve the image signal-to-noise ratio analyzed. Even under low light level and low visibility conditions, the RGLSI system can effectively work. In a preliminary experiment, we have detected and recognized a railway bridge one kilometer away under a visibility of six kilometers, when the effective illuminated energy is 29.5 mu J. |
| ISSN: 0256-307X |
| Article Number: 094203 |
| DOI: 10.1088/0256-307X/27/9/094203 |
| Record 15 of 16 |
| Author(s): Xiao, X (Xiao Xi); Zhu, Y (Zhu Yu); Xu, HH (Xu Hai-Hua); Zhou, LA (Zhou Liang); Hu, YT (Hu Ying-Tao); Li, ZY (Li Zhi-Yong); Li, YT (Li Yun-Tao); Yu, YD (Yu Yu-De); Yu, JZ (Yu Jin-Zhong) |
| Title: Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers |
| Source: CHINESE PHYSICS LETTERS, 27 (9): Art. No. 094207 SEP 2010 |
| Abstract: A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efficient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 60nm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements. |
| ISSN: 0256-307X |
| Article Number: 094207 |
| DOI: 10.1088/0256-307X/27/9/094207 |
| Record 16 of 16 |
| Author(s): Wang, ZJ (Wang, Zhijie); Qu, SC (Qu, Shengchun); Zeng, XB (Zeng, Xiangbo); Liu, JP (Liu, Junpeng); Tan, FR (Tan, Furui); Jin, L (Jin, Lan); Wang, ZG (Wang, Zhanguo) |
| Title: Influence of interface modification on the performance of polymer/Bi2S3 nanorods bulk heterojunction solar cells |
| Source: APPLIED SURFACE SCIENCE, 257 (2): 423-428 NOV 1 2010 |
| Abstract: In this paper, bulk heterojunction photovoltaic devices based on the poly[2-methoxy-5-(3',7'-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV):Bi2S3 nanorods hybrid material were present. To optimize the performance of the devices, the interface modification of the hybrid material that has a significant impact on the exciton dissociation efficiency was studied. An improvement in the device performance was achieved by modifying the Bi2S3 surface with a thin dye layer. Moreover, modifying the Bi2S3 surface with anthracene-9-carboxylic acid can enhance the performance further. Compared with the solar cells with Bi2S3 nanorods hybrid with the MDMO-PPV as the active layer, the anthracene-9carboxylic acid modified devices are better in performance, with the power conversion efficiency higher by about one order in magnitude. (C) 2010 Elsevier B.V. All rights reserved. |
| ISSN: 0169-4332 |
| DOI: 10.1016/j.apsusc.2010.07.004 |
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