| Record 1 of 5 |
| Author(s): Li, YC (Li, Yan-Chao); Li, SS (Li, Shu-Shen) |
| Title: Quantum critical phenomena in the XY spin chain with the Dzyaloshinski-Moriya interaction |
| Source: PHYSICAL REVIEW A, 79 (3): Art. No. 032338 Part A MAR 2009 |
| Abstract: We study the effects of the Dzyaloshinski-Moriya (DM) anisotropic interaction on the ground-state properties of the Heisenberg XY spin chain by means of the fidelity susceptibility, order parameter, and entanglement entropy. Our results show that the DM interaction could influence the distribution of the regions of quantum phase transitions and cause different critical regions in the XY spin model. Meanwhile, the DM interaction has effective influence on the degree of entanglement of the system and could be used to increase the entanglement of the spin system. |
| ISSN: 1050-2947 |
| Article Number: 032338 |
| DOI: 10.1103/PhysRevA.79.032338 |
| Record 2 of 5 |
| Author(s): Wang, HL (Wang, Hailing); Xing, MX (Xing, Mingxin); Ren, G (Ren, Gang); Zheng, WH (Zheng, Wanhua) |
| Title: Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals |
| Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27 (3): 1093-1096 MAY 2009 |
| Abstract: The authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in InP. The etching was performed at 70 degrees C using BCl3/Cl-2 chemistries. A high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. The process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. Surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments. |
| ISSN: 1071-1023 |
| DOI: 10.1116/1.3125268 |
| Record 3 of 5 |
| Author(s): Yang, YD (Yang, Yue-De); Huang, YZ (Huang, Yong-Zhen); Che, KJ (Che, Kai-Jun); Wang, SJ (Wang, Shi-Jiang); Hu, YH (Hu, Yong-Hong); Du, Y (Du, Yun) |
| Title: Equilateral-Triangle and Square Resonator Semiconductor Microlasers |
| Source: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 15 (3): 879-884 MAY-JUN 2009 |
| Abstract: The characteristics of equilateral-triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mu m-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mu m and the square resonator microlasers with the side length of 20 mu m. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Perot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively. |
| ISSN: 1077-260X |
| DOI: 10.1109/JSTQE.2008.2010236 |
| Record 4 of 5 |
| Author(s): Li, AK (Li, Aikui); Wang, ZM (Wang, Zemin); Liu, JJ (Liu, Jiajun); Zeng, XY (Zeng, Xiaoyan); Wang, CX (Wang, Chunxia); Chen, HD (Chen, Hongda) |
| Title: Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing |
| Source: CHINESE OPTICS LETTERS, 6 (2): 108-111 FEB 10 2008 |
| Abstract: SiO2-TiO2 sol-gel films are deposited on SiO2/Si by dip-coating technique. The SiO2-TiO2 strips are fabricated by laser direct writing using all ytterbium fiber laser and followed by chemical etching. Surface structures, morphologies and roughness of the films and strips are characterized. The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in Structure and a shrinkage concave groove forms if the film is irradiated by laser beam. The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time. But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time. After being etched for 28 s, the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm. |
| ISSN: 1671-7694 |
| Record 5 of 5 |
| Author(s): Song, HP (Song, H. P.); Yang, AL (Yang, A. L.); Wei, HY (Wei, H. Y.); Guo, Y (Guo, Y.); Zhang, B (Zhang, B.); Zheng, GL (Zheng, G. L.); Yang, SY (Yang, S. Y.); Liu, XL (Liu, X. L.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.); Yang, TY (Yang, T. Y.); Wang, HH (Wang, H. H.) |
| Title: Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy |
| Source: APPLIED PHYSICS LETTERS, 94 (22): Art. No. 222114 JUN 1 2009 |
| Abstract: In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47 +/- 0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49-0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices. |
| ISSN: 0003-6951 |
| Article Number: 222114 |
| DOI: 10.1063/1.3151956 |
图书信息中心
2009-7-5
|
