排序 |
作品题名 |
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1 |
CMOS硅发光二极管驱动电路 |
34 |
2 |
二维光子晶体理论研究和激光器的设计 |
13 |
3 |
半导体科学与技术 |
10 |
4 |
波长8 μm 分布反馈量子级联激光器的研究 |
9 |
5 |
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate |
8 |
|
半导体的检测与分析 |
8 |
7 |
宽禁带半导体纳米结构中缺陷和掺杂特性研究 |
7 |
|
可调谐光纤F-P腔滤波器 |
7 |
|
Effect of electron-electron scattering on spin dephasing in a high-mobility low-density two-dimensional electron gas |
7 |
|
光子晶体分布反馈量子级联激光器的研究 |
7 |
11 |
长波长(1.3-1.55μm)自组织InGaAs/GaAs量子点的分子束外延生长 |
6 |
|
高Al组分AlGaN薄膜的MOCVD生长和特性研究 |
6 |
|
短腔长与锥形量子级联激光器研究 |
6 |
|
减薄抛光用的精密磨抛头机械装置 |
6 |
|
碳材料的拉曼光谱 |
6 |
|
InN 薄膜与纳米结构的生长及其物性研究 |
6 |
17 |
磷化铟单晶片的抛光工艺 |
5 |
|
Electrically Driven InAs Quantum-Dot Single-Photon Sources |
5 |
|
MOCVD设备研制及氮化物材料生长研究 |
5 |
|
InP基1.55μm波长高性能波导探测器研制 |
5 |
|
一种生长氧化锌薄膜的装置及方法 |
5 |
|
基于仿生模式识别的手掌特征识别研究 |
5 |
|
大功率激光二极管泵浦技术的研究 |
5 |
|
GaN基LED发光效率提高方法研究 |
5 |
|
低温晶片键合的方法 |
5 |
26 |
仿生模式识别在掌形识别中的应用研究 |
4 |
|
具有外加磁场的深能级瞬态谱测量装置与测量方法 |
4 |
|
用于照明的LED平面光源结构 |
4 |
|
周期性波导结构半导体光电探测器及制作方法 |
4 |
|
氮化镓基蓝光激光器的制作方法 |
4 |
|
生长氮化铟单晶薄膜的方法 |
4 |
|
Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles |
4 |
|
脉冲参量下转换纠缠双光子的横向光学效应研究及超快简并pump-probe探测InAs/GaAs量子点理论分析 |
4 |
|
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) |
4 |
|
Magnetic barrier on strained graphene: A possible valley filter |
4 |
|
大功率量子阱激光器设计及直接调制特性研究 |
4 |
|
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate |
4 |
|
InAs量子点单光子发射器件研究 |
4 |
|
磁致伸缩式光纤光栅电流传感器 |
4 |
|
新型多段式自脉动DFB 激光器的研制 |
4 |
|
AlN 晶体的离子注入掺杂及缺陷研究 |
4 |
|
III-V半导体低维结构材料分子束外延生长及其性质的研究 |
4 |
|
基于横向外延生长的GaN LED 特性研究 |
4 |
|
InGaN 太阳能电池理论模拟及制备研究 |
4 |
|
The research of range-gated laser night vision system on cars - art. no. 68351V |
4 |
|
Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: First-principles calculations |
4 |
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1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE |
4 |
|
数模IC测试系统关键部件的研究 |
4 |
|
键合强度可调节的柔性衬底 |
4 |
|
Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy |
4 |
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Comparison of modal gain and material gain for strong guiding slab waveguides |
4 |
|
采用TEOS源PECVD生长氧化硅厚膜的方法 |
4 |
|
高Al组分AlxGa1-xN材料生长及MSM型阳盲紫外探测器的研究 |
4 |
|
Novel compact SOI-based reconfigurable optical add/drop multiplexer using microring resonators - art. no. 60190L |
4 |
|
Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles |
4 |
|
制备低温超薄异质外延用柔性衬底的方法 |
4 |
|
Small signal equivalent circuit model of vertical cavity surface emitting lasers |
4 |
|
Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation |
4 |
|
半导体光电探测器阵列新型器件及其应用研究 |
4 |
|
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN |
4 |
|
Silicon: the promising material for phontonic integrated circuits platform |
4 |
|
High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD |
4 |
|
Optical properties of boron-doped Si nanowires |
4 |
|
用于半导体器件中的取样光栅的制作方法 |
4 |
|
Photoluminescence from Ge clusters embedded in porous silicon |
4 |
|
In(Ga)N/GaN异质外延纳米结构的生长以及表征 |
4 |
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Temperature-independent FBG pressure sensor with high sensitivity |
4 |
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Distributed feedback terahertz quantum cascade lasers with complex-coupled metallic gratings |
4 |
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Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate |
4 |
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氮化物LED 材料生长及垂直结构器件制备技术研究 |
4 |
|
高性能铟砷/镓砷量子点材料有源区的外延生长方法 |
4 |
|
Anomalous optical and electronic properties of dense sodium |
4 |
|
电子束光刻技术研究 |
4 |
74 |
Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation |
3 |
|
Spin current diode based on an electron waveguide with spin-orbit interaction |
3 |
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取样光栅分布布拉格反射半导体激光器的制作方法 |
3 |
|
ANOMALOUS ION CHANNELING EFFECTS IN INGAAS/GAAS STRAINED HETEROJUNCTIONS |
3 |
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Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure |
3 |
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铝镓氮/氮化镓高电子迁移率晶体管的制作方法 |
3 |
|
Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides |
3 |
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用于氮化物外延生长的纳米级图形衬底的制作方法 |
3 |
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Electron tunneling through double magnetic barriers on the surface of a topological insulator |
3 |
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A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes |
3 |
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长波长砷化铟/砷化镓量子点材料 |
3 |
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Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates |
3 |
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Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure |
3 |
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Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si |
3 |
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TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy |
3 |
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Study on optical properties of Er/Er+O doped GaN thin films |
3 |
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高速并行光收发模块及甚短距离光传输系统研究 |
3 |
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Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser |
3 |
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半导体激光器蝶形封装器件 |
3 |
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带有锥形增益区的脊型波导高功率半导体激光器结构 |
3 |
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Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks |
3 |
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多功能半导体晶片键合装置 |
3 |
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Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application |
3 |
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PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI |
3 |
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The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells |
3 |
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Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE |
3 |
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Storage of photoexcited electron-hole pairs in an AlAs/GaAs heterostructure created by electron transfer in real and kappa spaces |
3 |
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A new way of uniform splitting of the optical power by directional coupling between the photonic crystal waveguides |
3 |
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Temperature dependence of the Fermi level in low-temperature-grown GaAs |
3 |
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DEEP IMPURITY LEVELS IN SILICON UNDER HYDROSTATIC-PRESSURE |
3 |
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用于氮化物外延生长的图形蓝宝石衬底的制作方法 |
3 |
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InGaAsP-InP Square Microlasers With a Vertex Output Waveguide |
3 |
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Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001) |
3 |
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Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers |
3 |
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High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre |
3 |
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A novel DC-DC charge pump circuit for passive RFID transponder |
3 |
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EFFECT OF VALENCE-BAND HYBRIDIZATION ON THE EXCITON SPECTRA IN GAAS-GA1-XALXAS QUANTUM-WELLS |
3 |
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Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation |
3 |
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Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K |
3 |
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Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser |
3 |
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Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition |
3 |
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A study of strong photoluminescence of SiOx : H films |
3 |
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高温高压气体容器的轴的动态密封装置 |
3 |
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基于神经网络的集成电路芯片生产过程建模与优化 |
3 |
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Compact four-channel reconfigurable optical add-drop multiplexer using silicon photonic wire (vol 282, pg 3477, 2009) |
3 |
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GaN的MOVPE横向外延生长及其结构特性研究 |
3 |
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Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate |
3 |
|
Low Power Integrated Circuits for Wireless Neural Recording Applications |
3 |
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Absorption spectra of Se-8-ring clusters in zeolite 5A |
3 |
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Analysis of the interfaces of [NiFe/Mo](30) and [Fe/Mo](30) multilayers |
3 |
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光通道性能在线监测模块 |
3 |
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Si 基1.55 微米RCE 探测器的材料生长与器件制作 |
3 |
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Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS |
3 |
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Raman scattering from In1-x-yGaxAlyAs quaternary alloys |
3 |
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Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy |
3 |
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Hybrid waveguide-plasmon resonances in gold pillar arrays on top of a dielectric waveguide |
3 |
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有机染料敏化非晶硅材料及其太阳电池的研究 |
3 |
|
Integrated multimode interference couplers in silicon-on insulator |
3 |
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HIGH-RATE ION ETCHING OF GAAS AND SI AT LOW ION ENERGY BY USING AN ELECTRON-BEAM EXCITED PLASMA SYSTEM |
3 |
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Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates |
3 |
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The design of cascaded resistors in a new analog switch two-step ADC architecture |
3 |
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SI(331)-6X2 SURFACE PHASE AND OXYGEN-CHEMISORPTION |
3 |
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Dielectric relaxation of poled polymer DCNP/PMMA |
3 |
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SUBBANDS AND OPTICAL-TRANSITIONS OF SUPERLATTICES IN AN ELECTRIC-FIELD |
3 |
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High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
3 |
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Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
3 |
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Dislocation scattering in AlxGa1-xN/GaN heterostructures |
3 |
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Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures |
3 |
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CMOS电路与MEMS微电极的单片集成化方法 |
3 |
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Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy |
3 |
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具有自动调节功能的光学衰减器模块 |
3 |
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Ultrafast geometric manipulation of electron spin and detection of the geometric phase via Faraday rotation spectroscopy |
3 |
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OPTICAL PHONON MODES IN QUANTUM WIRES |
3 |
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采用红外半导体激光光源的汽车辅助夜视系统 |
3 |
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提高n型硅原位掺杂载流子浓度的方法 |
3 |
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All-optical clock recovery using a ridge width varied two-section partly gain-coupled DFB self-pulsation laser |
3 |
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取样光栅分布布拉格反射可调谐激光器 |
3 |
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A new half-flash architecture for high speed video ADC |
3 |
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精密多线切割和研磨用切磨粉体材料 |
3 |
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FUNDAMENTAL MAGNETOTRANSPORT PROPERTIES OF A GAAS-ALGAAS MODULATION-DOPED HETEROSTRUCTURE |
3 |
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The scattering matrix method for quantum waveguides |
3 |
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First-Principles Study of Magnetic Properties of 3d Transition Metals Doped in ZnO Nanowires |
3 |
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Nonlinear Rashba model and spin relaxation in quantum wells |
3 |
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High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm |
3 |
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Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers |
3 |
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GaAs 基1.3-1.55μm GaInNAs(Sb)量子阱及激光器、探测器的分子束外延生长 |
3 |
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大功率基横模光子晶体垂直腔面发射激光器的研究 |
3 |
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LED照明的LCD背光源结构 |
3 |
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一种谐振腔增强探测器腔模的控制方法 |
3 |
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具有倾斜波导结构的半导体光放大器封装用的热沉 |
3 |
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硅基可协变衬底上生长三族氮化物的方法 |
3 |
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Nano-layer structure of silicon-on-insulator materials |
3 |
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波长可调谐分布布拉格反射半导体激光器的制作方法 |
3 |
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A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth |
3 |
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硅基二氧化硅材料及阵列波导光栅器件研究 |
3 |
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Controllable growth of semiconductor nanometer structures |
3 |
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Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide |
3 |
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HEMT材料结构设计与MBE生长 |
3 |
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砷化镓/砷化铝分布布拉格反射镜的湿法腐蚀方法 |
3 |
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GaN 基异质结中的极化效应及Si 衬底GaN 生长研究 |
3 |
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几种低维半导体结构的能带及光跃迁 |
3 |
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Numerical simulation of nc-Si : H/c-Si heterojunction solar cells |
3 |
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Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence |
3 |
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Enhancement of quality factor for TE whispering-gallery modes in microcylinder resonators |
3 |
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Spin split cyclotron resonance in GaAs quantum wells |
3 |
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Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells |
3 |
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半导体微腔激光器和光学双稳态的研究 |
3 |
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一种硅基并联MOS电容结构高速电光调制器及制作方法 |
3 |
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声子调控间接带隙半导体材料横向电注入发光器件 |
3 |
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HFET的模拟及微波功率HFET的设计与研制 |
3 |
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二维光泵浦/电注入GaAs 基光子晶体微腔的研究 |
3 |
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Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires |
3 |
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Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate |
3 |
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PHOTON ENERGY-DEPENDENCE OF SW EFFECT IN A-SI-H FILMS |
3 |
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高晶体质量氮化物外延生长所用图形衬底的制备方法 |
3 |
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Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE |
3 |
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Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure |
3 |
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Longitudinal spin transport in diluted magnetic semiconductor superlattices: The effect of the giant Zeeman splitting |
3 |
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大功率半导体激光器光纤耦合模块关键工艺技术研究 |
3 |
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Electron and hole transport through quantum dots |
3 |
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Effects of lattice vibration on the effective mass of quasi-two-dimensional strong-coupling polaron |
3 |
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基于标准CMOS工艺的积分电容及其制作方法 |
3 |
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Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber |
3 |
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Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy |
3 |
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An adaptive controller for a class of nonlinear system using direction basis function |
3 |
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Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC |
3 |
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Pump-Suppressed Nondegenerate Four-Wave Mixing in a Highly Nonlinear Photonic Crystal Fiber Sagnac Loop |
3 |
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GaN 基HEMT 材料及器件研究 |
3 |
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DEFORMATION POTENTIALS AT THE TOP OF VALENCE BANDS IN SEMICONDUCTORS - ABINITIO PSEUDOPOTENTIAL CALCULATIONS |
3 |
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砷化铟和砷化镓的纳米结构及其制作方法 |
3 |
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半导体材料磁性和光学性质的第一性原理研究 |
3 |
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高纯氧化锌的化学气相沉积装置及其制备方法 |
3 |
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Optical spectra of CdSe nanocrystals under hydrostatic pressure |
3 |
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集成电路的保护结构 |
3 |
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高温退火非掺杂磷化铟制备半绝缘衬底的方法 |
3 |
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First principle study of Mg, Si and Mn co-doped GaN |
3 |
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一种照明用氮化镓基发光二极管器件 |
3 |
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高频大功率GaN基HEMT结构材料及器件研究 |
3 |
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Space grown semi-insulating gallium arsenide single crystal and its application |
3 |
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Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth |
3 |
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Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer |
3 |
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半导体光学放大器的研制和窄条宽选区-MOVPE技术的开发 |
3 |
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Investigation of mode radiation loss for microdisk resonators with pedestals by FDTD technique |
3 |
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Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy |
3 |
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太赫兹量子级联半导体激光器材料及其生长方法 |
3 |
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Mode theory and analysis of planar array waveguides |
3 |
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Electro-optical properties and temporal stability of the guest-host DCNP/PEK-c polymer thin film |
3 |
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氮化镓基材料的生长、性质研究及其DHLED的制备 |
3 |
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偏振可控光电子器件的制备方法 |
3 |
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A Single-Fundamental-Mode Photonic Crystal Vertical Cavity Surface Emitting Laser |
3 |
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Rashba electron transport in one-dimensional quantum waveguides |
3 |
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AlGaN/GaN HEMT材料及微波功率器件研究 |
3 |
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Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers |
3 |
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通过注氧进行量子限制的硅基单电子晶体管及制作方法 |
3 |
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叠层LD光纤光导椎泵浦光纤激光器的制作方法 |
3 |
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利用固定相移来测量同频信号相位差的方法及电路 |
3 |
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Analysis and numerical simulation of eigenmode characteristics for semiconductor lasers with an equilateral triangle micro-resonator |
3 |
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Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing |
3 |
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Quantum transport from the perspective of quantum open systems |
3 |
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气态束源炉瞬态开关控制真空装置 |
3 |
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砷化镓/氧化铝型可调谐滤波器及制作方法 |
3 |
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A widely tunable continuous-time LPF for a direct conversion DBS Tuner |
3 |
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Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy |
3 |
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Coulomb blockade double-dot Aharonov-Bohm interferometer: Giant fluctuations |
3 |
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One-dimensional quantum waveguide theory of Rashba electrons |
3 |
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Magnetoexciton polaritons in planar semiconductor microcavities |
3 |
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Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
3 |
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Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers |
3 |