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| Record 1 of 17 |
| Author(s): Huang, TM (Huang TianMao); Chen, NF (Chen NuoFu); Zhang, XW (Zhang XingWang); Bai, YM (Bai YiMing); Yin, ZG (Yin ZhiGang); Shi, HW (Shi HuiWei); Zhang, H (Zhang Han); Wang, Y (Wang Yu); Wang, YS (Wang YanShuo); Yang, XL (Yang XiaoLi) |
| Title: Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis |
| Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 53 (11): 3002-3005 NOV 2010 |
| Abstract: A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing. |
| ISSN: 1674-7321 |
| DOI: 10.1007/s11431-010-4104-3 |
| Record 2 of 17 |
| Author(s): Wang, ZG (Wang, Zhiguo); Li, JB (Li, Jingbo) |
| Title: First principles study of N-N split interstitial in GaN nanowires |
| Source: PHYSICS LETTERS A, 374 (44): 4543-4547 OCT 4 2010 |
| Abstract: Atomic and electronic properties of N-N split interstitial in GaN nanowires have been investigated using first principles calculations. The formation energy calculations show that the N-N interstitial favors substituting an N atom at the surface of the nanowires. The interstitial induces localized states in the band gap of GaN nanowires. (C) 2010 Elsevier B.V. All rights reserved. |
| ISSN: 0375-9601 |
| DOI: 10.1016/j.physleta.2010.09.009 |
| Record 3 of 17 |
| Author(s): Zhang, J (Zhang, Jing); Cai, LK (Cai, Likang); Bai, WL (Bai, Wenli); Song, GF (Song, Guofeng) |
| Title: Hybrid waveguide-plasmon resonances in gold pillar arrays on top of a dielectric waveguide |
| Source: OPTICS LETTERS, 35 (20): 3408-3410 OCT 15 2010 |
| Abstract: We propose a hybrid waveguide-plasmon system consisting of gold pillar arrays on top of a dielectric waveguide. The formation of extraordinary transmissions induced by the hybrid waveguide-plasmon resonances is investigated by rigorous coupled-wave analysis. The characteristics of the hybrid resonances can be predicted by introducing the photonic crystal slab theory. Extremely narrow absorption peaks and the electromagnetically induced transparency-like optical property are demonstrated in our hybrid system. (C) 2010 Optical Society of America |
| ISSN: 0146-9592 |
| Record 4 of 17 |
| Author(s): Zhang, J (Zhang, Jing); Cai, LK (Cai, Likang); Bai, WL (Bai, Wenli); Song, GF (Song, Guofeng) |
| Title: Flat Surface Plasmon Polariton Bands in Bragg Grating Waveguide for Slow Light |
| Source: JOURNAL OF LIGHTWAVE TECHNOLOGY, 28 (14): 2030-2036 JUL 15 2010 |
| Abstract: The formations of the surface plasmon polariton (SPP) bands in metal/air/metal (MAM) sub-wavelength plasmonic grating waveguide (PGW) are proposed. The band gaps originating from the highly localized resonances inside the grooves can be simply estimated from the round trip phase condition. Due to the overlap of the localized SPPs between the neighboring grooves, a Bloch mode forms in the bandgap and can be engineered to build a very flat dispersion for slow light. A chirped PGW with groove depth varying is also demonstrated to trap light, which is validated by finite-difference time-domain (FDTD) simulations with both continuous and pulse excitations. |
| ISSN: 0733-8724 |
| DOI: 10.1109/JLT.2010.2051320 |
| Record 5 of 17 |
| Author(s): Sun, Y (Sun, Yu); Pan, JAQ (Pan, Jiao Qing); Zhao, LJA (Zhao, Ling Juan); Chen, WX (Chen, Weixi); Wang, W (Wang, Wei); Wang, L (Wang, Li); Zhao, XAF (Zhao, Xiao Fan); Lou, CY (Lou, Cai Yun) |
| Title: All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser |
| Source: JOURNAL OF LIGHTWAVE TECHNOLOGY, 28 (17): 2521-2525 SEP 1 2010 |
| Abstract: We report all optical clock recovery based on a monolithic integrated four-section amplified feedback semiconductor laser (AFL), with the different sections integrated based on the quantum well intermixing (QWI) technique. The beat frequency of an AFL is continuously tunable in the range of 19.8-26.3 GHz with an extinction ratio above 8 dB, and the 3-dB linewidth is close to 3 MHz. All-optical clock recovery for 20 Gb/s was demonstrated experimentally using the AFL, with a time jitter of 123.9 fs. Degraded signal clock recovery was also successfully demonstrated using both the dispersion and polarization mode dispersion (PMD) degraded signals separately. |
| ISSN: 0733-8724 |
| DOI: 10.1109/JLT.2010.2055539 |
| Record 6 of 17 |
| Author(s): Ding, Y (Ding, Y.); Fan, WJ (Fan, W. J.); Ma, BS (Ma, B. S.); Xu, DW (Xu, D. W.); Yoon, SF (Yoon, S. F.); Liang, S (Liang, S.); Zhao, LJ (Zhao, L. J.); Wasiak, M (Wasiak, M.); Czyszanowski, T (Czyszanowski, T.); Nakwaski, W (Nakwaski, W.) |
| Title: Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (7): Art. No. 073111 OCT 1 2010 |
| Abstract: Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490236] |
| ISSN: 0021-8979 |
| Article Number: 073111 |
| DOI: 10.1063/1.3490236 |
| Record 7 of 17 |
| Author(s): Liang, S (Liang, S.); Zhu, HL (Zhu, H. L.); Kong, DH (Kong, D. H.); Wang, W (Wang, W.) |
| Title: Formation trends of ordered self-assembled nanoislands on stepped substrates |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (7): Art. No. 073512 OCT 1 2010 |
| Abstract: The growth of ordered self-assembled nanoislands on stepped substrates is studied systematically by kinetic Monte Carlo simulations. As the terrace width is small, the formation of nanoislands is confined in the steps and nanoislands ordered in lines or nanowires can be obtained. The Schwoebel barrier at the step edges has a great influence on the evolution of both the size and space distributions of the islands. When the terrace width is relatively large, self-ordering of nanoislands in the center regions of the terraces happens. An unexpected trend of the nanoisland self-ordering is found as the deposition thickness is larger than 0.2 ML, which can be related to the attractive migrations between nearby islands. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490184] |
| ISSN: 0021-8979 |
| Article Number: 073512 |
| DOI: 10.1063/1.3490184 |
| Record 8 of 17 |
| Author(s): Wang, Y (Wang, Y.); Jiang, Y (Jiang, Y.); Zhang, XW (Zhang, X. W.); Yin, ZG (Yin, Z. G.) |
| Title: In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (7): Art. No. 073703 OCT 1 2010 |
| Abstract: Based upon a hybrid ferromagnet/semiconductor structure consisting of two-dimensional electron gas and a pair of surface ferromagnetic stripes on top, we have theoretically investigated the effect of in-plane stray field omitted frequently in previous studies on the spin-dependent ballistic transport properties in hybrid structure. It is demonstrated here that, in combination with an external-controllable electrostatic modulation, the concerned structure shows a similar function as a lateral spin-polarized resonant tunneling device, where the strong spin-filtering effect occurs and nearly single-mode polarization is anticipated for the proper modulation. More importantly, the spin polarity of transmission electron can be easily transferred from one extreme to the other by switching the magnetization of stripes, showing the promising application as an efficient spin aligner in the developing semiconductor spintronics. (c) 2010 American Institute of Physics. [doi:10.1063/1.3490780] |
| ISSN: 0021-8979 |
| Article Number: 073703 |
| DOI: 10.1063/1.3490780 |
| Record 9 of 17 |
| Author(s): Zhu, JH (Zhu, Jihong); Wang, LJ (Wang, Liangji); Zhang, SM (Zhang, Shuming); Wang, H (Wang, Hui); Zhao, DG (Zhao, Degang); Zhu, JJ (Zhu, Jianjun); Liu, ZS (Liu, Zongshun); Jiang, DS (Jiang, Desheng); Yang, H (Yang, Hui) |
| Title: The fabrication of GaN-based nanopillar light-emitting diodes |
| Source: JOURNAL OF APPLIED PHYSICS, 108 (7): Art. No. 074302 OCT 1 2010 |
| Abstract: InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488905] |
| ISSN: 0021-8979 |
| Article Number: 074302 |
| DOI: 10.1063/1.3488905 |
| Record 10 of 17 |
| Author(s): Wei, TB (Wei, Tongbo); Wang, JX (Wang, Junxi); Liu, NX (Liu, Naixin); Lu, HX (Lu, Hongxi); Zeng, YP (Zeng, Yiping); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin) |
| Title: Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers |
| Source: JAPANESE JOURNAL OF APPLIED PHYSICS, 49 (10): Art. No. 100201 2010 |
| Abstract: The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaN epilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal. (C) 2010 The Japan Society of Applied Physics |
| ISSN: 0021-4922 |
| Article Number: 100201 |
| DOI: 10.1143/JJAP.49.100201 |
| Record 11 of 17 |
| Author(s): Li, YQ (Li, Yueqiang); Wang, XD (Wang, Xiaodong); Xu, XN (Xu, Xiaona); Liu, W (Liu, Wen); Chen, YL (Chen, Yanling); Yang, FH (Yang, Fuhua); Tan, PH (Tan, Pingheng); Zeng, YP (Zeng, Yiping) |
| Title: Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots |
| Source: JAPANESE JOURNAL OF APPLIED PHYSICS, 49 (10): Art. No. 104002 2010 |
| Abstract: N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) is observed in a GaAs-based modulation-doped field effect transistor (MODFET) with InAs quantum dots (QDs) in the barrier layer (QDFET) compared with a GaAs MODFET. The NDR is explained as the real-space transfer (RST) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the PVR is enhanced dramatically upon inserting the QD layer. It is also revealed that the QD layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. The NDR suggests a promising application in memory or high-speed logic devices for the QDFET structure. (C) 2010 The Japan Society of Applied Physics |
| ISSN: 0021-4922 |
| Article Number: 104002 |
| DOI: 10.1143/JJAP.49.104002 |
| Record 12 of 17 |
| Author(s): Wang, SJ (Wang, Shi-Jiang); Lin, JD (Lin, Jian-Dong); Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Che, KJ (Che, Kai-Jun); Xiao, JL (Xiao, Jin-Long); Du, Y (Du, Yun); Fan, ZC (Fan, Zhong-Chao) |
| Title: AlGaInAs-InP Microcylinder Lasers Connected With an Output Waveguide |
| Source: IEEE PHOTONICS TECHNOLOGY LETTERS, 22 (18): 1349-1351 SEP 15 2010 |
| Abstract: AlGaInAs-InP microcylinder lasers connected with an output waveguide are fabricated by planar technology. Room-temperature continuous-wave operation with a threshold current of 8 mA is realized for a microcylinder laser with the radius of 10 mu m and the output waveguide width of 2 mu m. The mode Q-factor of 1.2 x 10(4) is measured from the laser spectrum at the threshold. Coupled mode characteristics are analyzed by 2-D finite-difference time-domain simulation and the analytical solution of whispering-gallery modes. The calculated mode Q-factors of coupled modes are in the same order as the measured value. |
| ISSN: 1041-1135 |
| DOI: 10.1109/LPT.2010.2056361 |
| Record 13 of 17 |
| Author(s): Che, KJ (Che, Kai-Jun); Lin, JD (Lin, Jian-Dong); Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Xiao, JL (Xiao, Jin-Long); Du, Y (Du, Yun) |
| Title: InGaAsP-InP Square Microlasers With a Vertex Output Waveguide |
| Source: IEEE PHOTONICS TECHNOLOGY LETTERS, 22 (18): 1370-1372 SEP 15 2010 |
| Abstract: InGaAsP-InP square microlasers with a vertex output waveguide are fabricated by planar processes, and the etched sidewalls of the lasers are confined by insulating layer SiO2 and p-electrode TiAu metals. For a square microlaser with a side length of 30 mu m and a 2-mu m-wide output waveguide, a continuous-wave threshold current is 26 mA at room temperature and output power is 0.72 mW at 86 mA. The mode interval of 21 and 7.4 nm is observed for the microlasers with the side length of 10 and 30 mu m, respectively. Finite-difference time-domain (FDTD) simulations indicate that the lasing modes have incident angles of about 45 degrees at the boundaries of the resonator. In addition, square resonators surrounded by air, SiO2-Ti-Au, and SiO2-Au are compared by FDTD simulations. |
| ISSN: 1041-1135 |
| DOI: 10.1109/LPT.2010.2057417 |
| Record 14 of 17 |
| Author(s): Yang, ZC (Yang, Z. C.); Huang, AP (Huang, A. P.); Zheng, XH (Zheng, X. H.); Xiao, ZS (Xiao, Z. S.); Liu, XY (Liu, X. Y.); Zhang, XW (Zhang, X. W.); Chu, PK (Chu, Paul K.); Wang, WW (Wang, W. W.) |
| Title: Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate |
| Source: IEEE ELECTRON DEVICE LETTERS, 31 (10): 1101-1103 OCT 2010 |
| Abstract: The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal. |
| ISSN: 0741-3106 |
| DOI: 10.1109/LED.2010.2062171 |
| Record 15 of 17 |
| Author(s): Song, HP (Song, Huaping); Guo, Y (Guo, Yan); Yang, A (Yang, Anli); Wei, HY (Wei, Hongyuan); Xu, XQ (Xu, Xiaoqing); Liu, JM (Liu, Jianming); Yang, SY (Yang, Shaoyan); Liu, XL (Liu, Xianglin); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo) |
| Title: The role of zinc dopant and the temperature effect on the controlled growth of InN nanorods in metal-organic chemical vapor deposition system |
| Source: CRYSTENGCOMM, 12 (11): 3936-3941 2010 |
| Abstract: Vertically well-aligned InN nanorods have been synthesized successfully by introducing diethylzinc (DEZn) into metal-organic chemical vapor deposition system. X-Ray diffraction and transmission electron microscopy measurements show that InN nanorods are single-crystalline and Zn-doped. In-depth studies indicate that DEZn inhibits the InN growth along m-plane and further leads to the self-formation indium droplets acting as catalyst. The whole growth process of InN nanorods is a combined result of the restriction effect from DEZn and catalytic effect from indium droplets. Also, the temperature effect on the growth has been studied intensively. Our research on the controlled growth of high-quality InN nanorods is very important for InN-based optoelectronic and electronic nano-devices. |
| ISSN: 1466-8033 |
| DOI: 10.1039/c0ce00046a |
| Record 16 of 17 |
| Author(s): Zheng, XH (Zheng, X. H.); Huang, AP (Huang, A. P.); Xiao, ZS (Xiao, Z. S.); Yang, ZC (Yang, Z. C.); Wang, M (Wang, M.); Zhang, XW (Zhang, X. W.); Wang, WW (Wang, W. W.); Chu, PK (Chu, Paul K.) |
| Title: Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks |
| Source: APPLIED PHYSICS LETTERS, 97 (13): Art. No. 132908 SEP 27 2010 |
| Abstract: The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491292] |
| ISSN: 0003-6951 |
| Article Number: 132908 |
| DOI: 10.1063/1.3491292 |
| Record 17 of 17 |
| Author(s): Peng, YS (Peng Yin-Sheng); Ye, XL (Ye Xiao-Ling); Xu, B (Xu Bo); Niu, JB (Niu Jie-Bin); Jia, R (Jia Rui); Wang, ZG (Wang Zhan-Guo); Liang, S (Liang Song); Yang, XH (Yang Xiao-Hong) |
| Title: Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities |
| Source: ACTA PHYSICA SINICA, 59 (10): 7073-7077 OCT 2010 |
| Abstract: This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition, the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode. |
| ISSN: 1000-3290 |
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