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| Record 1 of 15 |
| Author(s): Wang, HR (Wang Hui-rong); Chen, XL (Chen Xin-liang); Li, WJ (Li Wei-jun); Lai, JL (Lai Jiang-liang) |
| Title: Feature Analysis and Discrimination of Varieties of Corn Based on Near Infrared Spectra |
| Source: SPECTROSCOPY AND SPECTRAL ANALYSIS, 30 (12): 3213-3216 DEC 2010 |
| Abstract: A new method for the discrimination of varieties of corn was proposed based on the data set of near-infrared spectroscopy range from 4 000 to 12 000 cm(-1) of corn seed varieties. Principal component analysis (PCA) method was used to study the feature of the data, and the authors found that the near-infrared spectroscopy of corn seed varieties has a clear feature of zonal distribution, so the correlativity between the change in the distribution of the principal component and the discrimination result was studied, according to which the normalized principal component analysis (NPCA) method was proposed. Besides, principal direction biomimetic pattern recognition (PBPR) was proposed according to the feature, which got a better discrimination result. The average correct recognition rate attained 97.67% for test set I, and the average correct rejection rate attained 98.40%, with 13 of the 30 varieties reaching the correct recognition rate of 100%; The average correct rejection rate attained 98.90% for the test set II, and 11 of the 30 varieties reached the correct rejection rate of 100%. It was proved that the method had a high correct discrimination rate. |
| ISSN: 1000-0593 |
| DOI: 10.3964/j.issn.1000-0593(2010)12-3213-04 |
| Record 2 of 15 |
| Author(s): Liu, GH (Liu, Genhua); Chen, YH (Chen, Yonghai); Jia, CH (Jia, Caihong); Hao, GD (Hao, Guo-Dong); Wang, ZG (Wang, Zhanguo) |
| Title: Spin splitting modulated by uniaxial stress in InAs nanowires |
| Source: JOURNAL OF PHYSICS-CONDENSED MATTER, 23 (1): Art. No. 015801 JAN 12 2011 |
| Abstract: We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands. |
| ISSN: 0953-8984 |
| Article Number: 015801 |
| DOI: 10.1088/0953-8984/23/1/015801 |
| Record 3 of 15 |
| Author(s): Meng, XQ (Meng, X. Q.); Jin, P (Jin, P.); Liang, ZM (Liang, Z. M.); Liu, FQ (Liu, F. Q.); Wang, ZG (Wang, Z. G.); Zhang, ZY (Zhang, Z. Y.) |
| Title: Structure and properties of InAs/AlAs quantum dots for broadband emission |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (10): Art. No. 103515 NOV 15 2010 |
| Abstract: The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy technique. The properties of materials and optics of such QD structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (PL) techniques. It is discovered that the inhomogeneous strain filed mainly exists below InAs QDs layers in the case of no wetting layer. The full width at half maximums (FWHMs) and intensities of PL emission peaks of InAs QDs are found to be closely related to the thickness of the thin AlAs layers. The InAs QDs on an eight monolayer AlAs layer, with wide FWHMs and large integral intensity of PL emission peaks, are favorable for producing broadband QD superluminescent diodes, external-cavity QD laser with large tuning range. (C) 2010 American Institute of Physics. [doi:10.1063/1.3512912] |
| ISSN: 0021-8979 |
| Article Number: 103515 |
| DOI: 10.1063/1.3512912 |
| Record 4 of 15 |
| Author(s): Ying, J (Ying, J.); Zhang, XW (Zhang, X. W.); Fan, YM (Fan, Y. M.); Tan, HR (Tan, H. R.); Yin, ZG (Yin, Z. G.) |
| Title: Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films |
| Source: DIAMOND AND RELATED MATERIALS, 19 (11): 1371-1376 NOV 2010 |
| Abstract: We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples. (C) 2010 Elsevier B.V. All rights reserved. |
| ISSN: 0925-9635 |
| DOI: 10.1016/j.diamond.2010.08.004 |
| Record 5 of 15 |
| Author(s): Hao, GD (Hao Guo-Dong); Chen, YH (Chen Yong-Hai); Fan, YM (Fan Ya-Ming); Huang, XH (Huang Xiao-Hui); Wang, HB (Wang Huai-Bing) |
| Title: Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films |
| Source: CHINESE PHYSICS B, 19 (11): Art. No. 117104 NOV 2010 |
| Abstract: We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode |
| ISSN: 1674-1056 |
| Article Number: 117104 |
| Record 6 of 15 |
| Author(s): Hu, XL (Hu Xiao-Long); Zhang, JY (Zhang Jiang-Yong); Shang, JZ (Shang Jing-Zhi); Liu, WJ (Liu Wen-Jie); Zhang, BP (Zhang Bao-Ping) |
| Title: The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses |
| Source: CHINESE PHYSICS B, 19 (11): Art. No. 117801 NOV 2010 |
| Abstract: This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer |
| ISSN: 1674-1056 |
| Article Number: 117801 |
| Record 7 of 15 |
| Author(s): Hao, RT (Hao, Ruiting); Deng, SK (Deng, Shukang); Shen, LX (Shen, Lanxian); Yang, PZ (Yang, Peizhi); Tu, JL (Tu, Jielei); Liao, H (Liao, Hua); Xu, YQ (Xu, Yingqiang); Niu, ZC (Niu, Zhichuan) |
| Title: Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers |
| Source: THIN SOLID FILMS, 519 (1): 228-230 OCT 29 2010 |
| Abstract: GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved. (C) 2010 Elsevier B.V. All rights reserved. |
| ISSN: 0040-6090 |
| DOI: 10.1016/j.tsf.2010.08.001 |
| Record 8 of 15 |
| Author(s): Jiang, YC (Jiang, Y. C.); Liu, FQ (Liu, F. Q.); Wang, LJ (Wang, L. J.); Yin, W (Yin, W.); Wang, ZG (Wang, Z. G.) |
| Title: Blue-shift photoluminescence from porous InAlAs |
| Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25 (11): Art. No. 115006 NOV 2010 |
| Abstract: A porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data. |
| ISSN: 0268-1242 |
| Article Number: 115006 |
| DOI: 10.1088/0268-1242/25/11/115006 |
| Record 9 of 15 |
| Author(s): Cai, LK (Cai, Likang); Zhang, J (Zhang, Jing); Bai, WL (Bai, Wenli); Wang, Q (Wang, Qing); Wei, X (Wei, Xin); Song, GF (Song, Guofeng) |
| Title: Spatial Mode Selection by the Phase Modulation of Subwavelength Plasmonic Grating |
| Source: PLASMONICS, 5 (4): 423-428 DEC 2010 |
| Abstract: The extraordinary transmission of the subwavelength gold grating has been investigated by the rigorous coupled-wave analysis and verified by the metal-insulator-metal plasmonic waveguide method. The physical mechanisms of the extraordinary transmission are characterized as the excitation of the surface plasmon polariton modes. The subwavelength grating integrated with the distributed Bragg reflector is proposed to modulate the phase to realize spatial mode selection, which is prospected to be applied for transverse mode selection in the vertical cavity surface-emitting laser. |
| ISSN: 1557-1955 |
| DOI: 10.1007/s11468-010-9160-9 |
| Record 10 of 15 |
| Author(s): Deng, HX (Deng, Hui-Xiong); Li, JB (Li, Jingbo); Li, SS (Li, Shu-Shen); Peng, HW (Peng, Haowei); Xia, JB (Xia, Jian-Bai); Wang, LW (Wang, Lin-Wang); Wei, SH (Wei, Su-Huai) |
| Title: Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs |
| Source: PHYSICAL REVIEW B, 82 (19): Art. No. 193204 NOV 17 2010 |
| Abstract: For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture. |
| ISSN: 1098-0121 |
| Article Number: 193204 |
| DOI: 10.1103/PhysRevB.82.193204 |
| Record 11 of 15 |
| Author(s): Lv, XQ (Lv, X. Q.); Jin, P (Jin, P.); Wang, ZG (Wang, Z. G.) |
| Title: Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region |
| Source: IEEE PHOTONICS TECHNOLOGY LETTERS, 22 (24): 1799-1801 DEC 15 2010 |
| Abstract: A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current. |
| ISSN: 1041-1135 |
| DOI: 10.1109/LPT.2010.2086052 |
| Record 12 of 15 |
| Author(s): Wang, L (Wang, Li); Zhao, XF (Zhao, Xiaofan); Lou, CY (Lou, Caiyun); Lu, D (Lu, Dan); Sun, Y (Sun, Yu); Zhao, LJ (Zhao, Lingjuan); Wang, W (Wang, Wei) |
| Title: 40 Gbits/s all-optical clock recovery for degraded signals using an amplified feedback laser |
| Source: APPLIED OPTICS, 49 (34): 6577-6581 DEC 1 2010 |
| Abstract: All-optical clock recovery for the return-to-zero modulation format is demonstrated experimentally at 40 Gbits/s by using an amplified feedback laser. A 40 GHz optical clock with a root-mean-square (rms) timing jitter of 130 fs and a carrier-to-noise ratio of 42 dB is obtained. Also, a 40 GHz optical clock with timing jitter of 137 fs is directly recovered from pseudo-non-return-to-zero signals degraded by polarization-mode dispersion (PMD). No preprocessing stage to enhance the clock tone is used. The rms timing jitter of the recovered clock is investigated for different values of input power and for varying amounts of waveform distortion due to PMD. (C) 2010 Optical Society of America |
| ISSN: 0003-6935 |
| Record 13 of 15 |
| Author(s): Zhang, J (Zhang Jun); Tan, PH (Tan Ping-Heng); Zhao, WJ (Zhao Wei-Jie) |
| Title: Accurate determination of electronic transition energy of carbon nanotubes from the resonant behavior of radial breathing modes and their overtones |
| Source: ACTA PHYSICA SINICA, 59 (11): 7966-7973 NOV 2010 |
| Abstract: The resonant Raman behavior of the radial breathing modes are very useful to analyze the electronic property of carbon nanotubes. We investigated the resonant behaviors of Stokes and anti-Stokes radial breathing mode and its overtone of a metallic nanotube, and show how to accurately determine the electronic transition energy of carbon nanotubes from radial breathing modes and their overtones. Based on the present results, the previously reported resonant Raman behavior of the radial breathing modes of SWINT bundles can be interpreted very well. |
| ISSN: 1000-3290 |
| Record 14 of 15 |
| Author(s): Liu, WB (Liu Wen-Bao); Zhao, DG (Zhao De-Gang); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu Zong-Shun); Zhu, JJ (Zhu Jian-Jun); Zhang, SM (Zhang Shu-Ming); Yang, H (Yang Hui) |
| Title: Abnormal photoabsorption in high resistance GaN epilayer |
| Source: ACTA PHYSICA SINICA, 59 (11): 8048-8051 NOV 2010 |
| Abstract: Unintentionally doped GaN epilayers are grown by the metalorganic chemical vapor deposition (MOCVD). Photovoltaic (PV) spectroscopy shows that there appears an abnormal photoabsorption in some undoped GaN films with high resistance. The peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of GaN. This phenomenon may be related to exciton absorption. Then metal-semiconductor-metal (MSM) Schottky photodetectors are fabricated on these high resistance epilayers. The photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. When the excitation light irradiates around the reverse biased Schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. Furthermore, when the excitation light irradiates the reverse biased Schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased Schottky junction. The shift value is about 28 meV, and it is found to be insensitive to temperature. According to the analyses of the distribution of the electric field within the MSM device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed. |
| ISSN: 1000-3290 |
| Record 15 of 15 |
| Author(s): Chen, YX (Chen Yi-Xin); Zheng, WH (Zheng Wan-Hua); Chen, W (Chen Wei); Chen, LH (Chen Liang-Hui); Tang, YD (Tang Yi-Dan); Shen, GD (Shen Guang-Di) |
| Title: AlGaInP LED with surface structure of two-dimensional photonic crystal |
| Source: ACTA PHYSICA SINICA, 59 (11): 8083-8087 NOV 2010 |
| Abstract: Some progress in the research of GaN based LED with photonic crystal structure has been made recently. Based on the photonic crystal's photonic band gap effect and photon grating diffraction principle, the extraction efficiency of LED with photonic crystal can be improved. In this paper, the restriction on AlGaInP LED's extraction efficiency is analyzed, and the photonic crystal is introduced in to the AlGaInP LED to improve the extraction efficiency. The theoretical analyses and the experiment results show that the output luminous intensity of LED with photonic crystal is improved by 16%, which results from some effect of the GaN based LED with photonic crystal. |
| ISSN: 1000-3290 |
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