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6月21日--7月1日全所SCI论文已提交至SEMI openIR [2011-07-07] |
| 以下论文的全文已提交至半导体所机构知识库，欢迎浏览和下载 Record 1 of 14 Author(s): Zhang, JM (Zhang, Junmeng); Qu, SC (Qu, Shengchun); Zhang, LS (Zhang, Lisheng); Tang, AW (Tang, Aiwei); Wang, ZG (Wang, Zhanguo) Title: Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate Source: SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 79 (3): 625-630 AUG 2011 Abstract: A sandwich structured substrate was designed for quantitative molecular detection using surface enhanced Raman scattering (SERS), in which the probe molecule was sandwiched between silver nanoparticles (SNPs) and silver nanoarrays. The SNPs was prepared using Lee-Meisel method, and the silver nanoarrays was fabricated on porous anodic aluminum oxide (AAO) using electrodepositing method. The SERS studies show that the sandwich structured substrate exhibits good stability and reproducibility, and the detection sensitivity of Rhodamine 6G (R6G) and Melamine can respectively reach up to 10(-19) M and 10(-9) M, which is improved greatly as compared to other SERS substrates. The improved SERS sensitivity is closely associated with the stronger electromagnetic field enhancement, which stems from localized surface plasmon (LSP) coupling between the two silver nanostructures. Furthermore, the SERS intensity increased almost linearly as the mother concentration increased, which indicates that such a sandwich structure may be used as a good SERS substrate for quantitative analysis. (C) 2011 Elsevier B.V. All rights reserved. ISSN: 1386-1425 DOI: 10.1016/j.saa.2011.03.045 -------------------------------------------------------------------------------- Record 2 of 14 Author(s): Zhang, J (Zhang, Jing); Cai, LK (Cai, Likang); Bai, WL (Bai, Wenli); Xu, Y (Xu, Yun); Song, GF (Song, Guofeng) Title: Hybrid plasmonic waveguide with gain medium for lossless propagation with nanoscale confinement Source: OPTICS LETTERS, 36 (12): 2312-2314 JUN 15 2011 Abstract: In this Letter, we propose a hybrid plasmonic nanosystem consisting of a silver cladding layer with a semicylinder bump on top of InGaAsP nanowire. Because of the coupling between the dielectric waveguide mode and surface plasmon polariton mode, the hybrid plasmonic mode can exhibit low loss with strong field localization. The finite element method numerical simulations are employed to evaluate the performances of the hybrid mode. In order to achieve the lossless propagation of the hybrid mode with the mode area of 0.0058(lambda(2)/4) at 1.55 mu m, the material gain of 200 nm x 300 nm InGaAsP nanowire should reach 1223 cm(-1). (c) 2011 Optical Society of America ISSN: 0146-9592 -------------------------------------------------------------------------------- Record 3 of 14 Author(s): Li, C (Li, Chong); Wang, F (Wang, Fei); Sun, Q (Sun, Q.); Jia, Y (Jia, Yu) Title: Surface alloy formation of noble adatoms adsorbed on Si(111)-root 3 x root 3-Pb surface: a first-principles study Source: JOURNAL OF PHYSICS-CONDENSED MATTER, 23 (26): Art. No. 265001 JUL 6 2011 Abstract: The geometric structures, stability and electronic properties of initial stages of surface alloy formation for noble atoms adsorbed on Si(111)-root 3 x root 3-Pb surfaces have been comparatively and extensively studied by using first-principles calculations within density functional theory. Our results revealed that an Au trimer rather than a tetramer adsorption induces a surface alloy by combining with Pb atoms in covalent bonds, exhibiting semiconducting characteristics due to the localization of surface states. The stability of the two-dimensional (2D) surface alloy obeys the Hume-Rothery rule. The electronic structures of the 2D surface alloy are sensitive to the number of Au adatoms and can be modulated by the quantity of Au adatoms. Unlike the Au atoms, our further calculations indicated that adsorption of Ag or Cu atoms on the surface cannot form a surface alloy with Pb atoms in the surface layer due to a weaker interaction or smaller radius. ISSN: 0953-8984 Article Number: 265001 DOI: 10.1088/0953-8984/23/26/265001 -------------------------------------------------------------------------------- Record 4 of 14 Author(s): Deng, QW (Deng, Qingwen); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Wang, CM (Wang, Cuimei); Yin, HB (Yin, Haibo); Chen, H (Chen, Hong); Hou, QF (Hou, Qifeng); Lin, DF (Lin, Defeng); Li, JM (Li, Jinmin); Wang, ZG (Wang, Zhanguo); Hou, X (Hou, Xun) Title: An investigation on InxGa1-xN/GaN multiple quantum well solar cells Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 44 (26): Art. No. 265103 JUL 6 2011 Abstract: The conversion efficiency of InxGa1-xN/GaN multiple quantum well solar cells is originally investigated in theory based on the ideal diode model and the ideal unity quantum well model. The results reveal that the conversion efficiency partially depends on the width of the quantum well and the thickness of the barrier region but is dominated by the number of quantum wells and indium content of InxGa1-xN. The calculated results are found to be basically trustworthy by comparing with reported experimental results. An In0.15Ga0.85N/GaN multiple quantum well solar cell is successfully fabricated with a conversion efficiency of 0.2%. The main discrepancy between calculated and experimental results is the material quality and manufacturing technology which need to be improved. ISSN: 0022-3727 Article Number: 265103 DOI: 10.1088/0022-3727/44/26/265103 -------------------------------------------------------------------------------- Record 5 of 14 Author(s): Wang, ZG (Wang, Zhiguo); Xue, SW (Xue, Shuwen); Li, JB (Li, Jingbo); Gao, F (Gao, Fei) Title: First principles study of p-type doping in SiC nanowires: role of quantum effect Source: JOURNAL OF NANOPARTICLE RESEARCH, 13 (7): 2887-2892 JUL 2011 Abstract: Using first principles density functional theory calculations, we investigated the X and X-N-X (X = Al and Ga) doped 3C-SiC nanowires grown along the <111> crystal direction with diameter of 1.00 and 1.33 nm. We found that the ionization energy of acceptor state is much larger in nanowires than that in the bulk SiC as a result of quantum confinement effect. Simulation results show that the reduced dimensionality in p-type SiC nanowires strongly reduces the capability of the materials to generate free carriers. It is also found that X-N-X (X = Al and Ga) complexes are energetically favored to form in the materials and have lower ionization energy than single doping. It is confirm that codoping is more suitable method for achieving low-resistivity semiconductors either in nano materials or bulk material. ISSN: 1388-0764 DOI: 10.1007/s11051-010-0177-y -------------------------------------------------------------------------------- Record 6 of 14 Author(s): Wu, J (Wu Jian); Lu, XQ (Lue Xue-Qin); Jin, P (Jin Peng); Meng, XQ (Meng Xian-Quan); Wang, ZG (Wang Zhan-Guo) Title: Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device Source: CHINESE PHYSICS B, 20 (6): Art. No. 064202 JUN 2011 Abstract: A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current. ISSN: 1009-1963 Article Number: 064202 DOI: 10.1088/1674-1056/20/6/064202 -------------------------------------------------------------------------------- Record 7 of 14 Author(s): Wang, YB (Wang Yong-Bin); Xu, Y (Xu Yun); Zhang, Y (Zhang Yu); Yu, X (Yu Xiu); Song, GF (Song Guo-Feng); Chen, LH (Chen Liang-Hui) Title: Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors Source: CHINESE PHYSICS B, 20 (6): Art. No. 067302 JUN 2011 Abstract: This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 x 10(15) cm(-3) in the active region is believed to have the best overall performances. ISSN: 1009-1963 Article Number: 067302 DOI: 10.1088/1674-1056/20/6/067302 -------------------------------------------------------------------------------- Record 8 of 14 Author(s): Wang, W (Wang Wei); Su, SJ (Su Shao-Jian); Zheng, J (Zheng Jun); Zhang, GZ (Zhang Guang-Ze); Zuo, YH (Zuo Yu-Hua); Cheng, BW (Cheng Bu-Wen); Wang, QM (Wang Qi-Ming) Title: Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates Source: CHINESE PHYSICS B, 20 (6): Art. No. 068103 JUN 2011 Abstract: Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100)subs trate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100)substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a chi(min) value of 6.7% measured by channeling and random Rutherford backscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100)substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150 degrees C-300 degrees C, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystallin equality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface,which are parallel to the interface plane and should not degrade electrical properties and device performance. ISSN: 1009-1963 Article Number: 068103 DOI: 10.1088/1674-1056/20/6/068103 -------------------------------------------------------------------------------- Record 9 of 14 Author(s): Guo, WH (Guo, Wanhong); Liu, JQ (Liu, Junqi); Chen, JY (Chen, Jianyan); Li, L (Li, Lu); Wang, LJ (Wang, Lijun); Liu, FQ (Liu, Fengqi); Wang, ZG (Wang, Zhanguo) Title: Single-mode surface-emitting distributed feedback quantum-cascade lasers based on hybrid waveguide structure Source: CHINESE OPTICS LETTERS, 9 (6): Art. No. 061404 JUN 10 2011 Abstract: Surface-emitting distributed feedback quantum-cascade lasers operating at lambda approximate to 7.8 mu m are demonstrated. The metal-covered second-order grating is shallow-etched into the surface of a thin InGaAs contact and cladding layer. This forms a hybrid waveguide and used to achieve relatively low waveguide losses and high coupling strengths. The devices exhibit stable single-mode operation from 90 to 130 K with a side mode suppression ratio above 20 dB. A slope efficiency of 194 mW/A is obtained at 90 K, which is twice higher than that of the Fabry-Perot counterpart. ISSN: 1671-7694 Article Number: 061404 DOI: 10.3788/COL201109.061404 -------------------------------------------------------------------------------- Record 10 of 14 Author(s): Pan, X (Pan, Xu); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Wang, CM (Wang, Cuimei); Yang, CB (Yang, Cuibai); Li, W (Li, Wei); Wang, WY (Wang, Weiying); Jin, P (Jin, Peng); Wang, ZG (Wang, Zhanguo) Title: Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy Source: APPLIED SURFACE SCIENCE, 257 (20): 8718-8721 AUG 1 2011 Abstract: Al0.91Ga0.09N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al0.91Ga0.09N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 meV) in Al0.91Ga0.09N. The formation of these localized states provides a favorable condition for efficient light emission. (C) 2011 Elsevier B.V. All rights reserved. ISSN: 0169-4332 DOI: 10.1016/j.apsusc.2011.05.055 -------------------------------------------------------------------------------- Record 11 of 14 Author(s): Jiang, CY (Jiang, Chongyun); Chen, YH (Chen, Yonghai); Ma, H (Ma, Hui); Yu, JL (Yu, Jinling); Liu, Y (Liu, Yu) Title: Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system Source: APPLIED PHYSICS LETTERS, 98 (23): Art. No. 232116 JUN 6 2011 Abstract: In this letter we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the C-2v symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi-two-dimensional structure with the QWR layer deposition thickness. (c) 2011 American Institute of Physics. ISSN: 0003-6951 Article Number: 232116 DOI: 10.1063/1.3596467 -------------------------------------------------------------------------------- Record 12 of 14 Author(s): Jiang, LJ (Jiang, L. J.); Wang, XL (Wang, X. L.); Xiao, HL (Xiao, H. L.); Wang, ZG (Wang, Z. G.); Yang, CB (Yang, C. B.); Zhang, ML (Zhang, M. L.) Title: Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions Source: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 104 (1): 429-432 JUL 2011 Abstract: GaN films grown by MOCVD were implanted by Sm ions under different implantation and annealing conditions, in order to optimize the implantation parameters. The structural and magnetic measurements indicated a reduction of defect concentration and an increase of saturation magnetization when samples were implanted at 400A degrees C, most probably due to the increased substitutional fraction of Sm ions. While the subsequent annealing process further decreased the damage in GaN lattice, but reduced the saturation magnetization on the contrary, caused by the decomposition of the surface layer and the formation of Sm-defect complexes during high-temperature annealing. ISSN: 0947-8396 DOI: 10.1007/s00339-011-6243-1 -------------------------------------------------------------------------------- Record 13 of 14 Author(s): Wu, Y (Wu, Y.); Zhou, SY (Zhou, S. Y.); Wang, XY (Wang, X. Y.); Cao, LX (Cao, L. X.); Zhang, XQ (Zhang, X. Q.); Luo, S (Luo, S.); He, YS (He, Y. S.); Barannik, AA (Barannik, A. A.); Cherpak, NT (Cherpak, N. T.); Skresanov, VN (Skresanov, V. N.) Title: Microwave Study of FeSe0.3Te0.7 Thin Film by TE011-Mode Sapphire Dielectric Resonator Source: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 21 (3): 599-601 Part 1 JUN 2011 Abstract: High quality epitaxial thin films of FeSe1-xTex (x = 0-1) have been successfully fabricated. Their superconducting transition temperatures are around 8-13 K. Microwave properties of a film (x = 0.7) was studied by a sapphire dielectric cavity at 9.315 GHz. The cavity, which has a quality factor of 45000 in room temperature with TE011-mode, is specially designed for the measurement of small samples with the sapphire cylinder having a small hole in the center. Thin film samples with dimension of 1-2 mm can be put in the middle of the hole, supported by a very thin sapphire rod. The cavity is sealed in a vacuum chamber soaked in the liquid He-4 and the temperature of the thin sapphire rod (hence the sample) can be controlled from 1.6 K to 60 K with a stability about +/-1 mK. Temperature dependence of transmission response and Q-factors were measured by a network analyser (Agilent N5230C). The results showed a clear signature of multi-gap superconductivity. No evidences of existence of node in the energy gap were found as the normalized change in the surface reactance and the corresponding normalized change in the in-plane penetration depth have flat dependence at low temperatures. ISSN: 1051-8223 DOI: 10.1109/TASC.2010.2096174 -------------------------------------------------------------------------------- Record 14 of 14 Author(s): Huang, J (Huang, J.); Xu, K (Xu, K.); Gong, XJ (Gong, X. J.); Wang, JF (Wang, J. F.); Fan, YM (Fan, Y. M.); Liu, JQ (Liu, J. Q.); Zeng, XH (Zeng, X. H.); Ren, GQ (Ren, G. Q.); Zhou, TF (Zhou, T. F.); Yang, H (Yang, H.) Title: Dislocation cross-slip in GaN single crystals under nanoindentation Source: APPLIED PHYSICS LETTERS, 98 (22): Art. No. 221906 MAY 30 2011 Abstract: The dislocation multiplication and movement mechanism in GaN single crystals has been studied using nanoindentation and cathodoluminescence. Dislocation loops can multiply and move from plane to plane by cross-slip, thus producing a wide plastic deformation in GaN during indentation. This mechanism is further supported by the remarkable movement of indentation induced dislocations during annealing. Furthermore, the so-called pop-in events, in which the indenter suddenly enters deeper into the material without the application of any additional force, can be better understood by considering the cross-slip mechanism. (C) 2011 American Institute of Physics. ISSN: 0003-6951 Article Number: 221906 DOI: 10.1063/1.3593381 |
